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Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

IEEE electron device letters, 2014-05, Vol.35 (5), p.515-517

2014

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InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.501-506

2015

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Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

Applied physics letters, 2014-07, Vol.105 (3)

2014

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Design and Implementation of RF Front-End Module Based on 3D Heterogenous-Integrated Wafer-Level Packaging

Electronics (Basel), 2021-08, Vol.10 (16), p.1893

2021

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A 11 mW 2.4 GHz 0.18 µm CMOS Transceivers for Wireless Sensor Networks

Sensors (Basel, Switzerland), 2017-01, Vol.17 (2), p.223

2017

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Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Active and passive electronic components, 2017-01, Vol.2017

2017

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A composite algorithm of lithography process in AlGaN/GaN-on-SiC HEMTs manufacturing

Materials science & engineering. B, Solid-state materials for advanced technology, 2024-02, Vol.300, p.117065, Article 117065

2024

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Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side

Electronics (Basel), 2024-02, Vol.13 (3), p.653

2024

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A New Digital to Analog Converter Based on Low-Offset Bandgap Reference

Journal of Electrical and Computer Engineering, 2017-01, Vol.2017, p.1-10

2017

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InGaAs MOSFETs with InP drain

72nd Device Research Conference, 2014, p.119-120

2014

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Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

26th International Conference on Indium Phosphide and Related Materials (IPRM), 2014, p.1-2

2014

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A Ka-band low power consumption MMIC core chip for T/R modules

International journal of electronics and communications, 2018-07, Vol.91, p.37-43

2018

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Importance of the substrate's surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides

Nanotechnology, 2020-03, Vol.31 (12), p.125604-125604

2020

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Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice

Journal of physical chemistry. C, 2020-03, Vol.124 (11), p.6472-6478

2020

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Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS 2 Lattice

Journal of physical chemistry. C, 2020-03, Vol.124 (11), p.6472-6478

2020

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A Blind Calibration Model for I/Q Imbalances of Wideband Zero-IF Receivers

Electronics (Basel), 2020-11, Vol.9 (11), p.1868

2020

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A 11 mW 2.4 GHz 0.18 mu m CMOS Transceivers for Wireless Sensor Networks

Sensors (Basel, Switzerland), 2017-02, Vol.17 (2), p.223-223

2017

Volltextzugriff (PDF)

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO 2 and Si 3 N 4 /SiO 2 Gate Dielectrics

Active and passive electronic components, 2017, Vol.2017, p.1-7

2017

Volltextzugriff (PDF)

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with Si[O.sub.2] and [Si.sub.3][N.sub.4]/Si[O.sub.2] Gate Dielectrics

Active and passive electronic components, 2017-01, p.1

2017

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Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric

Applied physics letters, 2015-05, Vol.106 (20)

2015

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An Area-Efficient and Programmable 4 × 25-to-28.9 Gb/s Optical Receiver with DCOC in 0.13 µm SiGe BiCMOS

Electronics (Basel), 2020-06, Vol.9 (6), p.1032

2020

Volltextzugriff (PDF)

X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

Electronics (Basel), 2019-11, Vol.8 (11), p.1312

2019

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A new meshing criterion for the equivalent thermal analysis of GaAs PHEMT MMICs

Microelectronics and reliability, 2017-01, Vol.68, p.30-38

2017

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High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application

Journal of sensors, 2017-01, Vol.2017, p.1-9

2017

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MMIC on-Wafer Test Method Based on Hybrid Balanced and Unbalanced RF Pad Structures

Electronics (Basel), 2018-09, Vol.7 (9), p.208

2018

Volltextzugriff (PDF)

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Asymmetric InGaAs/InP MOSFETs With Source/Drain Engineering

InP Drain Engineering in Asymmetric InGaAs/InP MOSFETs

Reduction of off-state drain leakage in InGaAs-based metal-oxide-semiconductor field-effect transistors

Design and Implementation of RF Front-End Module Based on 3D Heterogenous-Integrated Wafer-Level Packaging

A 11 mW 2.4 GHz 0.18 µm CMOS Transceivers for Wireless Sensor Networks

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

A composite algorithm of lithography process in AlGaN/GaN-on-SiC HEMTs manufacturing

Asymmetric GaN High Electron Mobility Transistors Design with InAlN Barrier at Source Side and AlGaN Barrier at Drain Side

A New Digital to Analog Converter Based on Low-Offset Bandgap Reference

InGaAs MOSFETs with InP drain

Asymmetric InGaAs MOSFETs with InGaAs source and InP drain

A Ka-band low power consumption MMIC core chip for T/R modules

Importance of the substrate's surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides

Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice

Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS 2 Lattice

A Blind Calibration Model for I/Q Imbalances of Wideband Zero-IF Receivers

A 11 mW 2.4 GHz 0.18 mu m CMOS Transceivers for Wireless Sensor Networks

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO 2 and Si 3 N 4 /SiO 2 Gate Dielectrics

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with Si[O.sub.2] and [Si.sub.3][N.sub.4]/Si[O.sub.2] Gate Dielectrics

Defect evaluation in InGaAs field effect transistors with HfO2 or Al2O3 dielectric

An Area-Efficient and Programmable 4 × 25-to-28.9 Gb/s Optical Receiver with DCOC in 0.13 µm SiGe BiCMOS

X-Band High-Efficiency Continuous Class B Power Amplifier GaN MMIC Assisted by Input Second-Harmonic Tuning

A new meshing criterion for the equivalent thermal analysis of GaAs PHEMT MMICs

High Frequency InGaAs MOSFET with Nitride Sidewall Design for Low Power Application

MMIC on-Wafer Test Method Based on Hybrid Balanced and Unbalanced RF Pad Structures

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