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Thermionic Emission Capability of the Ba-Sc-Al-O Compound Synthesized by High-Temperature Solid-State Process
IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1294-1298
2023
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Experimental Validation on the Industrial Panel-Level Process for Producing Solid-State EGFET Sensor Chips
IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.1-6
2022
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Epitaxial Graphene Transistors on SiC Substrates
IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2078-2085
2008
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Nanocomposite Material Characterization of a Solid-State Fractional Capacitor
IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1136-1142
2020
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A Low-Noise High-Dynamic-Range 17-b 1.3-Megapixel 30-fps CMOS Image Sensor With Column-Parallel Two-Stage Folding-Integration/Cyclic ADC
IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3396-3400
2012
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High-frequency solid-state electronic devices
I.E.E.E. transactions on electron devices, 2005-05, Vol.52 (5), p.638-649
2005
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Characterization of SOS-CMOS FETs at Low Temperatures for the Design of Integrated Circuits for Quantum Bit Control and Readout
IEEE transactions on electron devices, 2010-02, Vol.57 (2), p.539-547
2010
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Electronic Properties and Orientation-Dependent Performance of InAs Nanowire Transistors
IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.2880-2885
2010
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Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM-Part II: Modeling
IEEE transactions on electron devices, 2012-09, Vol.59 (9), p.2468-2475
2012
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Wide-Bandgap Solid-State Circuit Breakers for DC Power Systems: Device and Circuit Considerations
IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.294-300
2015
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High-Mobility Ge p- and n-MOSFETs With 0.7-nm EOT Using HfO2/Al2O3/GeOx/Ge Gate Stacks Fabricated by Plasma Postoxidation
IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.927-934
2013
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Considerations for Ultimate CMOS Scaling
IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1813-1828
2012
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Doping-Less Tunnel Field Effect Transistor: Design and Investigation
IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3285-3290
2013
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Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs
IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3327-3333
2012
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Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors
IEEE transactions on electron devices, 2011-09, Vol.58 (9), p.3042-3047
2011
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Integrated Batteryless Electron Timer
IEEE transactions on electron devices, 2011-03, Vol.58 (3), p.792-797
2011
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Monolayer MoS2 Transistors Beyond the Technology Road Map
IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3250-3254
2012
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From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of HfO2-Based FeFET Devices
IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4199-4205
2013
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The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps
IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3652-3666
2011
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A Comparative Study of Different Physics-Based NBTI Models
IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.901-916
2013
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High-Mobility Ge pMOSFET With 1-nm EOT Al2O3/GeOx/Ge Gate Stack Fabricated by Plasma Post Oxidation
IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.335-341
2012
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Compact Modeling of Conducting-Bridge Random-Access Memory (CBRAM)
IEEE transactions on electron devices, 2011-05, Vol.58 (5), p.1352-1360
2011
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Direct and Indirect Band-to-Band Tunneling in Germanium-Based TFETs
IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.292-301
2012
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Endurance/Retention Trade-off on HfO2/Metal Cap 1T1R Bipolar RRAM
IEEE transactions on electron devices, 2013-03, Vol.60 (3), p.1114-1121
2013
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Hetero-Gate-Dielectric Tunneling Field-Effect Transistors
IEEE transactions on electron devices, 2010-09, Vol.57 (9), p.2317-2319
2010
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