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Electric field measurement for quantum-dot cellular automata clocking circuits

Surface and interface analysis, 2008-12, Vol.40 (12), p.1503-1506

Yan, Minjun

2008

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Impact of Molecular Subgroups on Prognosis and Survival Outcomes in Posterior Fossa Ependymomas: A Retrospective Study of 412 Cases

Neurosurgery, 2024-09, Vol.95 (3), p.651

2024

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Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure

Physica status solidi. A, Applications and materials science, 2011-07, Vol.208 (7), p.1538-1540

2011

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A quantitative method for dual-pass electrostatic force microscopy phase measurements

Surface and interface analysis, 2007-04, Vol.39 (4), p.354-358

2007

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On the Source of Jitter in a Room-Temperature Nanoinjection Photon Detector at 1.55 μm

IEEE electron device letters, 2008-08, Vol.29 (8), p.867-869

2008

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Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an Al2O3/SiNx Dielectric Layer

IEEE electron device letters, 2009-09, Vol.30 (9), p.913-915

2009

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Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

Semiconductor science and technology, 2014-09, Vol.29 (9), p.95005

2014

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PLAs in Quantum-Dot Cellular Automata

IEEE transactions on nanotechnology, 2008-05, Vol.7 (3), p.376-386

2008

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A novel vision measurement system for health monitoring of tunnel structures

Mechanics of advanced materials and structures, 2022-06, Vol.29 (15), p.2208-2218

2022

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PD‐L1 regulates tumor proliferation and T‐cell function in NF2‐associated meningiomas

CNS neuroscience & therapeutics, 2024-06, Vol.30 (6), p.e14784-n/a

2024

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Effects of Weld Bead Arrangements on the Performance of V-shaped Asymmetric Curved Groove Welded Joints

High temperature material processes, 2024

2024

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Auditory brainstem implants for hearing rehabilitation in NF2-schwannomatosis: A systematic review and single-arm meta-analysis

NeuroRehabilitation (Reading, Mass.), 2024-01, Vol.54 (2), p.213-225

2024

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On the Source of Jitter in a Room-Temperature Nanoinjection Photon Detector at 1.55 \mu \hbox

IEEE electron device letters, 2008-08, Vol.29 (8), p.867-869

2008

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Multiple Kernel Learning Based Classification of Parkinson's Disease With Multi-Modal Transcranial Sonography

2018 40th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC), 2018, Vol.2018, p.61-64

2018

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Fabrication of triangular nanochannels using the collapse of hydrogen silsesquioxane resists

Applied physics letters, 2008-10, Vol.93 (16), p.163113-163113-3

2008

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Apparent height in tapping mode of electrostatic force microscopy

Ultramicroscopy, 2006-05, Vol.106 (7), p.582-586

2006

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Sub-Poissonian shot noise of a high internal gain injection photon detector

Optics express, 2008-08, Vol.16 (17), p.12701-12706

2008

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Quilt Packaging: High-Density, High-Speed Interchip Communications

IEEE transactions on advanced packaging, 2007-11, Vol.30 (4), p.731-740

2007

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A photon detector with very high gain at low bias and at room temperature

Applied physics letters, 2007-10, Vol.91 (17), p.171112-171112-3

2007

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Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes

Microelectronic engineering, 2009-04, Vol.86 (4), p.521-523

2009

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College Students' Use of Smart Teaching Tools in China: Extending Unified Theory of Acceptance and Use of Technology 2 with Learning Value

2020 International Conference on Modern Education and Information Management (ICMEIM), 2020, p.842-847

2020

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Elevated-Temperature Annealing Effects on AlGaN/GaN Heterostructures

Journal of electronic materials, 2011-12, Vol.40 (12), p.2344-2347

2011

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Low resistance Mo/AI/Mo/Au ohmic contact scheme to InAIN/AIN/GaN heterostructure

Physica status solidi. A, Applications and materials science, 2011, Vol.208 (7), p.1538-1540

2011

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Elevated-Temperature Annealing Effects on AIGaN/GaN Heterostructures

Journal of electronic materials, 2011, Vol.40 (12), p.2344-2347

2011

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Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an [Formula Omitted] Dielectric Layer

IEEE electron device letters, 2009-09, Vol.30 (9), p.913

2009

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Electric field measurement for quantum-dot cellular automata clocking circuits

Impact of Molecular Subgroups on Prognosis and Survival Outcomes in Posterior Fossa Ependymomas: A Retrospective Study of 412 Cases

Low resistance Mo/Al/Mo/Au ohmic contact scheme to InAlN/AlN/GaN heterostructure

A quantitative method for dual-pass electrostatic force microscopy phase measurements

On the Source of Jitter in a Room-Temperature Nanoinjection Photon Detector at 1.55 μm

Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an Al2O3/SiNx Dielectric Layer

Electrical and microstructural properties of thermally annealed Ni/Au and Ni/Pt/Au Schottky contacts on AlGaN/GaN heterostructures

PLAs in Quantum-Dot Cellular Automata

A novel vision measurement system for health monitoring of tunnel structures

PD‐L1 regulates tumor proliferation and T‐cell function in NF2‐associated meningiomas

Effects of Weld Bead Arrangements on the Performance of V-shaped Asymmetric Curved Groove Welded Joints

Auditory brainstem implants for hearing rehabilitation in NF2-schwannomatosis: A systematic review and single-arm meta-analysis

On the Source of Jitter in a Room-Temperature Nanoinjection Photon Detector at 1.55 \mu \hbox

Multiple Kernel Learning Based Classification of Parkinson's Disease With Multi-Modal Transcranial Sonography

Fabrication of triangular nanochannels using the collapse of hydrogen silsesquioxane resists

Apparent height in tapping mode of electrostatic force microscopy

Sub-Poissonian shot noise of a high internal gain injection photon detector

Quilt Packaging: High-Density, High-Speed Interchip Communications

A photon detector with very high gain at low bias and at room temperature

Ultra-dense hydrogen silsesquioxane (HSQ) structures on thin silicon nitride membranes

College Students' Use of Smart Teaching Tools in China: Extending Unified Theory of Acceptance and Use of Technology 2 with Learning Value

Elevated-Temperature Annealing Effects on AlGaN/GaN Heterostructures

Low resistance Mo/AI/Mo/Au ohmic contact scheme to InAIN/AIN/GaN heterostructure

Elevated-Temperature Annealing Effects on AIGaN/GaN Heterostructures

Recessed 70-nm Gate-Length AlGaN/GaN HEMTs Fabricated Using an [Formula Omitted] Dielectric Layer

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