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Impact of failure criteria on the reliability prediction of CMOS devices with ultrathin gate oxides based on voltage ramp stress

IEEE electron device letters, 2006-07, Vol.27 (7), p.609-611

2006

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Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides

Microelectronics and reliability, 2006-09, Vol.46 (9), p.1603-1607

2006

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Highly accurate product-level aging monitoring in 40nm CMOS

2010 Symposium on VLSI Technology, 2010, p.27-28

2010

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Soft breakdown and hard breakdown in ultra-thin oxides

Microelectronics and reliability, 2001-04, Vol.41 (4), p.543-551

2001

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Practical aspects of reliability analysis for IC designs

2006 43rd ACM/IEEE Design Automation Conference, 2006, p.193-198

2006

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Change of acceleration behavior of time-dependent dielectric breakdown by the BEOL process: indications for hydrogen induced transition in dominant degradation mechanism

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.388-397

2005

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Influence of gate oxide breakdown on MOSFET device operation

Microelectronics and reliability, 2000-01, Vol.40 (1), p.37-47

2000

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The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices

Microelectronics and reliability, 2001-07, Vol.41 (7), p.973-975

2001

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Voltage acceleration of time-dependent breakdown of ultra-thin gate dielectrics

Microelectronics and reliability, 2005-12, Vol.45 (12), p.1835-1841

2005

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Reisebüro-Management: Gestaltung der Vertriebsstrukturen im Tourismus

Walter Freyer, Wilhelm Pompl / Walter Freyer, Wilhelm Pompl

Second Edition., 2011

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Modeling of substrate related extrinsic oxide failure distributions

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), 2002, p.393-403

2002

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Reliability aspects of gate oxide under ESD pulse stress

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2009, Vol.49 (12), p.6A.1-1-6A.1-10

2009

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Lifetime Prediction for CMOS Devices with Ultra Thin Gate Oxides Based on Progressive Breakdown

2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.217-220

2007

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Ozone-enhanced molecular beam deposition of nickel oxide (NiO) for sensor applications

Thin solid films, 1997-11, Vol.310 (1), p.19-23

1997

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Influence of soft breakdown on NMOSFET device characteristics

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296), 1999, p.82-87

1999

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Predicting Failure Distributions of SRAM Arrays by using Extreme Value Statistic, Bit Cell Simulation, and Machine Learning

IEEE transactions on device and materials reliability, 2023-09, Vol.23 (3), p.1-1

2023

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65nm cmos technology for low power applications

IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest, 2005, p.64-67

2005

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TDDB robustness of highly dense 65NM BEOL vertical natural capacitor with competitive area capacitance for RF and mixed-signal applications

2008 IEEE International Reliability Physics Symposium, 2008, p.126-131

2008

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Failure distributions of successive dielectric breakdown events

IEEE transactions on device and materials reliability, 2004-06, Vol.4 (2), p.263-267

2004

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Contribution of interface traps to valence band electron tunneling in PMOS devices

30th European Solid-State Device Research Conference, 2000, p.292-295

2000

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Gate Dielectric Integrity along the Road Map of CMOS Scaling including Multi-Gate Fet, TiN Metal Gate, and HfSiON High-k Gate Dielectric

2006 IEEE International Reliability Physics Symposium Proceedings, 2006, p.655-656

2006

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Impact of Gate Oxide Thickness Scaling on Hot-Carrier Degradation in Deep-sub-micron nMOSFETs

30th European Solid-State Device Research Conference, 2000, p.132-135

2000

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Ultra-thin gate oxide reliability in the ESD time domain

2006 Electrical Overstress/Electrostatic Discharge Symposium, 2006, p.285-294

2006

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N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]

Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC, 2004, p.15-16 vol.1

2004

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Investigation of ultra-thin gate oxide reliability behavior by separate characterization of soft breakdown and hard breakdown

2000 IEEE International Reliability Physics Symposium Proceedings. 38th Annual (Cat. No.00CH37059), 2000, p.40-47

2000

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Impact of failure criteria on the reliability prediction of CMOS devices with ultrathin gate oxides based on voltage ramp stress

Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides

Highly accurate product-level aging monitoring in 40nm CMOS

Soft breakdown and hard breakdown in ultra-thin oxides

Practical aspects of reliability analysis for IC designs

Change of acceleration behavior of time-dependent dielectric breakdown by the BEOL process: indications for hydrogen induced transition in dominant degradation mechanism

Influence of gate oxide breakdown on MOSFET device operation

The influence of p-polysilicon gate doping on the dielectric breakdown of PMOS devices

Voltage acceleration of time-dependent breakdown of ultra-thin gate dielectrics

Reisebüro-Management: Gestaltung der Vertriebsstrukturen im Tourismus

Modeling of substrate related extrinsic oxide failure distributions

Reliability aspects of gate oxide under ESD pulse stress

Lifetime Prediction for CMOS Devices with Ultra Thin Gate Oxides Based on Progressive Breakdown

Ozone-enhanced molecular beam deposition of nickel oxide (NiO) for sensor applications

Influence of soft breakdown on NMOSFET device characteristics

Predicting Failure Distributions of SRAM Arrays by using Extreme Value Statistic, Bit Cell Simulation, and Machine Learning

65nm cmos technology for low power applications

TDDB robustness of highly dense 65NM BEOL vertical natural capacitor with competitive area capacitance for RF and mixed-signal applications

Failure distributions of successive dielectric breakdown events

Contribution of interface traps to valence band electron tunneling in PMOS devices

Gate Dielectric Integrity along the Road Map of CMOS Scaling including Multi-Gate Fet, TiN Metal Gate, and HfSiON High-k Gate Dielectric

Impact of Gate Oxide Thickness Scaling on Hot-Carrier Degradation in Deep-sub-micron nMOSFETs

Ultra-thin gate oxide reliability in the ESD time domain

N incorporation into ALD HfO/sub 2/ gate dielectric using ion implantation [MOSFET application]

Investigation of ultra-thin gate oxide reliability behavior by separate characterization of soft breakdown and hard breakdown

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