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Size Scaling-Rule for the Broadband Radiation Characteristics of Finite-Sized Self-Complementary Bow-Tie Antennas Integrated with Semiconductor Mesas

IEICE transactions on electronics, 2017-06, Vol.E100.C (6), p.632-642

2017

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Analysis of Modulated Terahertz Wave Radiation Characteristics in a Monolithic Integrated Structure Consisting of a Resonant Tunneling Diodes, a Photodiodes and a Self-Complementary Bow-Tie Antenna

IEICE transactions on electronics, 2019-06, Vol.E102.C (6), p.466-470

2019

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Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias

AIP advances, 2020-08, Vol.10 (8), p.085218-085218-5

2020

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Admittance Spectroscopy Up to 67 GHz in InGaAs/InAlAs Triple-Barrier Resonant Tunneling Diodes

IEICE transactions on electronics, 2022-10, Vol.E105.C (10), p.622-626, Article 2021FUS0006

2022

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Erratum: Size Scaling-Rule for the Broadband Radiation Characteristics of Finite-Sized Self-Complementary Bow-Tie Antennas Integrated with Semiconductor Mesas [IEICE Transactions on Electronics Vol. E100.C (2017) No. 6 pp. 632-642]

IEICE transactions on electronics, 2017-01, Vol.E100.C (7), p.669-669_e1

2017

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Equivalent Circuit Modeling of a Semiconductor-Integrated Bow-Tie Antenna for the Physical Interpretation of the Radiation Characteristics in the Terahertz Region

IEICE transactions on electronics, 2016, Vol.E99.C (12), p.1312-1322

2016

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Analysis of Relaxation Oscillation in a Resonant Tunneling Diode Integrated with a Bow-Tie Antenna

IEICE transactions on electronics, 2017-05, Vol.E100.C (5), p.430-438

2017

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FOREWORD

IEICE transactions on electronics, 2020-06, Vol.E103.C (6), p.279-279

SUHARA, Michihiko

2020

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Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz

IEICE transactions on electronics, 2019-06, Vol.E102.C (6), p.462-465

2019

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Analysis of a monolithic integrated rectenna by using an InGaAs/InAlAs triple-barrier resonant tunneling diode for zero bias detection of submilimeter-waves

Physica status solidi. C, 2012-02, Vol.9 (2), p.377-380

2012

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Proposal of Bow-Tie Antenna-Integrated Resonant Tunneling Diode Transmitter Utilizing Relaxation Oscillations and Its Application to Short-Distance Wireless Communications

Journal of infrared, millimeter and terahertz waves, 2018-11, Vol.39 (11), p.1087-1111

2018

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Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

IEICE transactions on electronics, 2012, Vol.E95.C (5), p.871-878

2012

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Demultiplexing Property Owing to a Composite Right/Left-Handed Transmission Line with Leaky Wave Radiation toward Functional Wireless Interconnects

IEICE transactions on electronics, 2010, Vol.E93-C (5), p.619-624

2010

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Time-Domain Analysis of Large-Signal-Based Nonlinear Models for a Resonant Tunneling Diode with an Integrated Antenna

IEICE transactions on electronics, 2012, Vol.E95.C (8), p.1376-1384

2012

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Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes

IEICE transactions on electronics, 2011-01, Vol.E94-C (5), p.820-825

2011

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Implementation of Physics-Based Model for Current-Voltage Characteristics in Resonant Tunneling Diodes by Using the Voigt Function

IEICE transactions on electronics, 2010, Vol.E93-C (8), p.1295-1301

2010

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Broadband Equivalent Circuit Modeling of Self-Complementary Bow-Tie Antennas Monolithically Integrated with Semiconductors for Terahertz Applications

IEICE transactions on electronics, 2009, Vol.E92-C (2), p.269-274

2009

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Characterization and modeling of zero bias rf-detection diodes based on triple barrier resonant tunneling structures

2013 International Conference on Indium Phosphide and Related Materials (IPRM), 2013, p.1-2

2013

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Photo-enhanced reactivation of Si donors deactivated by plasma-induced defects in n-type GaN

Physica status solidi. C, 2007-06, Vol.4 (7), p.2581-2584

2007

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Monolithic Gyrators Using Resonant Tunneling Diodes and Application to Active Inductors

