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Associations with baseline visual acuity in 12,414 eyes starting treatment for neovascular AMD

Eye (London), 2023-06, Vol.37 (8), p.1652-1658

2023

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The doping process and dopant characteristics of GaN

Journal of physics. Condensed matter, 2002-06, Vol.14 (22), p.R657-R702, Article 201

2002

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White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

IEEE photonics technology letters, 2003-01, Vol.15 (1), p.18-20

2003

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Associations with visual acuity outcomes after 12 months of treatment in 9401 eyes with neovascular AMD

BMJ open ophthalmology, 2022-06, Vol.7 (1), p.e001038

2022

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Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes

IEEE electron device letters, 2011-08, Vol.32 (8), p.1098-1100

2011

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Dip Pen Nanolithography of Conductive Silver Traces

Journal of physical chemistry. C, 2010-06, Vol.114 (21), p.9672-9677

2010

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Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template

IEEE photonics technology letters, 2010-02, Vol.22 (4), p.257-259

2010

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GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

IEEE photonics technology letters, 2001-08, Vol.13 (8), p.848-850

2001

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Development of global health education at Johns Hopkins University School of Medicine: a student-driven initiative

Medical education online, 2015-01, Vol.20 (1), p.28632-28632

2015

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Oxygen sensors made by monolayer graphene under room temperature

Applied physics letters, 2011-12, Vol.99 (24), p.243502

2011

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Optical and structural properties of Eu-diffused and doped ZnO nanowires

Applied surface science, 2009-10, Vol.256 (1), p.187-190

2009

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Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers

IEEE electron device letters, 2011-10, Vol.32 (10), p.1400-1402

2011

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Effects of rapid thermal annealing on the structural properties of TiO2 nanotubes

Applied surface science, 2011-10, Vol.258 (1), p.530-534

2011

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Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2005-08, Vol.282 (1), p.112-116

2005

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High-transparency Ni/Au ohmic contact to p -type GaN

Applied physics letters, 1999-04, Vol.74 (16), p.2340-2342

1999

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Effects of Thermal Annealing on Al-Doped ZnO Films Deposited on p-Type Gallium Nitride

Journal of the Electrochemical Society, 2006-01, Vol.153 (4), p.G296

2006

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Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition

Journal of crystal growth, 2009, Vol.311 (2), p.249-253

2009

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Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer

IEEE electron device letters, 2004-09, Vol.25 (9), p.593-595

2004

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GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

IEEE electron device letters, 2003-04, Vol.24 (4), p.212-214

2003

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White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

IEEE photonics technology letters, 2002-04, Vol.14 (4), p.450-452

2002

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Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

IEEE journal of quantum electronics, 2010-03, Vol.46 (3), p.391-395

2010

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Partnerships for community resilience: perspectives from the Los Angeles County Community Disaster Resilience project

Public health (London), 2015-09, Vol.129 (9), p.1297-1300

2015

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Structural and optical properties of ZnO epilayers grown by plasma-assisted molecular beam epitaxy on GaN/sapphire (0 0 0 1)

Journal of crystal growth, 2007-07, Vol.305 (1), p.133-136

2007

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Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

Applied physics letters, 1998-06, Vol.72 (25), p.3317-3319

1998

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Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition

Applied surface science, 2009-05, Vol.255 (15), p.6809-6813

2009

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Associations with baseline visual acuity in 12,414 eyes starting treatment for neovascular AMD

The doping process and dopant characteristics of GaN

White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

Associations with visual acuity outcomes after 12 months of treatment in 9401 eyes with neovascular AMD

Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes

Dip Pen Nanolithography of Conductive Silver Traces

Efficiency Improvement of GaN-Based Light-Emitting Diode Prepared on GaN Nanorod Template

GaN metal-semiconductor-metal ultraviolet photodetectors with transparent indium-tin-oxide Schottky contacts

Development of global health education at Johns Hopkins University School of Medicine: a student-driven initiative

Oxygen sensors made by monolayer graphene under room temperature

Optical and structural properties of Eu-diffused and doped ZnO nanowires

Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers

Effects of rapid thermal annealing on the structural properties of TiO2 nanotubes

Photoluminescence of ZnO films grown by plasma-assisted molecular beam epitaxy

High-transparency Ni/Au ohmic contact to p -type GaN

Effects of Thermal Annealing on Al-Doped ZnO Films Deposited on p-Type Gallium Nitride

Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition

Reduction of dark current in AlGaN-GaN Schottky-barrier photodetectors with a low-temperature-grown GaN cap layer

GaN metal-semiconductor-metal photodetectors with low-temperature-GaN cap layers and ITO metal contacts

White-light emission from InGaN-GaN multiquantum-well light-emitting diodes with Si and Zn codoped active well layer

Efficiency Dependence on Degree of Localization States in GaN-Based Asymmetric Two-Step Light-Emitting Diode With a Low Indium Content InGaN Shallow Step

Partnerships for community resilience: perspectives from the Los Angeles County Community Disaster Resilience project

Structural and optical properties of ZnO epilayers grown by plasma-assisted molecular beam epitaxy on GaN/sapphire (0 0 0 1)

Effects of thermal annealing on the indium tin oxide Schottky contacts of n-GaN

Surface morphology and optical properties of ZnO epilayers grown on Si(1 1 1) by metal organic chemical vapor deposition

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