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Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing Czochralski Si crystals

Journal of crystal growth, 2017-09, Vol.474, p.89-95

2017

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Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms

Journal of crystal growth, 2017-09, Vol.474, p.110-120

2017

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Density functional theory study of dopant effect on formation energy of intrinsic point defects in germanium crystals

Journal of crystal growth, 2017-09, Vol.474, p.104-109

2017

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Comparative Study of Carrier Lifetime Dependence on Dopant Concentration in Silicon and Germanium

Journal of the Electrochemical Society, 2007, Vol.154 (3), p.H231

2007

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Improved calculation of vacancy properties in Ge using the Heyd-Scuseria-Ernzerhof range-separated hybrid functional

Journal of applied physics, 2011-09, Vol.110 (6), p.063534-063534-6

2011

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The v/G criterion for defect-free silicon single crystal growth from a melt revisited: Implications for large diameter crystals

Journal of crystal growth, 2013-10, Vol.381, p.134-138

Vanhellemont, Jan

2013

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Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deep-level defects in Ge

Semiconductor science and technology, 2014-12, Vol.29 (12), p.125007

2014

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Brother Silicon, Sister Germanium

Journal of the Electrochemical Society, 2007, Vol.154 (7), p.H572

2007

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Impact of Plane Thermal Stress near the Melt/Solid Interface on the v/G Criterion for Defect-Free Large Diameter Single Crystal Si Growth

ECS solid state letters, 2014-04, Vol.3 (6), p.P69-P72

2014

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Temperature-independent slow carrier emission from deep-level defects in p-type germanium

Journal of physics. D, Applied physics, 2013-10, Vol.46 (42), p.425101-1-7

2013

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Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon

Semiconductor science and technology, 2014-05, Vol.29 (5), p.55008

2014

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Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystals

Materials science in semiconductor processing, 2006-08, Vol.9 (4), p.494-497

2006

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Experimental and theoretical study of the thermal solubility of the vacancy in germanium

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.4529-4532

2009

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Comment on "Experimental Study of the Impact of Stress on the Point Defect Incorporation during Silicon Growth" [ECS Solid State Lett., 3, N5 (2014)]

ECS solid state letters, 2014-02, Vol.3 (5), p.X3-X4

2014

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2 MeV e-irradiation UHVEM study on the impact of O and Ge doping on {113}-defect formation in Si

Physica status solidi. A, Applications and materials science, 2012-10, Vol.209 (10), p.1902-1907

2012

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Germanium doping for improved silicon substrates and devices

Journal of crystal growth, 2011-02, Vol.317 (1), p.8-15

2011

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In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures

Physica status solidi. C, 2015-03, Vol.12 (3), p.275-281

2015

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Oxygen gettering in low-energy arsenic or antimony ion implanted Cz-silicon

Physica status solidi. C, 2014-11, Vol.11 (11-12), p.1634-1639

2014

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Impact of dopants and silicon structure dimensions on {113}-defect formation during 2 MeV electron irradiation in an UHVEM

Physica status solidi. C, 2015-08, Vol.12 (8), p.1160-1165

2015

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Resistivity changes of low resistivity Si substrates by rapid thermal processing and subsequent annealing

Physica status solidi. C, 2014-01, Vol.11 (1), p.32-36

2014

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Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

Physica. B, Condensed matter, 2012-08, Vol.407 (15), p.2998-3001

2012

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Ab initio calculation of the formation energy of charged vacancies in germanium

Physica. B, Condensed matter, 2007-12, Vol.401, p.205-209

2007

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Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices

ECS journal of solid state science and technology, 2016-01, Vol.5 (4), p.P3108-P3137

2016

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Infrared analysis of the precipitated oxide phase in silicon and germanium

Physica. B, Condensed matter, 2006-04, Vol.376, p.113-116

2006

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Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si

Physica. B, Condensed matter, 2007-12, Vol.401, p.222-225

2007

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Theoretical study of the impact of stress and interstitial oxygen on the behavior of intrinsic point defects in growing Czochralski Si crystals

Thermal equilibrium concentration of intrinsic point defects in heavily doped silicon crystals - Theoretical study of formation energy and formation entropy in area of influence of dopant atoms

Density functional theory study of dopant effect on formation energy of intrinsic point defects in germanium crystals

Comparative Study of Carrier Lifetime Dependence on Dopant Concentration in Silicon and Germanium

Improved calculation of vacancy properties in Ge using the Heyd-Scuseria-Ernzerhof range-separated hybrid functional

The v/G criterion for defect-free silicon single crystal growth from a melt revisited: Implications for large diameter crystals

Direct estimation of capture cross sections in the presence of slow capture: application to the identification of quenched-in deep-level defects in Ge

Brother Silicon, Sister Germanium

Impact of Plane Thermal Stress near the Melt/Solid Interface on the v/G Criterion for Defect-Free Large Diameter Single Crystal Si Growth

Temperature-independent slow carrier emission from deep-level defects in p-type germanium

Stimulated oxygen impurity gettering under ultra-shallow junction formation in silicon

Ab initio studies of intrinsic point defects, interstitial oxygen and vacancy or oxygen clustering in germanium crystals

Experimental and theoretical study of the thermal solubility of the vacancy in germanium

Comment on "Experimental Study of the Impact of Stress on the Point Defect Incorporation during Silicon Growth" [ECS Solid State Lett., 3, N5 (2014)]

2 MeV e-irradiation UHVEM study on the impact of O and Ge doping on {113}-defect formation in Si

Germanium doping for improved silicon substrates and devices

In situ UHVEM irradiation study of intrinsic point defect behavior in Si nanowire structures

Oxygen gettering in low-energy arsenic or antimony ion implanted Cz-silicon

Impact of dopants and silicon structure dimensions on {113}-defect formation during 2 MeV electron irradiation in an UHVEM

Resistivity changes of low resistivity Si substrates by rapid thermal processing and subsequent annealing

Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodes

Ab initio calculation of the formation energy of charged vacancies in germanium

Review—Carrier Lifetime Spectroscopy for Defect Characterization in Semiconductor Materials and Devices

Infrared analysis of the precipitated oxide phase in silicon and germanium

Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si

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