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Accommodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001)

Journal of crystal growth, 1994-10, Vol.143 (3), p.115-123

1994

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Alternate method to produce quantum wires using dislocation slipping

Solid-state electronics, 1994-04, Vol.37 (4), p.567-569

1994

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Atomic scale saw by dislocation slipping: A new method to generate one-dimensional structure

Applied physics letters, 1992-05, Vol.60 (20), p.2481-2483

1992

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Charged defects at the interface between directly bonded silicon wafers

Japanese Journal of Applied Physics, 1997-09, Vol.36 (9A), p.5502-5506

1997

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Crystallization characteristics of the Mg-rich metallic glasses in the Ca–Mg–Zn system

Journal of alloys and compounds, 2013-03, Vol.552, p.88-97

2013

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D-term inflation, cosmic strings, and consistency with cosmic microwave background measurements

Physical review letters, 2005-01, Vol.94 (1), p.011303.1-011303.4, Article 011303

2005

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Deep etch X-ray lithography using silicon-gold masks fabricated by deep etch UV lithography and electroforming

Journal of micromechanics and microengineering, 1995-09, Vol.5 (3), p.203-208

1995

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Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation

Thin solid films, 1998-12, Vol.336 (1), p.277-280

1998

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The Effect of Controllable Optically-Induced Random Anisotropic Disorder On The Magnetotransport In A Two-Dimensional Electron System

Physics of Semiconductors; Part A, 2005, Vol.772, p.461-462

2005

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Elastic model for arrays of stacking fault tetrahedra produced under electron irradiation

Philosophical magazine (London, England : 1945), 1976-02, Vol.33 (2), p.293-303

1976

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Experimental study of the efficiency of storage in an RF ion trap

Rapid communications in mass spectrometry, 1995, Vol.9 (15), p.1580-1583

1995

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Extending high-finesse cavity techniques to the far-infrared

Review of scientific instruments, 2013-07, Vol.84 (7), p.075107-075107

2013

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and centres in KCl and KBr doped with either carbonates or sulphates

Journal of physics. Condensed matter, 1996-08, Vol.8 (33), p.6105-6112

1996

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Geometrical criteria required for the determination of the epitaxial stress from the transmission electron microscopy curvature method

Applied physics letters, 2005-05, Vol.86 (19), p.191901-191901-3

2005

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How generic is cosmic string formation in supersymmetric grand unified theories

Physical review. D, Particles and fields, 2003-11, Vol.68 (10), Article 103514

2003

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The K2ZrF6 wetting process : effect of surface chemistry on the ability of a SiC-fiber preform to be impregnated by aluminum

Metallurgical transactions. A, Physical metallurgy and materials science, 1991-09, Vol.22 (9), p.2133-2139

1991

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Kinetic energy of an N + ion cloud throughout the stability diagram

International journal of mass spectrometry, 1999, Vol.190, p.37-45

1999

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Microtwinning and growth defects in GaAs MBE layers

Journal of crystal growth, 1982-10, Vol.59 (3), p.531-538

1982

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Nucleation and growth of gallium arsenide on silicon

Applied surface science, 1992, Vol.56, p.589-596

1992

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Quantitative analysis of strain field in thin films from HRTEM micrographs

Thin solid films, 1998-04, Vol.319 (1), p.157-162

1998

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Relevance of the NEO dedicated observing programs

Comptes rendus. Physique, 2005-04, Vol.6 (3), p.327-335

2005

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Resonant Raman scattering in GaAsN: Mixing, localization, and impurity band formation of electronic states

Physical review. B, Condensed matter, 2003-05, Vol.67 (20), Article 205325

2003

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Role of the substrate imperfections on the island nucleation and defect formation: case of GaSb/GaAs(001)

Materials science & engineering. B, Solid-state materials for advanced technology, 2002, Vol.88 (2), p.181-185

2002

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Rotational and translational mobility of a highly plastic salt: Dimethylpyrrolidinium thiocyanate

Solid state ionics, 2008-02, Vol.178 (35), p.1798-1803

2008

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Structural and electrical investigations of silicon wafer bonding interfaces

Materials science & engineering. B, Solid-state materials for advanced technology, 1996-12, Vol.42 (1), p.164-167

1996

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Accommodation of lattice mismatch and threading of dislocations in GaSb films grown at different temperatures on GaAs (001)

Alternate method to produce quantum wires using dislocation slipping

Atomic scale saw by dislocation slipping: A new method to generate one-dimensional structure

Charged defects at the interface between directly bonded silicon wafers

Crystallization characteristics of the Mg-rich metallic glasses in the Ca–Mg–Zn system

D-term inflation, cosmic strings, and consistency with cosmic microwave background measurements

Deep etch X-ray lithography using silicon-gold masks fabricated by deep etch UV lithography and electroforming

Dislocation half loop formation in GaSb/(001)GaAs islands and steps role: a Monte Carlo simulation

The Effect of Controllable Optically-Induced Random Anisotropic Disorder On The Magnetotransport In A Two-Dimensional Electron System

Elastic model for arrays of stacking fault tetrahedra produced under electron irradiation

Experimental study of the efficiency of storage in an RF ion trap

Extending high-finesse cavity techniques to the far-infrared

and centres in KCl and KBr doped with either carbonates or sulphates

Geometrical criteria required for the determination of the epitaxial stress from the transmission electron microscopy curvature method

How generic is cosmic string formation in supersymmetric grand unified theories

The K2ZrF6 wetting process : effect of surface chemistry on the ability of a SiC-fiber preform to be impregnated by aluminum

Kinetic energy of an N + ion cloud throughout the stability diagram

Microtwinning and growth defects in GaAs MBE layers

Nucleation and growth of gallium arsenide on silicon

Quantitative analysis of strain field in thin films from HRTEM micrographs

Relevance of the NEO dedicated observing programs

Resonant Raman scattering in GaAsN: Mixing, localization, and impurity band formation of electronic states

Role of the substrate imperfections on the island nucleation and defect formation: case of GaSb/GaAs(001)

Rotational and translational mobility of a highly plastic salt: Dimethylpyrrolidinium thiocyanate

Structural and electrical investigations of silicon wafer bonding interfaces

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