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Strategy of Solution-Processed All-Inorganic Heterostructure for Humidity/Temperature-Stable Perovskite Quantum Dot Light-Emitting Diodes

ACS nano, 2018-02, Vol.12 (2), p.1462-1472

2018

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Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

Applied physics letters, 2016-05, Vol.108 (20)

2016

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Localized Surface Plasmon Enhanced All‐Inorganic Perovskite Quantum Dot Light‐Emitting Diodes Based on Coaxial Core/Shell Heterojunction Architecture

Advanced functional materials, 2018-05, Vol.28 (20), p.n/a

2018

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Synergetic Effect of the Surfactant and Silica Coating on the Enhanced Emission and Stability of Perovskite Quantum Dots for Anticounterfeiting

ACS applied materials & interfaces, 2019-08, Vol.11 (31), p.28013-28022

2019

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Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Applied physics letters, 2018-04, Vol.112 (15)

2018

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Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

Applied physics letters, 2014-03, Vol.104 (13)

2014

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Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

Applied physics letters, 2016-02, Vol.108 (6)

2016

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A Novel Optical Path for Enhancing the Performance of High-Power Semiconductor Laser in Packaging

Symmetry (Basel), 2022-08, Vol.14 (8), p.1721

2022

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Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

Journal of materials science. Materials in electronics, 2017-10, Vol.28 (19), p.14341-14347

2017

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Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes

Journal of physics. D, Applied physics, 2016-03, Vol.49 (14), p.145104-145108

2016

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Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

Applied physics letters, 2014-08, Vol.105 (6)

2014

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High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction

Applied physics letters, 2013-07, Vol.103 (2), p.21109

2013

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Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure

Applied physics letters, 2013-04, Vol.102 (16)

2013

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High-Efficiency and Air-Stable Perovskite Quantum Dots Light-Emitting Diodes with an All-Inorganic Heterostructure

Nano letters, 2017-01, Vol.17 (1), p.313-321

2017

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High-Dynamic-Range Photodetecting Scheme Based on PEPT With a Large Output Swing

IEEE transactions on electron devices, 2012-05, Vol.59 (5), p.1423-1429

2012

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Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

Applied physics. A, Materials science & processing, 2014-09, Vol.116 (4), p.1561-1566

2014

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Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

Nanomaterials (Basel, Switzerland), 2018-09, Vol.8 (9), p.744

2018

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n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-AlxGa1−xN electron-blocking layer

Journal of physics. D, Applied physics, 2013-02, Vol.46 (6)

2013

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Photofacilitated Controllable Growth of ZnO Films Using Photoassisted Metal Organic Chemical Vapor Deposition

Crystal growth & design, 2012-09, Vol.12 (9), p.4417-4424

2012

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Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Scientific reports, 2014-09, Vol.4 (1), p.6322-6322, Article 6322

2014

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Study on the luminescence properties of n-ZnO/p-Si hetero-junction diode grown by MOCVD

Journal of physics. D, Applied physics, 2008-02, Vol.41 (3), p.035101-035101 (5)

2008

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Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation

Journal of materials science. Materials in electronics, 2013-12, Vol.24 (12), p.5122-5126

2013

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Growth Pressure Controlled Nucleation Epitaxy of Pure Phase ε- and β‑Ga2O3 Films on Al2O3 via Metal–Organic Chemical Vapor Deposition

Crystal growth & design, 2018-02, Vol.18 (2), p.1147-1154

2018

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A series of asymmetrical phthalocyanines: synthesis and near infrared properties

Molecules (Basel, Switzerland), 2013-04, Vol.18 (4), p.4628-4639

2013

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Strategy of Solution-Processed All-Inorganic Heterostructure for Humidity/Temperature-Stable Perovskite Quantum Dot Light-Emitting Diodes

Hexagonal phase-pure wide band gap ε-Ga2O3 films grown on 6H-SiC substrates by metal organic chemical vapor deposition

Localized Surface Plasmon Enhanced All‐Inorganic Perovskite Quantum Dot Light‐Emitting Diodes Based on Coaxial Core/Shell Heterojunction Architecture

Synergetic Effect of the Surfactant and Silica Coating on the Enhanced Emission and Stability of Perovskite Quantum Dots for Anticounterfeiting

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

A Novel Optical Path for Enhancing the Performance of High-Power Semiconductor Laser in Packaging

Growth temperature impact on film quality of hBN grown on Al2O3 using non-catalyzed borazane CVD

Shockley-Read-Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes

Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy

High-performance ultraviolet-blue light-emitting diodes based on an n-ZnO nanowall networks/p-GaN heterojunction

Vertical conducting ultraviolet light-emitting diodes based on p-ZnO:As/n-GaN/n-SiC heterostructure

High-Efficiency and Air-Stable Perovskite Quantum Dots Light-Emitting Diodes with an All-Inorganic Heterostructure

High-Dynamic-Range Photodetecting Scheme Based on PEPT With a Large Output Swing

Smooth surface morphology and low dislocation density of p-GaN using indium-assisted growth

Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN

n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-AlxGa1−xN electron-blocking layer

Photofacilitated Controllable Growth of ZnO Films Using Photoassisted Metal Organic Chemical Vapor Deposition

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Study on the luminescence properties of n-ZnO/p-Si hetero-junction diode grown by MOCVD

Research on the structural and optical stability of Ga2O3 films deposited by electron beam evaporation

Growth Pressure Controlled Nucleation Epitaxy of Pure Phase ε- and β‑Ga2O3 Films on Al2O3 via Metal–Organic Chemical Vapor Deposition

A series of asymmetrical phthalocyanines: synthesis and near infrared properties

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