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Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays

Nano letters, 2017-03, Vol.17 (3), p.1538-1544

2017

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Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge–Si Core–Shell Nanowires

Nano letters, 2017-04, Vol.17 (4), p.2259-2264

2017

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Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity

Nano letters, 2017-02, Vol.17 (2), p.599-605

2017

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The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory

Journal of physics. D, Applied physics, 2013-07, Vol.46 (26), p.264001-1-10

2013

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Structural and electronic properties of isovalent boron atoms in GaAs

Journal of applied physics, 2018-04, Vol.123 (16)

2018

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Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

Applied physics letters, 2014-10, Vol.105 (15)

2014

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Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea

Nature physics, 2010-07, Vol.6 (7), p.534-538

2010

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An atomic scale study on the effect of Sb during capping of MBE grown III–V semiconductor QDs

Semiconductor science and technology, 2011-06, Vol.26 (6), p.064007

2011

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Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing

Applied physics letters, 2012-12, Vol.101 (24)

2012

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Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

Applied physics letters, 2005-09, Vol.87 (13), p.131902-131902-3

2005

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Long wavelength (>1.55 μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals

Applied physics letters, 2013-02, Vol.102 (7)

2013

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Bistable Charge Configuration of Donor Systems near the GaAs(110) Surfaces

Nano letters, 2011-09, Vol.11 (9), p.3538-3542

2011

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Capping process of InAs∕GaAs quantum dots studied by cross-sectional scanning tunneling microscopy

Applied physics letters, 2004-12, Vol.85 (23), p.5697-5699

2004

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Warping a single Mn acceptor wavefunction by straining the GaAs host

Nature materials, 2007-07, Vol.6 (7), p.512-515

2007

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Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

Applied physics letters, 2002-08, Vol.81 (9), p.1708-1710

2002

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Spatially resolved electronic structure of an isovalent nitrogen center in GaAs

Physical review. B, 2017-10, Vol.96 (15), Article 155210

2017

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Formation of InAs wetting layers studied by cross-sectional scanning tunneling microscopy

Applied physics letters, 2005-09, Vol.87 (11), p.111903-111903-3

2005

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Photoluminescence studies of individual and few GaSb/GaAs quantum rings

AIP advances, 2014-11, Vol.4 (11), p.117127-117127-6

2014

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Nanoscale Potential Fluctuations in (GaMn)As/GaAs Heterostructures: From Individual Ions to Charge Clusters and Electrostatic Quantum Dots

Nano letters, 2010-12, Vol.10 (12), p.4874-4879

2010

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Optical study of the band structure of wurtzite GaP nanowires

Journal of applied physics, 2016-07, Vol.120 (4)

2016

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InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

Applied physics letters, 2014-02, Vol.104 (5)

2014

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Bistable Si dopants in the GaAs (1 1 0) surface

Journal of physics. Condensed matter, 2015-04, Vol.27 (15), p.154201-154201

2015

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Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors

Sensors and actuators. A. Physical., 2022-02, Vol.334, p.113357, Article 113357

2022

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Electron and exciton energy spectra in self-assembled InGaAs/GaAs ring-like nanostructures

Physica Status Solidi (b), 2008-12, Vol.245 (12), p.2657-2661

2008

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Analysis of the modified optical properties and band structure of GaAs1−xSbx-capped InAs/GaAs quantum dots

Journal of applied physics, 2012-10, Vol.112 (7)

2012

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Growth and Optical Properties of Direct Band Gap Ge/Ge0.87Sn0.13 Core/Shell Nanowire Arrays

Boosting Hole Mobility in Coherently Strained [110]-Oriented Ge–Si Core–Shell Nanowires

Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity

The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory

Structural and electronic properties of isovalent boron atoms in GaAs

Composition profiling of GaAs/AlGaAs quantum dots grown by droplet epitaxy

Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea

An atomic scale study on the effect of Sb during capping of MBE grown III–V semiconductor QDs

Atomically resolved study of the morphology change of InAs/GaAs quantum dot layers induced by rapid thermal annealing

Atomic-scale structure of self-assembled In(Ga)As quantum rings in GaAs

Long wavelength (>1.55 μm) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals

Bistable Charge Configuration of Donor Systems near the GaAs(110) Surfaces

Capping process of InAs∕GaAs quantum dots studied by cross-sectional scanning tunneling microscopy

Warping a single Mn acceptor wavefunction by straining the GaAs host

Determination of the shape and indium distribution of low-growth-rate InAs quantum dots by cross-sectional scanning tunneling microscopy

Spatially resolved electronic structure of an isovalent nitrogen center in GaAs

Formation of InAs wetting layers studied by cross-sectional scanning tunneling microscopy

Photoluminescence studies of individual and few GaSb/GaAs quantum rings

Nanoscale Potential Fluctuations in (GaMn)As/GaAs Heterostructures: From Individual Ions to Charge Clusters and Electrostatic Quantum Dots

Optical study of the band structure of wurtzite GaP nanowires

InAs quantum dot morphology after capping with In, N, Sb alloyed thin films

Bistable Si dopants in the GaAs (1 1 0) surface

Effect of As flux on InAs submonolayer quantum dot formation for infrared photodetectors

Electron and exciton energy spectra in self-assembled InGaAs/GaAs ring-like nanostructures

Analysis of the modified optical properties and band structure of GaAs1−xSbx-capped InAs/GaAs quantum dots

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