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Modifiable Lifestyle Factors and Risk for Incident Endometriosis

Paediatric and perinatal epidemiology, 2018-10, Vol.33 (1), p.19-25

2018

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Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Applied physics letters, 2017-12, Vol.111 (24)

2017

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Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

Materials, 2016-12, Vol.9 (12), p.1007

2016

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Relationship between grain filling duration and leaf senescence of temperate rice under high temperature

Field crops research, 2011-06, Vol.122 (3), p.207-213

2011

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Road Traffic Monitoring from UAV Images Using Deep Learning Networks

Remote sensing (Basel, Switzerland), 2021-10, Vol.13 (20), p.4027

2021

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Analyzing Factors Affecting Micro-Mobility and Predicting Micro-Mobility Demand Using Ensemble Voting Regressor

Electronics (Basel), 2023-11, Vol.12 (21), p.4410

2023

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Abstract 1142: A novel and potent EZH1/2 dual inhibitor, HM97662, demonstrates antitumor activity in malignant tumors

Cancer research (Chicago, Ill.), 2021-07, Vol.81 (13_Supplement), p.1142-1142

2021

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Design and synthesis of 4th generation EGFR inhibitors against human triple (Del19/T790M/C797S) mutation

European journal of medicinal chemistry, 2023-12, Vol.261, p.115840-115840, Article 115840

2023

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Top-down fabrication of high-uniformity nanodiamonds by self-assembled block copolymer masks

Scientific reports, 2019-05, Vol.9 (1), p.6914-6914, Article 6914

2019

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High Accuracy Localization Scheme Using 1-Bit Side Information: Achievability from a GDoP Perspective

Electronics (Basel), 2024-04, Vol.13 (8), p.1574

2024

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Osteoporosis Failure of Aluminum Current Collector Induced Crosstalk Degradation at the Imide-Type Lithium Salt Comprised Practical-Level Lithium-Ion Batteries

Journal of the Electrochemical Society, 2024-06, Vol.171 (6), p.60536

2024

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Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films

The Journal of chemical physics, 2017-02, Vol.146 (5), p.052821-052821

2017

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Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane

ACS applied materials & interfaces, 2018-04, Vol.10 (16), p.14116-14123

2018

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Prognostic Potential of Cyclin D1 Expression in Colorectal Cancer

Journal of clinical medicine, 2023-01, Vol.12 (2), p.572

2023

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A Novel and Potent EZH1/2 Dual Inhibitor HM97594 for the Treatment of Hematological Malignancies

Blood, 2019-11, Vol.134 (Supplement_1), p.4648-4648

2019

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Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

ACS applied materials & interfaces, 2018-12, Vol.10 (51), p.44825-44833

2018

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Remember Kabul? Reputation, strategic contexts, and American credibility after the Afghanistan withdrawal

Contemporary security policy, 2024-04, Vol.45 (2), p.265-297

2024

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Abstract 1257: HM43239, a novel FLT3 inhibitor, has the potential to inhibit mutations resistant to FLT3 inhibitors

Cancer research (Chicago, Ill.), 2021-07, Vol.81 (13_Supplement), p.1257-1257

2021

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Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization

Japanese Journal of Applied Physics, 2016-06, Vol.55 (8S2)

2016

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Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD

IEEE electron device letters, 2018-08, Vol.39 (8), p.1195-1198

2018

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Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

Applied physics letters, 2017-08, Vol.111 (8)

2017

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High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-10, Vol.8 (37), p.1333-1339

2020

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Comparative study of trimethylaluminum and tetrakis(dimethylamido)titanium pretreatments on Pd/Al2O3/p-GaSb capacitors

Journal of physics. D, Applied physics, 2017-10, Vol.50 (41)

2017

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Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100°C) by Al2O3 incorporation

Applied surface science, 2016-05, Vol.371, p.360-364

2016

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Expression of EEF1A1 Is Associated with Prognosis of Patients with Colon Adenocarcinoma

Journal of clinical medicine, 2019-11, Vol.8 (11), p.1903

2019

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Modifiable Lifestyle Factors and Risk for Incident Endometriosis

Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget

Atomic Layer Deposition of Silicon Nitride Thin Films: A Review of Recent Progress, Challenges, and Outlooks

Relationship between grain filling duration and leaf senescence of temperate rice under high temperature

Road Traffic Monitoring from UAV Images Using Deep Learning Networks

Analyzing Factors Affecting Micro-Mobility and Predicting Micro-Mobility Demand Using Ensemble Voting Regressor

Abstract 1142: A novel and potent EZH1/2 dual inhibitor, HM97662, demonstrates antitumor activity in malignant tumors

Design and synthesis of 4th generation EGFR inhibitors against human triple (Del19/T790M/C797S) mutation

Top-down fabrication of high-uniformity nanodiamonds by self-assembled block copolymer masks

High Accuracy Localization Scheme Using 1-Bit Side Information: Achievability from a GDoP Perspective

Osteoporosis Failure of Aluminum Current Collector Induced Crosstalk Degradation at the Imide-Type Lithium Salt Comprised Practical-Level Lithium-Ion Batteries

Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films

Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane

Prognostic Potential of Cyclin D1 Expression in Colorectal Cancer

A Novel and Potent EZH1/2 Dual Inhibitor HM97594 for the Treatment of Hematological Malignancies

Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper

Remember Kabul? Reputation, strategic contexts, and American credibility after the Afghanistan withdrawal

Abstract 1257: HM43239, a novel FLT3 inhibitor, has the potential to inhibit mutations resistant to FLT3 inhibitors

Formation of a ZnO/ZnS interface passivation layer on (NH4)2S treated In0.53Ga0.47As: Electrical and in-situ X-ray photoelectron spectroscopy characterization

Robust SiNx/GaN MIS-HEMTs With Crystalline Interfacial Layer Using Hollow Cathode PEALD

Low temperature (100 °C) atomic layer deposited-ZrO2 for recessed gate GaN HEMTs on Si

High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor

Comparative study of trimethylaluminum and tetrakis(dimethylamido)titanium pretreatments on Pd/Al2O3/p-GaSb capacitors

Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100°C) by Al2O3 incorporation

Expression of EEF1A1 Is Associated with Prognosis of Patients with Colon Adenocarcinoma

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