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Guest Editorial Introduction to the Special Issue on Solid-State Image Sensors

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.2755-2756

Guidash, Michael

2022

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AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low RON × A

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.3050-3058

2010

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Multi-VT UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

IEEE transactions on electron devices, 2011, Vol.58 (8), p.2473-2482

2011

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A Tunnel FET for VDD Scaling Below 0.6 V With a CMOS-Comparable Performance

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.1855-1863

2011

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Synthesis of Silica-Coated Cs4PbBr6 and Cs4Pb(Br0.4I0.6)6 Quantum Dots With Long Lifetime and Enhancement in Quantum Efficiency for WLEDs Applications: Lightings With High CRI and Displays With Wide Color Gamut

IEEE transactions on electron devices, 2020-06, Vol.67 (6), p.2386-2392

2020

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IEEE_Xplore

Negative/Positive Electrocaloric Effect in Single-Layer Pb(ZrₓTi₁₋ₓ)O₃ Thin Films for Solid-State Cooling Device

IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1-7

2020

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IEEE_Xplore

Effect of O2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced Vth Shift of a-IGZO TFTs

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4159-4164

2013

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Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1554-1561

2004

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IEEE_Xplore

Industrially Feasible Rear Passivation and Contacting Scheme for High-Efficiency n-Type Solar Cells Yielding a VOC of 700 mV

IEEE transactions on electron devices, 2010-08, Vol.57 (8), p.2032-2036

2010

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A generalized reaction-diffusion model with explicit H-H2 dynamics for negative-bias temperature-instability (NBTI) degradation

IEEE transactions on electron devices, 2007-05, Vol.54 (5), p.1101-1107

2007

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Local Vth Variability and Scalability in Silicon-on-Thin-BOX (SOTB) CMOS With Small Random-Dopant Fluctuation

IEEE transactions on electron devices, 2010-04, Vol.57 (4), p.835-845

2010

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Engineering Nanowire n-MOSFETs at Lg < 8 nm

IEEE transactions on electron devices, 2013, Vol.60 (7), p.2171-2177

2013

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Fabrication of a 128 × 128 Pixels Charge Transfer Type Hydrogen Ion Image Sensor

IEEE transactions on electron devices, 2013, Vol.60 (8), p.2634-2639

2013

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Understanding LER-Induced MOSFET VT Variability-Part I: Three-Dimensional Simulation of Large Statistical Samples

IEEE transactions on electron devices, 2010-11, Vol.57 (11), p.2801-2807

2010

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Analysis of NMOS and PMOS Difference in VT Variation With Large-Scale DMA-TEG

IEEE transactions on electron devices, 2009, Vol.56 (9), p.2073-2080

2009

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High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio Links

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3592-3595

2013

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Pulsed Id―Vg Methodology and Its Application to Electron-Trapping Characterization and Defect Density Profiling

IEEE transactions on electron devices, 2009, Vol.56 (6), p.1322-1329

2009

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Sub-100-μA Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET

IEEE transactions on electron devices, 2008-05, Vol.55 (5), p.1185-1191

2008

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SOI TFET ION/IOFF Enhancement via Back Biasing

IEEE transactions on electron devices, 2011-10, Vol.58 (10), p.3283-3285

2011

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Metal nanocrystal memory with high-κ tunneling barrier for improved data retention

IEEE transactions on electron devices, 2005-04, Vol.52 (4), p.507-511

2005

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Logic suitability of 50-nm In0.7Ga0.3As HEMTs for beyond-CMOS applications

IEEE transactions on electron devices, 2007-10, Vol.54 (10), p.2606-2613

2007

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The Impact of Fringing Field on the Device Performance of a p-Channel Tunnel Field-Effect Transistor With a High- \kappa Gate Dielectric

IEEE transactions on electron devices, 2012-02, Vol.59 (2), p.277-282

2012

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InAlN/GaN HEMTs: a first insight into technological optimization

IEEE transactions on electron devices, 2006-03, Vol.53 (3), p.422-426

2006

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IEEE_Xplore

Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs : GaN ELECTRONIC DEVICES

IEEE transactions on electron devices, 2013, Vol.60 (10), p.3025-3031

2013

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Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

IEEE transactions on electron devices, 2013-05, Vol.60 (5), p.1640-1648

2013

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IEEE_Xplore

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KollektionSpringerLINK Contemporary (Konsortium Baden-Württemberg)

KollektioneBooks on EBSCOhost

Zeitschrift / SeriePhysica Status Solidi. B, Basic Solid State Physics

ThemaTechnology

Zeitschrift / SerieIeee Transactions On Electron Devices

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Guest Editorial Introduction to the Special Issue on Solid-State Image Sensors

AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low RON × A

Multi-VT UTBB FDSOI Device Architectures for Low-Power CMOS Circuit

A Tunnel FET for VDD Scaling Below 0.6 V With a CMOS-Comparable Performance

Synthesis of Silica-Coated Cs4PbBr6 and Cs4Pb(Br0.4I0.6)6 Quantum Dots With Long Lifetime and Enhancement in Quantum Efficiency for WLEDs Applications: Lightings With High CRI and Displays With Wide Color Gamut

Negative/Positive Electrocaloric Effect in Single-Layer Pb(ZrₓTi₁₋ₓ)O₃ Thin Films for Solid-State Cooling Device

Effect of O2 Flow Rate During Channel Layer Deposition on Negative Gate Bias Stress-Induced Vth Shift of a-IGZO TFTs

Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

Industrially Feasible Rear Passivation and Contacting Scheme for High-Efficiency n-Type Solar Cells Yielding a VOC of 700 mV

A generalized reaction-diffusion model with explicit H-H2 dynamics for negative-bias temperature-instability (NBTI) degradation

Local Vth Variability and Scalability in Silicon-on-Thin-BOX (SOTB) CMOS With Small Random-Dopant Fluctuation

Engineering Nanowire n-MOSFETs at Lg < 8 nm

Fabrication of a 128 × 128 Pixels Charge Transfer Type Hydrogen Ion Image Sensor

Understanding LER-Induced MOSFET VT Variability-Part I: Three-Dimensional Simulation of Large Statistical Samples

Analysis of NMOS and PMOS Difference in VT Variation With Large-Scale DMA-TEG

High-Efficiency 7 GHz Doherty GaN MMIC Power Amplifiers for Microwave Backhaul Radio Links

Pulsed Id―Vg Methodology and Its Application to Electron-Trapping Characterization and Defect Density Profiling

Sub-100-μA Reset Current of Nickel Oxide Resistive Memory Through Control of Filamentary Conductance by Current Limit of MOSFET

SOI TFET ION/IOFF Enhancement via Back Biasing

Metal nanocrystal memory with high-κ tunneling barrier for improved data retention

Logic suitability of 50-nm In0.7Ga0.3As HEMTs for beyond-CMOS applications

The Impact of Fringing Field on the Device Performance of a p-Channel Tunnel Field-Effect Transistor With a High- \kappa Gate Dielectric

InAlN/GaN HEMTs: a first insight into technological optimization

Sidewall Dominated Characteristics on Fin-Gate AlGaN/GaN MOS-Channel-HEMTs : GaN ELECTRONIC DEVICES

Sub-400 °C Si2H6 Passivation, HfO2 Gate Dielectric, and Single TaN Metal Gate: A Common Gate Stack Technology for In0.7Ga0.3As and Ge1-xSnx CMOS

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