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High-gain and low-threshold InAs quantum-dot lasers on InP

Applied physics letters, 2005-12, Vol.87 (24), p.243107-243107-3

2005

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Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster

Journal of crystal growth, 2013-10, Vol.380, p.157-162

2013

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Transparent optical packet switching: the European ACTS KEOPS project approach

Journal of lightwave technology, 1998-12, Vol.16 (12), p.2117-2134

1998

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Low Threshold 1550-nm Emitting QD Optically Pumped VCSEL

IEEE photonics technology letters, 2021-01, Vol.33 (2), p.69-72

2021

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Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

Journal of applied physics, 2013-03, Vol.113 (12)

2013

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The Vesta gravity field, spin pole and rotation period, landmark positions, and ephemeris from the Dawn tracking and optical data

Icarus (New York, N.Y. 1962), 2014-09, Vol.240, p.103-117

2014

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Abrupt GaP/Si hetero-interface using bistepped Si buffer

Applied physics letters, 2015-11, Vol.107 (19)

2015

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Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates

Journal of crystal growth, 2005-01, Vol.273 (3), p.357-362

2005

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Experimental and theoretical studies of electronic energy levels in InAs quantum dots grown on (001) and (113)B InP substrates

Journal of physics. Condensed matter, 2002-12, Vol.14 (47), p.12301-12309

2002

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MBE growth and doping of AlGaP

Journal of crystal growth, 2017-05, Vol.466, p.6-15

2017

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Thermal measurements of dark and bright surface features on Vesta as derived from Dawn/VIR

Icarus (New York, N.Y. 1962), 2014-09, Vol.240, p.36-57

2014

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Constraints on Vesta’s interior structure using gravity and shape models from the Dawn mission

Icarus (New York, N.Y. 1962), 2014-09, Vol.240, p.146-160

2014

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23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers

Optics express, 2013-11, Vol.21 (23), p.29000-29005

2013

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Gravity field expansion in ellipsoidal harmonic and polyhedral internal representations applied to Vesta

Icarus (New York, N.Y. 1962), 2014-09, Vol.240, p.118-132

2014

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Composition and mineralogy of dark material units on Vesta

Icarus (New York, N.Y. 1962), 2014-09, Vol.240, p.58-72

2014

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Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells

Journal of applied physics, 2003-08, Vol.94 (4), p.2355-2359

2003

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Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

Applied physics letters, 2001-03, Vol.78 (12), p.1751-1753

2001

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The contamination of the surface of Vesta by impacts and the delivery of the dark material

Icarus (New York, N.Y. 1962), 2014-09, Vol.240, p.86-102

2014

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The geological nature of dark material on Vesta and implications for the subsurface structure

Icarus (New York, N.Y. 1962), 2014-09, Vol.240, p.3-19

2014

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Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP

Physical review. B, Condensed matter, 1998-10, Vol.58 (16), p.10700-10704

1998

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Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs deposited

Journal of crystal growth, 2006-08, Vol.293 (2), p.263-268

2006

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Spectral analysis of the bright materials on the asteroid Vesta

Icarus (New York, N.Y. 1962), 2014-09, Vol.240, p.73-85

2014

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Efficient early global relaxation of asteroid Vesta

Icarus (New York, N.Y. 1962), 2014-09, Vol.240, p.133-145

2014

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Room temperature laser emission of 1.5 μm from InAs/InP(311)B quantum dots

Semiconductor science and technology, 2002-02, Vol.17 (2), p.L5-L7

2002

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Design and fabrication of GaInAsP/InP VCSEL with two a-Si/a-SiNx Bragg reflectors

Optical and quantum electronics, 2006-03, Vol.38 (4-6), p.281-291

2006

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High-gain and low-threshold InAs quantum-dot lasers on InP

Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth cluster

Transparent optical packet switching: the European ACTS KEOPS project approach

Low Threshold 1550-nm Emitting QD Optically Pumped VCSEL

Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells

The Vesta gravity field, spin pole and rotation period, landmark positions, and ephemeris from the Dawn tracking and optical data

Abrupt GaP/Si hetero-interface using bistepped Si buffer

Emission wavelength control of InAs quantum dots in a GaInAsP matrix grown on InP(3 1 1)B substrates

Experimental and theoretical studies of electronic energy levels in InAs quantum dots grown on (001) and (113)B InP substrates

MBE growth and doping of AlGaP

Thermal measurements of dark and bright surface features on Vesta as derived from Dawn/VIR

Constraints on Vesta’s interior structure using gravity and shape models from the Dawn mission

23 and 39 GHz low phase noise monosection InAs/InP (113)B quantum dots mode-locked lasers

Gravity field expansion in ellipsoidal harmonic and polyhedral internal representations applied to Vesta

Composition and mineralogy of dark material units on Vesta

Nonlinear absorption temporal dynamics of Fe-doped GaInAs/InP multiple quantum wells

Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm

The contamination of the surface of Vesta by impacts and the delivery of the dark material

The geological nature of dark material on Vesta and implications for the subsurface structure

Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP

Self-assembled InAs quantum dots grown on InP (3 1 1)B substrates: Role of buffer layer and amount of InAs deposited

Spectral analysis of the bright materials on the asteroid Vesta

Efficient early global relaxation of asteroid Vesta

Room temperature laser emission of 1.5 μm from InAs/InP(311)B quantum dots

Design and fabrication of GaInAsP/InP VCSEL with two a-Si/a-SiNx Bragg reflectors

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