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Reconciliation of different gate-voltage dependencies of 1/f noise in n-MOS and p-MOS transistors

IEEE transactions on electron devices, 1994-11, Vol.41 (11), p.1946-1952

1994

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1/f noise and radiation effects in MOS devices

IEEE transactions on electron devices, 1994-11, Vol.41 (11), p.1953-1964

1994

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Physical basis for nondestructive tests of MOS radiation hardness

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1991-12, Vol.38 (6), p.1567-1577

1991

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Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistors

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (USA), 1989-12, Vol.36 (6), p.1946-1953

1989

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Correlation between preirradiation 1/ < e1 > f < /e1 > noise and postirradiation oxide-trapped charge in MOS transistors

IEEE transactions on nuclear science, 1989-12, Vol.36 (6), p.1946-1953

1989

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First year performance for the roof-mounted, 45-kW PV-array on Oberlin College's Adam Joseph Lewis Center

Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002, 2002, p.1691-1694

2002

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Coupled Inductor Characterization for a High Performance Interleaved Boost Converter

IEEE transactions on magnetics, 2009-10, Vol.45 (10), p.4812-4815

2009

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Design and Performance Evaluation of a 200 °C Interleaved Boost Converter

IEEE transactions on power electronics, 2013-04, Vol.28 (4), p.1691-1699

2013

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Room temperature continuous wave lasing in nanopillar photonic crystal cavities

2012 Conference on Lasers and Electro-Optics (CLEO), 2012, p.1-2

2012

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High temperature operation of a dc-dc power converter utilizing SiC power devices

Twentieth Annual IEEE Applied Power Electronics Conference and Exposition, 2005. APEC 2005, 2005, Vol.1, p.315-321 Vol. 1

2005

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Gate oxide reliability of 4H-SiC MOS devices

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.592-593

2005

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Low-threshold room-temperature lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars

69th Device Research Conference, 2011, p.1-2

2011

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Performance analysis of a multi-mode interleaved boost converter

2009 IEEE Energy Conversion Congress and Exposition, 2009, p.2176-2183

2009

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Sodium diffusion, selenization, and microstructural effects associated with various molybdenum back contact layers for CIS-based solar cells

Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy Conversion - WCPEC (A Joint Conference of PVSC, PVSEC and PSEC), 1994, Vol.1, p.164-167 vol.1

1994

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High Speed Switching Devices in 4H-SiC - Performance and Reliability

2005 International Semiconductor Device Research Symposium, 2005, p.162-163

2005

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Unscrambling of Gamma-Ray Scintillation Spectrometer Pulse-Height Distributions

I.R.E. transactions on nuclear science, 1958-12, Vol.5 (3), p.156-158

1958

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Reconciliation of different gate-voltage dependencies of 1/f noise in n-MOS and p-MOS transistors

1/f noise and radiation effects in MOS devices

Physical basis for nondestructive tests of MOS radiation hardness

Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistors

Correlation between preirradiation 1/ < e1 > f < /e1 > noise and postirradiation oxide-trapped charge in MOS transistors

First year performance for the roof-mounted, 45-kW PV-array on Oberlin College's Adam Joseph Lewis Center

Coupled Inductor Characterization for a High Performance Interleaved Boost Converter

Design and Performance Evaluation of a 200 °C Interleaved Boost Converter

Room temperature continuous wave lasing in nanopillar photonic crystal cavities

High temperature operation of a dc-dc power converter utilizing SiC power devices

Gate oxide reliability of 4H-SiC MOS devices

Low-threshold room-temperature lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars

Performance analysis of a multi-mode interleaved boost converter

Sodium diffusion, selenization, and microstructural effects associated with various molybdenum back contact layers for CIS-based solar cells

High Speed Switching Devices in 4H-SiC - Performance and Reliability

Unscrambling of Gamma-Ray Scintillation Spectrometer Pulse-Height Distributions

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