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Real-time inspection and determination methods of faults on photovoltaic power systems by thermal imaging in Turkey

Renewable energy, 2020-03, Vol.147, p.1231-1238

2020

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Disruptive effect of Dzyaloshinskii-Moriya interaction on the magnetic memory cell performance

Applied physics letters, 2016-03, Vol.108 (11)

2016

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Tailoring interfacial effect in multilayers with Dzyaloshinskii-Moriya interaction by helium ion irradiation

Scientific reports, 2021-12, Vol.11 (1), p.23626-23626, Article 23626

2021

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Dzyaloshinskii-Moriya anisotropy in nanomagnets with in-plane magnetization

Physical review. B, 2016-01, Vol.93 (2), Article 020401

2016

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Spin pumping and inverse spin Hall effect in germanium

Physical review. B, Condensed matter and materials physics, 2013-08, Vol.88 (6), Article 064403

2013

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Manipulation of Magnetic Skyrmion Density in Continuous Ir/Co/Pt Multilayers

Micromachines (Basel), 2022-11, Vol.13 (11), p.1911

2022

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Controlling spin pumping into superconducting Nb by proximity-induced spin-triplet Cooper pairs

Communications physics, 2023-10, Vol.6 (1), p.287-8, Article 287

2023

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Ferromagnetic tunnel contacts to graphene: Contact resistance and spin signal

Journal of applied physics, 2015-02, Vol.117 (8)

2015

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Spin transport parameters of NbN thin films characterized by spin pumping experiments

Physical review materials, 2019-01, Vol.3 (1), Article 014406

2019

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Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

Physical review letters, 2012-09, Vol.109 (10), p.106603-106603, Article 106603

2012

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Effect of picosecond strain pulses on thin layers of the ferromagnetic semiconductor (Ga,Mn)(As,P)

Physical review. B, Condensed matter and materials physics, 2010-09, Vol.82 (10), Article 104422

2010

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Near-field magneto-caloritronic nanoscopy on ferromagnetic nanostructures

AIP advances, 2018-12, Vol.8 (12), p.125329-125329-6

2018

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Multifunctional ZnO:V thin films deposited by rf-magnetron sputtering from aerogel nanopowder target material

Thin solid films, 2011-06, Vol.519 (17), p.5787-5791

2011

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The influence of phosphorus content on magnetic anisotropy in ferromagnetic (Ga, Mn) (As, P)/GaAs thin films

Journal of physics. Condensed matter, 2013-08, Vol.25 (34), p.346001-10

2013

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Stochastic current-induced magnetization switching in a single semiconducting ferromagnetic layer

Physical review letters, 2014-01, Vol.112 (2), p.026601-026601, Article 026601

2014

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In-plane and out-of-plane spin precession in lateral spin-valves

Applied physics letters, 2013-04, Vol.102 (13)

2013

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Fast domain wall dynamics in MnAs/GaAs films

Applied physics letters, 2012-08, Vol.101 (7), p.72408

2012

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Ferromagnetism in Ga0.90Mn0.10As1―yPy: From the metallic to the impurity band conduction regime

Thin solid films, 2011-09, Vol.519 (23), p.8212-8214

2011

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Examination of performance of glassy carbon paste electrode modified with gold nanoparticle and xanthine oxidase for xanthine and hypoxanthine detection

Talanta (Oxford), 2007-12, Vol.74 (3), p.434-439

2007

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Corrigendum: The influence of phosphorus content on magnetic anisotropy in ferromagnetic (Ga, Mn)(As, P)/GaAs thin films

Journal of physics. Condensed matter, 2013-10, Vol.25 (42), p.429501

2013

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The influence of phosphorus content on magnetic anisotropy in ferromagnetic (Ga, Mn)(As, P)/GaAs thin films (vol 25, 346001, 2013)

Journal of physics. Condensed matter, 2013-10, Vol.25 (42)

2013

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Ferromagnetism in Ga0.90Mn0.10As1<ce:hsp sp="0.12"/>-<ce:hsp sp="0.12"/>yPy: From the metallic to the impurity band conduction regime

Thin solid films, 2011-09, Vol.519 (23), p.8212-8214

2011

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Temperature induced in-plane/out-of-plane magnetization transition in ferromagnetic Ga0.93Mn0.07As0.94P0.06/(100)GaAs thin films

Applied physics letters, 2010-03, Vol.96 (10)

2010

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Ferromagnetism in Ga 0.90Mn 0.10As 1 − y P y: From the metallic to the impurity band conduction regime

Thin solid films, 2011, Vol.519 (23), p.8212-8214

2011

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Temperature induced in-plane/out-of-plane magnetization transitionin ferromagnetic Ga 0.93 Mn 0.07 As 0.94 P 0.06 / ( 100 ) GaAs thin films

Applied physics letters, 2010-03, Vol.96 (10), p.102502-102502-3

2010

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Real-time inspection and determination methods of faults on photovoltaic power systems by thermal imaging in Turkey

Disruptive effect of Dzyaloshinskii-Moriya interaction on the magnetic memory cell performance

Tailoring interfacial effect in multilayers with Dzyaloshinskii-Moriya interaction by helium ion irradiation

Dzyaloshinskii-Moriya anisotropy in nanomagnets with in-plane magnetization

Spin pumping and inverse spin Hall effect in germanium

Manipulation of Magnetic Skyrmion Density in Continuous Ir/Co/Pt Multilayers

Controlling spin pumping into superconducting Nb by proximity-induced spin-triplet Cooper pairs

Ferromagnetic tunnel contacts to graphene: Contact resistance and spin signal

Spin transport parameters of NbN thin films characterized by spin pumping experiments

Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

Effect of picosecond strain pulses on thin layers of the ferromagnetic semiconductor (Ga,Mn)(As,P)

Near-field magneto-caloritronic nanoscopy on ferromagnetic nanostructures

Multifunctional ZnO:V thin films deposited by rf-magnetron sputtering from aerogel nanopowder target material

The influence of phosphorus content on magnetic anisotropy in ferromagnetic (Ga, Mn) (As, P)/GaAs thin films

Stochastic current-induced magnetization switching in a single semiconducting ferromagnetic layer

In-plane and out-of-plane spin precession in lateral spin-valves

Fast domain wall dynamics in MnAs/GaAs films

Ferromagnetism in Ga0.90Mn0.10As1―yPy: From the metallic to the impurity band conduction regime

Examination of performance of glassy carbon paste electrode modified with gold nanoparticle and xanthine oxidase for xanthine and hypoxanthine detection

Corrigendum: The influence of phosphorus content on magnetic anisotropy in ferromagnetic (Ga, Mn)(As, P)/GaAs thin films

The influence of phosphorus content on magnetic anisotropy in ferromagnetic (Ga, Mn)(As, P)/GaAs thin films (vol 25, 346001, 2013)

Ferromagnetism in Ga0.90Mn0.10As1<ce:hsp sp="0.12"/>-<ce:hsp sp="0.12"/>yPy: From the metallic to the impurity band conduction regime

Temperature induced in-plane/out-of-plane magnetization transition in ferromagnetic Ga0.93Mn0.07As0.94P0.06/(100)GaAs thin films

Ferromagnetism in Ga 0.90Mn 0.10As 1 − y P y: From the metallic to the impurity band conduction regime

Temperature induced in-plane/out-of-plane magnetization transitionin ferromagnetic Ga 0.93 Mn 0.07 As 0.94 P 0.06 / ( 100 ) GaAs thin films

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