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Structure and optical properties of silicon nanopowders
Materials science & engineering. B, Solid-state materials for advanced technology, 2008-02, Vol.147 (2), p.222-225
2008
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Silicon shallow doping by erbium and oxygen recoils implantation
Solid state communications, 2016-09, Vol.242, p.41-45
2016
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Raman shifts and photoluminescence of the InSb nanocrystals ion beam-synthesized in buried SiO2 layers
Journal of luminescence, 2018-12, Vol.204, p.656-662
2018
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Implantation of P ions in SiO2 layers with embedded Si nanocrystals
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-08, Vol.222 (3-4), p.497-504
2004
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Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films
Solid state communications, 2004-01, Vol.129 (1), p.63-68
2004
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Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD
Surface & coatings technology, 2003-09, Vol.174, p.1178-1181
2003
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Endotaxial growth of InSb nanocrystals at the bonding interface of the In+ and Sb+ ion implanted SOI structure
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1360-1363
2009
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Nanometer-thick SGOI structures produced by Ge+ ion implantation of SiO2 films and subsequent hydrogen transfer of Si layers
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1277-1280
2009
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Nanometer-thick SGOI structures produced by Ge super(+) ion implantation of SiO sub(2) films and subsequent hydrogen transfer of Si layers
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1277-1280
2009
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Endotaxial growth of InSb nanocrystals at the bonding interface of the In super(+) and Sb super(+) ion implanted SOI structure
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1360-1363
2009
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Nanometer-thick SGOI structures produced by Ge(+) ion implantation of SiO(2) films and subsequent hydrogen transfer of Si layers
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1277-1280
2009
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Endotaxial growth of InSb nanocrystals at the bonding interface of the In@u+ and Sb@u+ ion implanted SOI structure
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2009-05, Vol.267 (8-9), p.1360-1363
2009
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Consecutive stages of redistribution of oxygen implanted in silicon heavily doped with boron
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-10, Vol.251 (2), p.445-450
2006
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Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films
Solid state communications, 2004, Vol.129 (1), p.63-68
2004
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Fabrication and preliminary testing of regular microporous membranes manufactured by deep X-ray lithography at the VEPP-3 storage ring
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1995-05, Vol.359 (1), p.404-408
1995
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Epitaxial silicon films deposited at high rates by gas-jet electron beam plasma CVD
Surface & coatings technology, 2003, Vol.174-75, p.1178-1181
2003
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Enhanced germanium precipitation and nanocrystal growth in the Ge+ ion-implanted SiO2 films during high-pressure annealing
Solid state communications, 2016-12, Vol.247, p.53-57
2016
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