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The Past, Present, and Future of Silicon Photonics

IEEE journal of selected topics in quantum electronics, 2006-11, Vol.12 (6), p.1678-1687

Soref, R.

2006

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The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applications

Journal of applied physics, 2012-10, Vol.112 (7)

2012

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GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

Applied physics letters, 2013-12, Vol.103 (23)

2013

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Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode

Optics express, 2010-09, Vol.18 (19), p.19957-19965

2010

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Germanium as a material for stimulated Brillouin scattering in the mid-infrared

Optics express, 2014-12, Vol.22 (25), p.30735-30747

2014

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Longwave IR lattice matched L-valley Ge/GeSiSn waveguide quantum cascade detector

Optics express, 2022-11, Vol.30 (23), p.42385-42393

2022

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Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser

Journal of applied physics, 2010-08, Vol.108 (3), p.033107-033107-6

2010

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Sn-based Ge/Ge0.975Sn0.025/Ge p-i-n photodetector operated with back-side illumination

Applied physics letters, 2016-04, Vol.108 (15)

2016

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Practical enhancement of photoluminescence by metal nanoparticles

Applied physics letters, 2009-03, Vol.94 (10), p.101103-101103-3

2009

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Plasmonic light-emission enhancement with isolated metal nanoparticles and their coupled arrays

Journal of the Optical Society of America. B, Optical physics, 2008-10, Vol.25 (10), p.1748

2008

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Design and simulation of silicon microring optical routing switches

Journal of lightwave technology, 2005-04, Vol.23 (4), p.1800-1807

2005

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Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate

Applied physics letters, 2013-05, Vol.102 (18)

2013

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High efficiency thin-film crystalline Si/Ge tandem solar cell

Optics express, 2010-02, Vol.18 (4), p.3746-3753

2010

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Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy

Applied physics letters, 2016-05, Vol.108 (19)

2016

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Practical limits of absorption enhancement near metal nanoparticles

Applied physics letters, 2009-02, Vol.94 (7), p.071103-071103-3

2009

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IR permittivities for silicides and doped silicon

Journal of the Optical Society of America. B, Optical physics, 2010-04, Vol.27 (4), p.730

2010

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Simulations of Nanoscale Room Temperature Waveguide-Coupled Single-Photon Avalanche Detectors for Silicon Photonic Sensing and Quantum Applications

ACS applied nano materials, 2019-12, Vol.2 (12), p.7503-7512

2019

Volltextzugriff (PDF)

Synthesis of dual-microring-resonator cross-connect filters

Optics express, 2005-06, Vol.13 (12), p.4439-4456

2005

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Silicon-based optoelectronics

Proceedings of the IEEE, 1993-12, Vol.81 (12), p.1687-1706

Soref, R.A.

1993

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Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

Applied physics letters, 2007-06, Vol.90 (25)

2007

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Wideband perfect light absorber at midwave infrared using multiplexed metal structures

Optics letters, 2012-02, Vol.37 (3), p.371

2012

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Demonstration of reconfigurable electro-optical logic with silicon photonic integrated circuits

Optics letters, 2012-10, Vol.37 (19), p.3942

2012

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Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1-14- \mu\hbox Infrared Wavelength Range

IEEE photonics journal, 2011-12, Vol.3 (6), p.1171-1180

2011

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SiGe/Si THz laser based on transitions between inverted mass light-hole and heavy-hole subbands

Applied physics letters, 2001-01, Vol.78 (4), p.401-403

2001

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Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

Electronics letters, 2015-05, Vol.51 (11), p.854-856

2015

Volltextzugriff (PDF)

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The Past, Present, and Future of Silicon Photonics

The direct and indirect bandgaps of unstrained SixGe1−x−ySny and their photonic device applications

GeSn-based p-i-n photodiodes with strained active layer on a Si wafer

Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode

Germanium as a material for stimulated Brillouin scattering in the mid-infrared

Longwave IR lattice matched L-valley Ge/GeSiSn waveguide quantum cascade detector

Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser

Sn-based Ge/Ge0.975Sn0.025/Ge p-i-n photodetector operated with back-side illumination

Practical enhancement of photoluminescence by metal nanoparticles

Plasmonic light-emission enhancement with isolated metal nanoparticles and their coupled arrays

Design and simulation of silicon microring optical routing switches

Mid-infrared electroluminescence from a Ge/Ge0.922Sn0.078/Ge double heterostructure p-i-n diode on a Si substrate

High efficiency thin-film crystalline Si/Ge tandem solar cell

Disorder-induced enhancement of indirect absorption in a GeSn photodetector grown by molecular beam epitaxy

Practical limits of absorption enhancement near metal nanoparticles

IR permittivities for silicides and doped silicon

Simulations of Nanoscale Room Temperature Waveguide-Coupled Single-Photon Avalanche Detectors for Silicon Photonic Sensing and Quantum Applications

Synthesis of dual-microring-resonator cross-connect filters

Silicon-based optoelectronics

Strain-free Ge∕GeSiSn quantum cascade lasers based on L-valley intersubband transitions

Wideband perfect light absorber at midwave infrared using multiplexed metal structures

Demonstration of reconfigurable electro-optical logic with silicon photonic integrated circuits

Free-Carrier Electrorefraction and Electroabsorption Modulation Predictions for Silicon Over the 1-14- \mu\hbox Infrared Wavelength Range

SiGe/Si THz laser based on transitions between inverted mass light-hole and heavy-hole subbands

Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

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