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Stable hole doping of graphene for low electrical resistance and high optical transparency

Nanotechnology, 2011-10, Vol.22 (42), p.425701-1-6

2011

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Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

Physical review. X, 2012, Vol.2 (1), p.011002, Article 011002

2012

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Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping

Carbon (New York), 2011-05, Vol.49 (6), p.2033-2038

2011

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Current transport across the pentacene/CVD-grown graphene interface for diode applications

Journal of physics. Condensed matter, 2012-06, Vol.24 (25), p.255802-255802

2012

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Graphene/GaN Schottky diodes: Stability at elevated temperatures

Applied physics letters, 2011-09, Vol.99 (10), p.102102-102102-3

2011

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Patterns of morphological and genetic variation in the endemic Malagasy bat Miniopterus gleni (Chiroptera: Miniopteridae), with the description of a new species, M. griffithsi

Journal of zoological systematics and evolutionary research, 2010-02, Vol.48 (1), p.75-86

2010

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Drawing graphene nanoribbons on SiC by ion implantation

Applied physics letters, 2012-02, Vol.100 (7), p.073501-073501-3

2012

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Ion implantation damage and annealing in germanium

Journal of applied physics, 1983-05, Vol.54 (5), p.2295-2301

1983

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Ion beam handbook for material analysis

1, 1977

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Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon

Journal of applied physics, 1980-01, Vol.51 (1), p.738-749

1980

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Superconductivity Applications

Science (American Association for the Advancement of Science), 1989-11, Vol.246 (4931), p.740-740

Appleton, Bill R.

1989

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Characterization of damage in ion implanted Ge

Applied physics letters, 1982-10, Vol.41 (8), p.711-712

1982

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Heteroepitaxy of GaAs on Si and Ge using alternating, low-energy ion beams

Applied physics letters, 1989-04, Vol.54 (15), p.1439-1441

1989

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Ion-beam and laser mixing of nickel overlayers on silicon carbide

Journal of applied physics, 1984-09, Vol.56 (6), p.1577-1582

1984

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Multi-Species Focused Ion Beam Processing for III-V Semiconductor Materials

Microscopy and microanalysis, 2012-07, Vol.18 (S2), p.616-617

2012

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Low-temperature epitaxy of Si and Ge by direct ion beam deposition

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1987-07, Vol.5 (4), p.2135-2139

1987

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Oxygen distribution in sputtered Nb-Ge films

Applied physics letters, 1976-02, Vol.28 (4), p.237-239

1976

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The material state of ion-implanted Cr in GaAs

Journal of applied physics, 1982-08, Vol.53 (8), p.5621-5629

1982

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Characterization of ion implantation through thin Ti metal layers on Si

Materials letters, 1987-08, Vol.5 (9), p.315-321

1987

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Redistribution of dopants in ion-implanted silicon by pulsed-laser annealing

Applied physics letters, 1978-10, Vol.33 (7), p.662-664

1978

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Unidirectional contraction in boron-implanted laser-annealed silicon

Applied physics letters, 1978-06, Vol.32 (12), p.801-803

1978

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Surface modification of solids

Journal of materials for energy systems, 1984-12, Vol.6 (3), p.200-211

APPLETON, B. R

1984

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Excimer laser mixing of nickel overlayers on silicon carbide

Materials letters, 1985-01, Vol.3 (7), p.261-264

1985

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Impurity segregation by pulsed laser irradiation

Journal of applied physics, 1979-04, Vol.50 (4), p.2967-2969

1979

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Solid‐phase‐epitaxial growth and formation of metastable alloys in ion implanted silicon

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1983-10, Vol.1 (4), p.871-887

1983

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Stable hole doping of graphene for low electrical resistance and high optical transparency

Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor-Based Diodes

Tuning Schottky diodes at the many-layer-graphene/semiconductor interface by doping

Current transport across the pentacene/CVD-grown graphene interface for diode applications

Graphene/GaN Schottky diodes: Stability at elevated temperatures

Patterns of morphological and genetic variation in the endemic Malagasy bat Miniopterus gleni (Chiroptera: Miniopteridae), with the description of a new species, M. griffithsi

Drawing graphene nanoribbons on SiC by ion implantation

Ion implantation damage and annealing in germanium

Ion beam handbook for material analysis

Supersaturated substitutional alloys formed by ion implantation and pulsed laser annealing of group-III and group-V dopants in silicon

Superconductivity Applications

Characterization of damage in ion implanted Ge

Heteroepitaxy of GaAs on Si and Ge using alternating, low-energy ion beams

Ion-beam and laser mixing of nickel overlayers on silicon carbide

Multi-Species Focused Ion Beam Processing for III-V Semiconductor Materials

Low-temperature epitaxy of Si and Ge by direct ion beam deposition

Oxygen distribution in sputtered Nb-Ge films

The material state of ion-implanted Cr in GaAs

Characterization of ion implantation through thin Ti metal layers on Si

Redistribution of dopants in ion-implanted silicon by pulsed-laser annealing

Unidirectional contraction in boron-implanted laser-annealed silicon

Surface modification of solids

Excimer laser mixing of nickel overlayers on silicon carbide

Impurity segregation by pulsed laser irradiation

Solid‐phase‐epitaxial growth and formation of metastable alloys in ion implanted silicon

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