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Minimum Line Width of Surface Plasmon Resonance in Doped ZnO Nanocrystals

Nano letters, 2017-12, Vol.17 (12), p.7599-7605

Delerue, Christophe

2017

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Infrared photoconduction at the diffusion length limit in HgTe nanocrystal arrays

Nature communications, 2021-03, Vol.12 (1), p.1794-1794, Article 1794

2021

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Effects of Strain on the Carrier Mobility in Silicon Nanowires

Nano letters, 2012-07, Vol.12 (7), p.3545-3550

2012

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Comparative Study on the Localized Surface Plasmon Resonance of Boron- and Phosphorus-Doped Silicon Nanocrystals

ACS nano, 2015-01, Vol.9 (1), p.378-386

2015

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High charge mobility in two-dimensional percolative networks of PbSe quantum dots connected by atomic bonds

Nature communications, 2015-09, Vol.6 (1), p.8195-8195, Article 8195

2015

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Ab initio study on the effect of structural relaxation on the electronic and optical properties of P-doped Si nanocrystals

Journal of applied physics, 2014-11, Vol.116 (19)

2014

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Setting Carriers Free: Healing Faulty Interfaces Promotes Delocalization and Transport in Nanocrystal Solids

ACS nano, 2019-11, Vol.13 (11), p.12774-12786

2019

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Carrier mobility in strained Ge nanowires

Journal of applied physics, 2012-10, Vol.112 (8), p.084301-1-4

2012

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Theoretical investigation of the phonon-limited carrier mobility in (001) Si films

Journal of applied physics, 2016-11, Vol.120 (17)

2016

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Drift velocity versus electric field in ⟨110⟩ Si nanowires: Strong confinement effects

Applied physics letters, 2015-08, Vol.107 (6)

2015

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Asymmetric Optical Transitions Determine the Onset of Carrier Multiplication in Lead Chalcogenide Quantum Confined and Bulk Crystals

ACS nano, 2018-05, Vol.12 (5), p.4796-4802

2018

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Nanocrystal solids: Order and progress

Nature materials, 2016-05, Vol.15 (5), p.498-499

Delerue, Christophe

2016

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From semiconductor nanocrystals to artificial solids with dimensionality below two

Physical chemistry chemical physics : PCCP, 2014-12, Vol.16 (47), p.25734-2574

Delerue, Christophe

2014

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Impurity-limited mobility and variability in gate-all-around silicon nanowires

Applied physics letters, 2012-04, Vol.100 (15), p.153119-153119-4

2012

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Hole mobility in Ge/Si core/shell nanowires: What could be the optimum?

Applied physics letters, 2014-12, Vol.105 (23)

2014

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From lattice Hamiltonians to tunable band structures by lithographic design

Physical review. B, 2016-08, Vol.94 (7), Article 075441

2016

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A Phonon Scattering Bottleneck for Carrier Cooling in Lead Chalcogenide Nanocrystals

ACS nano, 2015-01, Vol.9 (1), p.778-788

2015

Volltextzugriff (PDF)

Order and progress

Nature materials, 2016-05, Vol.15 (5), p.498-499

Delerue, Christophe

2016

Volltextzugriff (PDF)

Colloidal nanocrystals as LEGO® bricks for building electronic band structure models

Physical chemistry chemical physics : PCCP, 2018, Vol.20 (12), p.8177-8184

2018

Volltextzugriff (PDF)

Optical Investigation of Quantum Confinement in PbSe Nanocrystals at Different Points in the Brillouin Zone

Small (Weinheim an der Bergstrasse, Germany), 2008-01, Vol.4 (1), p.127-133

2008

Volltextzugriff (PDF)

Colloidal nanocrystals as LEGO® bricks for building electronic band structure modelsElectronic supplementary information (ESI) available: Additional figures of the comparison between atomistic tight-binding results and the LEGO® model for other investigated structures of CdSe and PbSe compounds. See DOI: 10.1039/c7cp08400e

2018-03

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Single-exciton optical gain in semiconductor nanocrystals: Positive role of electron-phonon coupling

Physical review. B, 2016-03, Vol.93 (11), Article 115416

2016

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Screening and polaronic effects induced by a metallic gate and a surrounding oxide on donor and acceptor impurities in silicon nanowires

Journal of applied physics, 2008-04, Vol.103 (7), p.073703-1-5

2008

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A tight-binding model for illustrating exciton confinement in semiconductor nanocrystals

The Journal of chemical physics, 2024-03, Vol.160 (11)

2024

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Robustness of states at the interface between topological insulators of opposite spin Chern number

Europhysics letters, 2017-06, Vol.118 (6), p.67003

2017

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Minimum Line Width of Surface Plasmon Resonance in Doped ZnO Nanocrystals

Infrared photoconduction at the diffusion length limit in HgTe nanocrystal arrays

Effects of Strain on the Carrier Mobility in Silicon Nanowires

Comparative Study on the Localized Surface Plasmon Resonance of Boron- and Phosphorus-Doped Silicon Nanocrystals

High charge mobility in two-dimensional percolative networks of PbSe quantum dots connected by atomic bonds

Ab initio study on the effect of structural relaxation on the electronic and optical properties of P-doped Si nanocrystals

Setting Carriers Free: Healing Faulty Interfaces Promotes Delocalization and Transport in Nanocrystal Solids

Carrier mobility in strained Ge nanowires

Theoretical investigation of the phonon-limited carrier mobility in (001) Si films

Drift velocity versus electric field in ⟨110⟩ Si nanowires: Strong confinement effects

Asymmetric Optical Transitions Determine the Onset of Carrier Multiplication in Lead Chalcogenide Quantum Confined and Bulk Crystals

Nanocrystal solids: Order and progress

From semiconductor nanocrystals to artificial solids with dimensionality below two

Impurity-limited mobility and variability in gate-all-around silicon nanowires

Hole mobility in Ge/Si core/shell nanowires: What could be the optimum?

From lattice Hamiltonians to tunable band structures by lithographic design

A Phonon Scattering Bottleneck for Carrier Cooling in Lead Chalcogenide Nanocrystals

Order and progress

Colloidal nanocrystals as LEGO® bricks for building electronic band structure models

Optical Investigation of Quantum Confinement in PbSe Nanocrystals at Different Points in the Brillouin Zone

Single-exciton optical gain in semiconductor nanocrystals: Positive role of electron-phonon coupling

Screening and polaronic effects induced by a metallic gate and a surrounding oxide on donor and acceptor impurities in silicon nanowires

A tight-binding model for illustrating exciton confinement in semiconductor nanocrystals

Robustness of states at the interface between topological insulators of opposite spin Chern number

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