IEICE transactions on electronics, 2008, Vol.E91-C (7), p.1070-1075

2008

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Analysis of Phase Mode Variation Due to Bias Voltage in Arrayed Oscillators Using Resonant Tunneling Diodes Integrated with Bow-Tie Antennas

2018 Progress in Electromagnetics Research Symposium (PIERS-Toyama), 2018, p.2461-2466

2018

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Application of a Cavity Resonator Model for Characterization and Estimation of Radiation From a PCB-Chassis System

IEEE transactions on electromagnetic compatibility, 2014-04, Vol.56 (2), p.475-481

2014

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Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC), 2019, p.214-217

2019

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Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD

Applied surface science, 2003-06, Vol.216 (1), p.413-418

2003

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Improvement in Uniformity of Type-II p-GaAsSb/n-InAs Nanowires on GaAs Substrates by the Insertion of GaAs Segments in Position-controlled VLS Method

MRS advances, 2019-01, Vol.4 (5-6), p.331-336

2019

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Size Scaling-Rule for the Broadband Radiation Characteristics of Finite-Sized Self-Complementary Bow-Tie Antennas Integrated with Semiconductor Mesas

Analysis of Modulated Terahertz Wave Radiation Characteristics in a Monolithic Integrated Structure Consisting of a Resonant Tunneling Diodes, a Photodiodes and a Self-Complementary Bow-Tie Antenna

Improved microwave sensitivity to 706 kV/W by using p-GaAsSb/n-InAs nanowire backward diodes for low-power energy harvesting at zero bias

Admittance Spectroscopy Up to 67 GHz in InGaAs/InAlAs Triple-Barrier Resonant Tunneling Diodes

Erratum: Size Scaling-Rule for the Broadband Radiation Characteristics of Finite-Sized Self-Complementary Bow-Tie Antennas Integrated with Semiconductor Mesas [IEICE Transactions on Electronics Vol. E100.C (2017) No. 6 pp. 632-642]

Equivalent Circuit Modeling of a Semiconductor-Integrated Bow-Tie Antenna for the Physical Interpretation of the Radiation Characteristics in the Terahertz Region

Analysis of Relaxation Oscillation in a Resonant Tunneling Diode Integrated with a Bow-Tie Antenna

FOREWORD

Characterization and Modeling of a GaAsSb/InGaAs Backward Diode on the Basis of S-Parameter Measurement Up to 67 GHz

Analysis of a monolithic integrated rectenna by using an InGaAs/InAlAs triple-barrier resonant tunneling diode for zero bias detection of submilimeter-waves

Proposal of Bow-Tie Antenna-Integrated Resonant Tunneling Diode Transmitter Utilizing Relaxation Oscillations and Its Application to Short-Distance Wireless Communications

Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

Demultiplexing Property Owing to a Composite Right/Left-Handed Transmission Line with Leaky Wave Radiation toward Functional Wireless Interconnects

Time-Domain Analysis of Large-Signal-Based Nonlinear Models for a Resonant Tunneling Diode with an Integrated Antenna

Analysis of Low Loss and Wideband Characteristics for Lumped Element Isolators Implemented by Using Tunnel Diodes

Implementation of Physics-Based Model for Current-Voltage Characteristics in Resonant Tunneling Diodes by Using the Voigt Function

Broadband Equivalent Circuit Modeling of Self-Complementary Bow-Tie Antennas Monolithically Integrated with Semiconductors for Terahertz Applications

Characterization and modeling of zero bias rf-detection diodes based on triple barrier resonant tunneling structures

Photo-enhanced reactivation of Si donors deactivated by plasma-induced defects in n-type GaN

Monolithic Gyrators Using Resonant Tunneling Diodes and Application to Active Inductors

Analysis of Phase Mode Variation Due to Bias Voltage in Arrayed Oscillators Using Resonant Tunneling Diodes Integrated with Bow-Tie Antennas

Application of a Cavity Resonator Model for Characterization and Estimation of Radiation From a PCB-Chassis System

Highly Sensitive p-GaAsSb/n-InAs Nanowire Backward Diodes for Low-Power Microwaves

Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD

Improvement in Uniformity of Type-II p-GaAsSb/n-InAs Nanowires on GaAs Substrates by the Insertion of GaAs Segments in Position-controlled VLS Method

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