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UV hybrid photon detector based on GaN photocathodes and Si low gain avalanche diode

Journal of instrumentation, 2024-07, Vol.19 (7), p.P07020

2024

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Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

Journal of electronic materials, 2016-04, Vol.45 (4), p.2013-2018

2016

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Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

Sensors and actuators. B, Chemical, 2013-01, Vol.176, p.708-712

2013

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Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si(111) on buffer growth conditions by MBE

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-05, Vol.31 (3)

2013

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High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

IEEE electron device letters, 2011-12, Vol.32 (12), p.1677-1679

2011

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Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

Journal of electronic materials, 2014-04, Vol.43 (4), p.1263-1270

2014

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Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template

Optics express, 2012-03, Vol.20 (7), p.8093-8099

2012

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Proton irradiation effects on AlN/GaN high electron mobility transistors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2010-09, Vol.28 (5), p.L47-L51

2010

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TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures

Journal of applied physics, 2010-10, Vol.108 (8), p.084513-084513-5

2010

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Thermal emittance and response time measurements of a GaN photocathode

Journal of applied physics, 2009-04, Vol.105 (8), p.083715-083715-4

2009

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Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility

Electronic Materials Letters, 2014, 10(6), , pp.1087-1092

2014

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Electrical properties of undoped bulk ZnO substrates

Journal of electronic materials, 2006-04, Vol.35 (4), p.663-669

2006

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Electron trapping effects in C- and Fe-doped GaN and AlGaN

Solid-state electronics, 2005-10, Vol.49 (10), p.1662-1668

2005

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High-indium-content InGaN quantum-well structure grown pseudomorphically on a strain-relaxed InGaN template layer

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-05, Vol.30 (3), p.030603-030603-4

2012

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Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas

Vacuum, 2018-02, Vol.148 (C), p.168-172

2018

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Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas

Vacuum, 2018-02, Vol.148 (C)

2018

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SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

International journal of hydrogen energy, 2012-09, Vol.37 (18), p.13783-13788

2012

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Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-05, Vol.31 (3)

2013

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Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2012-01, Vol.30 (1)

2012

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Graded Barrier AlGaN/AlN/GaN Heterostructure for Improved 2-Dimensional Electron Gas Carrier Concentration and Mobility

2014-11

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Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes

Applied surface science, 2008-12, Vol.255 (5), p.2524-2526

2008

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ZnO Nanowire/p-GaN Heterojunction LEDs

MRS proceedings, 2007, Vol.1018, Article 1018-EE12-08

2007

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Injection and Avalanche Electroluminescence of \hbox} \hbox} \hbox} \hbox} \hbox Multiple Quantum Wells

IEEE journal of selected topics in quantum electronics, 2008-07, Vol.14 (4), p.1010-1013

2008

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Improved Long-Term Thermal Stability At 350°C Of TiB2–Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors

Journal of electronic materials, 2007-05, Vol.36 (4), p.379-383

2007

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Improved Long-Term Thermal Stability At 350 deg C Of TiB2-Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors

Journal of electronic materials, 2007-04, Vol.36 (4), p.379-383

2007

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UV hybrid photon detector based on GaN photocathodes and Si low gain avalanche diode

Band Offset Characterization of the Atomic Layer Deposited Aluminum Oxide on m-Plane Indium Nitride

Effect of temperature on CO sensing response in air ambient by using ZnO nanorod-gated AlGaN/GaN high electron mobility transistors

Dependence of structural and electrical properties of AlGaN/GaN HEMT on Si(111) on buffer growth conditions by MBE

High-Performance AlN/GaN HEMTs on Sapphire Substrate With an Oxidized Gate Insulator

Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si(111) and Sapphire Substrates by MBE

Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template

Proton irradiation effects on AlN/GaN high electron mobility transistors

TiAlNiAu contacts for ultrathin AlN/GaN high electron mobility transistor structures

Thermal emittance and response time measurements of a GaN photocathode

Graded barrier AlGaN/AlN/GaN heterostructure for improved 2-dimensional electron gas carrier concentration and mobility

Electrical properties of undoped bulk ZnO substrates

Electron trapping effects in C- and Fe-doped GaN and AlGaN

High-indium-content InGaN quantum-well structure grown pseudomorphically on a strain-relaxed InGaN template layer

Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas

Properties of InGaN/GaN MQW LEDs grown by MOCVD with and without hydrogen carrier gas

SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

Methane detection using Pt-gated AlGaN/GaN high electron mobility transistor based Schottky diodes

Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments

Graded Barrier AlGaN/AlN/GaN Heterostructure for Improved 2-Dimensional Electron Gas Carrier Concentration and Mobility

Effect of bias voltage polarity on hydrogen sensing with AlGaN/GaN Schottky diodes

ZnO Nanowire/p-GaN Heterojunction LEDs

Injection and Avalanche Electroluminescence of \hbox} \hbox} \hbox} \hbox} \hbox Multiple Quantum Wells

Improved Long-Term Thermal Stability At 350°C Of TiB2–Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors

Improved Long-Term Thermal Stability At 350 deg C Of TiB2-Based Ohmic Contacts On AlGaN/GaN High Electron Mobility Transistors

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