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Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells

Applied physics letters, 2018-12, Vol.113 (25), p.251104-1 - 251104-5

2018

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GdWN3 is a nitride perovskite

Applied physics letters, 2024-09, Vol.125 (11)

2024

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A fiber-coupled quantum-dot on a photonic tip

Applied physics letters, 2016-01, Vol.108 (1)

2016

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A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells

Applied physics letters, 2022-04, Vol.120 (17)

2022

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High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers

Applied physics letters, 2014-09, Vol.105 (11), p.111118

2014

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Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120, 171103 (2022)]

Applied physics letters, 2022-05, Vol.120 (19)

2022

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Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters

Applied physics letters, 2023-06, Vol.122 (24)

2023

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Volume coil based on hybridized resonators for magnetic resonance imaging

Applied physics letters, 2016-01, Vol.108 (2)

2016

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Terahertz intersubband absorption in GaN/AlGaN step quantum wells

Applied physics letters, 2010-11, Vol.97 (19), p.191101-191101-3

2010

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Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system

Applied physics letters, 2017-03, Vol.110 (13)

2017

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Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates

Applied physics letters, 2021-02, Vol.118 (6)

2021

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Midinfrared intersubband absorption in lattice-matched AlInN∕GaN multiple quantum wells

Applied physics letters, 2005-09, Vol.87 (11)

2005

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Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ=19 μ m) with metal-metal resonators

Applied physics letters, 2014-01, Vol.104 (2), p.21106

2014

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Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120 , 171103 (2022)]

Applied physics letters, 2022-05, Vol.120 (19)

2022

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Metal oxide semiconductor structure using oxygen-terminated diamond

Applied physics letters, 2013-06, Vol.102 (24)

2013

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Intraband absorption of doped GaN ∕ AlN quantum dots at telecommunication wavelengths

Applied physics letters, 2005-09, Vol.87 (10), p.101912-101912-3

2005

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Short-wave infrared (λ = 3 μm) intersubband polaritons inthe GaN/AlN system

Applied physics letters, 2017-03, Vol.110 (13)

2017

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Dual wavelength emission from a terahertz quantum cascade laser

Applied physics letters, 2010-02, Vol.96 (5), p.051120-051120-3

2010

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Contact-less phonon detection with massive cryogenic absorbers

Applied physics letters, 2019-11, Vol.115 (22)

2019

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Highly strained AlAs-type interfaces in InAs/AlSb heterostructures

Applied physics letters, 2016-05, Vol.108 (21)

2016

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Broad gain in a bound-to-continuum quantum cascade laser with heterogeneous active region

Applied physics letters, 2011-12, Vol.99 (24), p.241108-241108-3

2011

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Abrupt GaP/Si hetero-interface using bistepped Si buffer

Applied physics letters, 2015-11, Vol.107 (19)

2015

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High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm

Applied physics letters, 2008-11, Vol.93 (19)

2008

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Elastic strains at interfaces in InAs/AlSb multilayer structures for quantum cascade lasers

Applied physics letters, 2014-01, Vol.104 (3), p.31907

2014

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Long-wavelength (≈15.5 μm) unipolar semiconductor laser in GaAs quantum wells

Applied physics letters, 1997-12, Vol.71 (25), p.3619-3621

1997

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Short infrared wavelength quantum cascade detectors based on m-plane ZnO/ZnMgO quantum wells

GdWN3 is a nitride perovskite

A fiber-coupled quantum-dot on a photonic tip

A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells

High temperature, single mode, long infrared (λ = 17.8 μm) InAs-based quantum cascade lasers

Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120, 171103 (2022)]

Theoretical study of the impact of alloy disorder on carrier transport and recombination processes in deep UV (Al,Ga)N light emitters

Volume coil based on hybridized resonators for magnetic resonance imaging

Terahertz intersubband absorption in GaN/AlGaN step quantum wells

Short-wave infrared (λ = 3 μm) intersubband polaritons in the GaN/AlN system

Dislocation density reduction using overgrowth on hole arrays made in heteroepitaxial diamond substrates

Midinfrared intersubband absorption in lattice-matched AlInN∕GaN multiple quantum wells

Long-infrared InAs-based quantum cascade lasers operating at 291 K (λ=19 μ m) with metal-metal resonators

Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120 , 171103 (2022)]

Metal oxide semiconductor structure using oxygen-terminated diamond

Intraband absorption of doped GaN ∕ AlN quantum dots at telecommunication wavelengths

Short-wave infrared (λ = 3 μm) intersubband polaritons inthe GaN/AlN system

Dual wavelength emission from a terahertz quantum cascade laser

Contact-less phonon detection with massive cryogenic absorbers

Highly strained AlAs-type interfaces in InAs/AlSb heterostructures

Broad gain in a bound-to-continuum quantum cascade laser with heterogeneous active region

Abrupt GaP/Si hetero-interface using bistepped Si buffer

High-speed operation of GaN/AlGaN quantum cascade detectors at λ≈1.55 μm

Elastic strains at interfaces in InAs/AlSb multilayer structures for quantum cascade lasers

Long-wavelength (≈15.5 μm) unipolar semiconductor laser in GaAs quantum wells

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