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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

IEEE electron device letters, 2008-04, Vol.29 (4), p.287-289

2008

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A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

IEEE transactions on electron devices, 2011-01, Vol.58 (1), p.132-140

2011

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Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2895-2901

2009

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Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

Applied physics letters, 2022-02, Vol.120 (8)

2022

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TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

IEEE electron device letters, 2008-10, Vol.29 (10), p.1098-1100

2008

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A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Microelectronics and reliability, 2010-06, Vol.50 (6), p.767-773

2010

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Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Microelectronics and reliability, 2011-02, Vol.51 (2), p.201-206

2011

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Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications

2014 IEEE International Reliability Physics Symposium, 2014, p.6C.5.1-6C.5.4

2014

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High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Microelectronics and reliability, 2010-06, Vol.50 (6), p.758-762

2010

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Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

IEEE transactions on electron devices, 2012-10, Vol.59 (10), p.2667-2674

2012

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Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Applied physics letters, 2009-07, Vol.95 (3), p.033510-033510-3

2009

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Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors

2011 International Reliability Physics Symposium, 2011, p.4E.3.1-4E.3.4

2011

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Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs

ECS transactions, 2023-09, Vol.112 (2), p.9-20

2023

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A systems engineering approach to collaborative coordination of UAS in the NAS with safety guarantees

2014 Integrated Communications, Navigation and Surveillance Conference (ICNS) Conference Proceedings, 2014, p.U1-1-U1-12

2014

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Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2010-06, Vol.96 (23)

2010

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Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited)

2024 IEEE International Reliability Physics Symposium (IRPS), 2024, p.1-7

2024

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Electromigration in strapped metal layers with large dimensions for lateral power device applications

2014 IEEE International Reliability Physics Symposium, 2014, p.2A.4.1-2A.4.4

2014

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Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

IEEE transactions on electron devices, 2017-08, Vol.64 (8), p.3132-3138

2017

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Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.890-895

2019

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Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.P21-1-P21-6

2022

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Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Applied physics letters, 2012-04, Vol.100 (17), p.172109-172109-3

2012

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Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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Strapped Cu interconnect for enhancing electromigration limit for power device application

2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, p.368-371

2020

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Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-5

2019

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A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors

IEEE electron device letters, 2008-07, Vol.29 (7), p.665-667

2008

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Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors

A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors

Measurement of Channel Temperature in GaN High-Electron Mobility Transistors

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

Role of stress voltage on structural degradation of GaN high-electron-mobility transistors

Current collapse in GaN heterojunction field effect transistors for high-voltage switching applications

High voltage degradation of GaN High Electron Mobility Transistors on silicon substrate

Strain and Temperature Dependence of Defect Formation at AlGaN/GaN High-Electron-Mobility Transistors on a Nanometer Scale

Nanoscale mapping of temperature and defect evolution inside operating AlGaN/GaN high electron mobility transistors

Time evolution of electrical degradation under high-voltage stress in GaN high electron mobility transistors

Degradation and Failure Mechanism of p-GaN Gate E-Mode GaN HEMTs

A systems engineering approach to collaborative coordination of UAS in the NAS with safety guarantees

Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors

Mission Profile Approach for the Calculation of GaN FET Reliability in Power Supply Applications (Invited)

Electromigration in strapped metal layers with large dimensions for lateral power device applications

Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors

Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors

Strapped Cu interconnect for enhancing electromigration limit for power device application

Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs

A Simple Current Collapse Measurement Technique for GaN High-Electron Mobility Transistors

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