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Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors

Chinese physics B, 2022-02, Vol.31 (3), p.36103-487

2022

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Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate

Chinese physics B, 2022-06, Vol.31 (6), p.68501-809

2022

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Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate

Chinese physics B, 2021-05, Vol.30 (5), p.58501-783

2021

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Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes

Chinese physics B, 2022-05, Vol.31 (6), p.68101-771

2022

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Time-domain nature of group delay

Chinese physics B, 2015-10, Vol.24 (10), p.36-40

王建武冯正和

2015

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Performance improvement of magneto-acousto-electrical tomography for biological tissues with sinusoid-Barker coded excitation

Chinese physics B, 2018-09, Vol.27 (9), p.94302

2018

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Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress

Chinese physics B, 2021-07, Vol.30 (7), p.77305-550

2021

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Symbolic transfer entropy-based premature signal analysis

Chinese physics B, 2012, Vol.21 (1), p.535-538

王俊余正锋

2012

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The dynamic characteristics of harvesting energy from mechanical vibration via piezoelectric conversion

Chinese physics B, 2013-10, Vol.22 (10), p.354-361

樊康旗明正峰徐春辉晁锋波

2013

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A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

Chinese physics B, 2014-08, Vol.23 (8), p.487-494

2014

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Electrohydrodynamic direct-writing of conductor-insulator-conductor multi-layer interconnection

Chinese physics B, 2014-06, Vol.23 (6), p.401-406

郑高峰裴艳博王翔郑建毅孙道恒

2014

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Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress

Chinese physics B, 2015, Vol.24 (1), p.444-448

孙伟伟郑雪峰范爽王冲杜鸣张凯陈伟伟曹艳荣毛维马晓华张进成郝跃

2015

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High-power terahertz pulse sensor with overmoded structure

Chinese physics B, 2014-05, Vol.23 (5), p.634-638

王雪锋王建国王光强李爽熊正锋

2014

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Ferroelectric effect and equivalent polarization charge model of PbZr0.2Ti0.8O3 on AlGaN/GaN MIS-HEMT

中国物理B（英文版）, 2021-05, Vol.30 (5), p.678-683

2021

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Influence of the interaction volume on the kinetic energy resolution of a velocity map imaging spectrometer

Chinese physics B, 2016-03, Vol.25 (3), p.145-149

张鹏冯正鹏罗四强王哲

2016

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Saturation of biphoton generation near atomic resonance

Chinese physics B, 2012-11, Vol.21 (11), p.242-247

陈鹏钱军胡正峰王育竹

2012

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Recovery of PMOSFET NBTI under different conditions

Chinese physics B, 2015-09, Vol.24 (9), p.484-488

曹艳荣杨毅曹成何文龙郑雪峰马晓华郝跃

2015

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Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors

Chinese physics B, 2015-03, Vol.24 (3), p.332-335

张鹏赵胜雷侯斌王冲郑雪峰马晓华张进成郝跃

2015

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Transient responses of transparency in a far-off resonant atomic system

Chinese physics B, 2014-05, Vol.23 (5), p.292-295

胡正峰杜春光邓见辽王育竹

2014

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Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress

Chinese physics B, 2014-11, Vol.23 (11), p.496-501

曹艳荣何文龙曹成杨毅郑雪峰马晓华郝跃

2014

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Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

Chinese physics B, 2013-09, Vol.22 (9), p.574-578

张凯曹梦逸雷晓艺赵胜雷杨丽媛郑雪峰马晓华郝跃

2013

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Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node

Chinese physics B, 2021-01, Vol.30 (1), p.18502

2021

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Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

Chinese physics B, 2015-02, Vol.24 (2), p.376-381

郑雪峰范爽陈永和康迪张建坤王冲默江辉李亮马晓华张进成郝跃

2015

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Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET

Chinese physics B, 2013-04, Vol.22 (4), p.434-437

雷晓艺刘红侠张凯张月郑雪峰马晓华郝跃

2013

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Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates

Chinese physics B, 2016-01, Vol.25 (1), p.17303

2016

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Effect of heavy ion irradiation on the interface traps of AlGaN/GaN high electron mobility transistors

Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate

Vertical polarization-induced doping InN/InGaN heterojunction tunnel FET with hetero T-shaped gate

Effects of electrical stress on the characteristics and defect behaviors in GaN-based near-ultraviolet light emitting diodes

Time-domain nature of group delay

Performance improvement of magneto-acousto-electrical tomography for biological tissues with sinusoid-Barker coded excitation

Degradation of gate-recessed MOS-HEMTs and conventional HEMTs under DC electrical stress

Symbolic transfer entropy-based premature signal analysis

The dynamic characteristics of harvesting energy from mechanical vibration via piezoelectric conversion

A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

Electrohydrodynamic direct-writing of conductor-insulator-conductor multi-layer interconnection

Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress

High-power terahertz pulse sensor with overmoded structure

Ferroelectric effect and equivalent polarization charge model of PbZr0.2Ti0.8O3 on AlGaN/GaN MIS-HEMT

Influence of the interaction volume on the kinetic energy resolution of a velocity map imaging spectrometer

Saturation of biphoton generation near atomic resonance

Recovery of PMOSFET NBTI under different conditions

Improvement of the off-state breakdown voltage with field plate and low-density drain in AlGaN/GaN high-electron mobility transistors

Transient responses of transparency in a far-off resonant atomic system

Effect of gate length on the parameter degradation relations of PMOSFET under NBTI stress

Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

Novel CMOS image sensor pixel to improve charge transfer speed and efficiency by overlapping gate and temporary storage diffusing node

Transport mechanism of reverse surface leakage current in AlGaN/GaN high-electron mobility transistor with SiN passivation

Hot carrier degradation and a new lifetime prediction model in ultra-deep sub-micron pMOSFET

Reverse blocking characteristics and mechanisms in Schottky-drain AlGaN/GaN HEMT with a drain field plate and floating field plates

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