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Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

IEEE electron device letters, 2014-03, Vol.35 (3), p.327-329

2014

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IEEE_Xplore

OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown

IEEE transactions on electron devices, 2014-06, Vol.61 (6), p.1987-1992

2014

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IEEE_Xplore

Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

IEEE electron device letters, 2014-01, Vol.35 (1), p.27-29

2014

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IEEE_Xplore

Autocorrelation Analysis as a Technique to Study Physical Mechanisms of MOSFET Low-Frequency Noise

IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2919-2926

2017

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IEEE_Xplore

RF Circuit Linearity Optimization Using a General Weak Nonlinearity Model

IEEE transactions on circuits and systems. I, Regular papers, 2012-10, Vol.59 (10), p.2340-2353

2012

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IEEE_Xplore

An easy-to-use mismatch model for the MOS transistor

IEEE journal of solid-state circuits, 2002-08, Vol.37 (8), p.1056-1064

2002

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IEEE_Xplore

The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications

IEEE journal of solid-state circuits, 2009-05, Vol.44 (5), p.1415-1424

2009

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IEEE_Xplore

Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress

IEEE transactions on electron devices, 2015-08, Vol.62 (8), p.2549-2554

2015

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IEEE_Xplore

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4044-4049

2017

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IEEE_Xplore

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.1197-1202

2017

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IEEE_Xplore

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN x Deposition

IEEE transactions on electron devices, 2017-10, Vol.64 (10), p.4044-4049

2017

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Noise and Nonlinearity Modeling of Active Mixers for Fast and Accurate Estimation

IEEE transactions on circuits and systems. I, Regular papers, 2011-02, Vol.58 (2), p.276-289

2011

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IEEE_Xplore

Ring-oscillator test-structures for sub-0.1% accuracy wafer-level characterization of active- and standby current consumption, variability, and fast aging of oscillation frequencies

2017 International Conference of Microelectronic Test Structures (ICMTS), 2017, p.1-6

2017

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IEEE_Xplore

Investigation of surface charges and traps in gallium nitride/aluminium gallium nitride/gallium nitride high-voltage transistors via measurements and technology computer-aided design simulations of transfer characteristics of metal–insulator–semiconductor field-effect transistors and high-electron-mobility transistors

IET power electronics, 2015-12, Vol.8 (12), p.2322-2328

2015

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The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET - Experiment and TCAD simulations

2014 44th European Solid State Device Research Conference (ESSDERC), 2014, p.329-332

2014

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IEEE_Xplore

A variability-based analysis technique revealing physical mechanisms of MOSFET low-frequency noise

2017 International Conference of Microelectronic Test Structures (ICMTS), 2017, p.1-5

2017

Link zum Volltext
IEEE_Xplore

Automatic model type selection with heterogeneous evolution: An application to RF circuit block modeling

2008 IEEE Congress on Evolutionary Computation (IEEE World Congress on Computational Intelligence), 2008, p.989-996

2008

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IEEE_Xplore

Modelling 2DEG charges in AlGaN/GaN heterostructures

CAS 2012 (International Semiconductor Conference), 2012, Vol.2, p.363-366

2012

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A general weak nonlinearity model for LNAs

2008 IEEE Custom Integrated Circuits Conference, 2008, p.221-224

2008

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IEEE_Xplore

Matching properties of deep sub-micron MOS transistors

Croon, Jeroen Antoon

2004

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The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling

2014 IEEE International Electron Devices Meeting, 2014, p.17.1.1-17.1.4

2014

Link zum Volltext
IEEE_Xplore

A yield-aware modeling methodology for nano-scaled SRAM designs

2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005, 2005, p.33-36

2005

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IEEE_Xplore

An Overview on Statistical Modeling of Random Telegraph Noise in the Frequency Domain

Noise in Nanoscale Semiconductor Devices, 2020, p.495-516

2020

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Surrogate Modeling of RF Circuit Blocks

Progress in Industrial Mathematics at ECMI 2008, p.447-452

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Surrogate Modeling of Low Noise Amplifiers Based on Transistor Level Simulations

Scientific Computing in Electrical Engineering SCEE 2008, p.225-232

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Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

OFF-State Degradation of AlGaN/GaN Power HEMTs: Experimental Demonstration of Time-Dependent Drain-Source Breakdown

Impact of Donor Traps on the 2DEG and Electrical Behavior of AlGaN/GaN MISFETs

Autocorrelation Analysis as a Technique to Study Physical Mechanisms of MOSFET Low-Frequency Noise

RF Circuit Linearity Optimization Using a General Weak Nonlinearity Model

An easy-to-use mismatch model for the MOS transistor

The New CMC Standard Compact MOS Model PSP: Advantages for RF Applications

Extensive Investigation of Time-Dependent Breakdown of GaN-HEMTs Submitted to OFF-State Stress

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition

Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiN x Deposition

Noise and Nonlinearity Modeling of Active Mixers for Fast and Accurate Estimation

Ring-oscillator test-structures for sub-0.1% accuracy wafer-level characterization of active- and standby current consumption, variability, and fast aging of oscillation frequencies

The effect of the surface fixed charge and donor traps on the C(V) and transfer characteristics of a GaN MISFET - Experiment and TCAD simulations

A variability-based analysis technique revealing physical mechanisms of MOSFET low-frequency noise

Automatic model type selection with heterogeneous evolution: An application to RF circuit block modeling

Modelling 2DEG charges in AlGaN/GaN heterostructures

A general weak nonlinearity model for LNAs

Matching properties of deep sub-micron MOS transistors

The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling

A yield-aware modeling methodology for nano-scaled SRAM designs

An Overview on Statistical Modeling of Random Telegraph Noise in the Frequency Domain

Surrogate Modeling of RF Circuit Blocks

Surrogate Modeling of Low Noise Amplifiers Based on Transistor Level Simulations

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