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Analytic solutions to the central-spin problem for nitrogen-vacancy centers in diamond

Physical review. B, Condensed matter and materials physics, 2014-08, Vol.90 (7), Article 075201

2014

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Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon

Physical review. B, Condensed matter and materials physics, 2009-08, Vol.80 (8), Article 081307

2009

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Spatial adiabatic passage in a realistic triple well structure

Physical review. B, Condensed matter and materials physics, 2008-06, Vol.77 (23), Article 235418

2008

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On the creation of near-surface nitrogen-vacancy centre ensembles by implantation of type Ib diamond

Journal of materials research, 2023-11, Vol.38 (22), p.4848-4857

2023

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Two-dimensional architectures for donor-based quantum computing

Physical review. B, Condensed matter and materials physics, 2006-07, Vol.74 (4), Article 045311

2006

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Charge-based quantum computing using single donors in semiconductors

Physical review. B, Condensed matter and materials physics, 2004-03, Vol.69 (11), Article 113301

2004

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Electronic properties of multiple adjacent δ -doped Si:P layers: The approach to monolayer confinement

Physical review. B, Condensed matter and materials physics, 2012-10, Vol.86 (16), Article 165123

2012

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Orbital Stark effect and quantum confinement transition of donors in silicon

Physical review. B, Condensed matter and materials physics, 2009-10, Vol.80 (16), Article 165314

2009

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Theory of the ground-state spin of the NV − center in diamond

Physical review. B, Condensed matter and materials physics, 2012-05, Vol.85 (20), Article 205203

2012

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Donor electron wave functions for phosphorus in silicon : Beyond effective-mass theory

Physical review. B, Condensed matter and materials physics, 2005-08, Vol.72 (8), p.085202.1-085202.8, Article 085202

2005

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Electrical readout of a spin qubit without double occupancy

Physical review. B, Condensed matter and materials physics, 2005-03, Vol.71 (11), p.113310.1-113310.4, Article 113310

2005

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Dynamical decoupling of a single-electron spin at room temperature

Physical review. B, Condensed matter and materials physics, 2011-02, Vol.83 (8), Article 081201

2011

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Coherent electron transport by adiabatic passage in an imperfect donor chain

Physical review. B, Condensed matter and materials physics, 2010-10, Vol.82 (15), Article 155315

2010

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Global control and fast solid-state donor electron spin quantum computing

Physical review. B, Condensed matter and materials physics, 2005-07, Vol.72 (4), p.045350.1-045350.9, Article 045350

2005

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Single-spin readout for buried dopant semiconductor qubits

Physical review. B, Condensed matter and materials physics, 2004-06, Vol.69 (23), p.233301.1-233301.4, Article 233301

2004

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Strain and electric field control of hyperfine interactions for donor spin qubits in silicon

Physical review. B, Condensed matter and materials physics, 2015-06, Vol.91 (24), Article 245209

2015

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Towards single-molecule NMR detection and spectroscopy using single spins in diamond

Physical review. B, Condensed matter and materials physics, 2014-02, Vol.89 (5), Article 054432

2014

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Probe and control of the reservoir density of states in single-electron devices

Physical review. B, Condensed matter and materials physics, 2010-04, Vol.81 (16), Article 161304

2010

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Optically induced spin-to-charge transduction in donor-spin readout

Physical review. B, Condensed matter and materials physics, 2005-11, Vol.72 (19), p.195325.1-195325.7, Article 195325

2005

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Temperature shifts of the resonances of the NV − center in diamond

Physical review. B, Condensed matter and materials physics, 2014-07, Vol.90 (4), Article 041201

2014

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Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

Physical review. B, Condensed matter and materials physics, 2011-09, Vol.84 (11), Article 115428

2011

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Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces

Physical review. B, Condensed matter, 2003-08, Vol.68 (7), Article 075317

2003

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Thermodynamic stability of neutral Xe defects in diamond

Physical review. B, Condensed matter and materials physics, 2010-08, Vol.82 (5), Article 054102

2010

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Electronic structure of realistically extended atomistically resolved disordered Si:P δ -doped layers

Physical review. B, Condensed matter and materials physics, 2011-11, Vol.84 (20), Article 205309

2011

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Coherent electronic transfer in quantum dot systems using adiabatic passage

Physical review. B, Condensed matter and materials physics, 2004-12, Vol.70 (23), p.235317.1-235317.6, Article 235317

2004

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Analytic solutions to the central-spin problem for nitrogen-vacancy centers in diamond

Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon

Spatial adiabatic passage in a realistic triple well structure

On the creation of near-surface nitrogen-vacancy centre ensembles by implantation of type Ib diamond

Two-dimensional architectures for donor-based quantum computing

Charge-based quantum computing using single donors in semiconductors

Electronic properties of multiple adjacent δ -doped Si:P layers: The approach to monolayer confinement

Orbital Stark effect and quantum confinement transition of donors in silicon

Theory of the ground-state spin of the NV − center in diamond

Donor electron wave functions for phosphorus in silicon : Beyond effective-mass theory

Electrical readout of a spin qubit without double occupancy

Dynamical decoupling of a single-electron spin at room temperature

Coherent electron transport by adiabatic passage in an imperfect donor chain

Global control and fast solid-state donor electron spin quantum computing

Single-spin readout for buried dopant semiconductor qubits

Strain and electric field control of hyperfine interactions for donor spin qubits in silicon

Towards single-molecule NMR detection and spectroscopy using single spins in diamond

Probe and control of the reservoir density of states in single-electron devices

Optically induced spin-to-charge transduction in donor-spin readout

Temperature shifts of the resonances of the NV − center in diamond

Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

Numerical study of hydrogenic effective mass theory for an impurity P donor in Si in the presence of an electric field and interfaces

Thermodynamic stability of neutral Xe defects in diamond

Electronic structure of realistically extended atomistically resolved disordered Si:P δ -doped layers

Coherent electronic transfer in quantum dot systems using adiabatic passage

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