UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 95

Sortiert nach

Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3152-3158

2007

Link zum Volltext
IEEE_Xplore

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

IEEE electron device letters, 2014-03, Vol.35 (3), p.327-329

2014

Link zum Volltext
IEEE_Xplore

Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.977-983

2017

Link zum Volltext
IEEE_Xplore

Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.478-482

2008

Link zum Volltext
IEEE_Xplore

Mechanism of hot electron electroluminescence in GaN-based transistors

Journal of physics. D, Applied physics, 2016-11, Vol.49 (43), p.435101

2016

Link zum Volltext

Verfügbarkeit prüfen

Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3327-3333

2012

Link zum Volltext
IEEE_Xplore

GaN-on-diamond technology platform: Bonding-free membrane manufacturing process

AIP advances, 2020-03, Vol.10 (3), p.035306-035306-5

2020

Link zum Volltext

Verfügbarkeit prüfen

Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.13-19

2009

Link zum Volltext
IEEE_Xplore

Transport behavior of holes in boron delta-doped diamond structures

Journal of applied physics, 2013-01, Vol.113 (3), p.033702

2013

Link zum Volltext

Verfügbarkeit prüfen

Electrical and Thermal Performance of Ga₂O₃-Al₂O₃-Diamond Super-Junction Schottky Barrier Diodes

IEEE transactions on electron devices, 2021-10, Vol.68 (10), p.5055-5061

2021

Link zum Volltext
IEEE_Xplore

Investigation of the GaN-on-GaAs interface for vertical power device applications

Journal of applied physics, 2014-07, Vol.116 (1)

2014

Link zum Volltext

Verfügbarkeit prüfen

Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation

Applied physics letters, 2022-06, Vol.120 (24)

2022

Link zum Volltext

Verfügbarkeit prüfen

Extraction of Sub-Threshold Mobility in Ga2O3 Lateral Transistors From AC Conductance

IEEE electron device letters, 2023-12, Vol.44 (12), p.1943-1946

2023

Link zum Volltext
IEEE_Xplore

Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements

Journal of applied physics, 2024-05, Vol.135 (19)

2024

Link zum Volltext

Verfügbarkeit prüfen

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

IEEE transactions on electron devices, 2018-05, Vol.65 (5), p.1838-1842

2018

Link zum Volltext

Verfügbarkeit prüfen

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

IEEE electron device letters, 2015-08, Vol.36 (8), p.826-828

2015

Link zum Volltext
IEEE_Xplore

Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

Physica status solidi. A, Applications and materials science, 2012-12, Vol.209 (12), p.2646-2652

2012

Link zum Volltext

Verfügbarkeit prüfen

Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

IEEE electron device letters, 2018-10, Vol.39 (10), p.1572-1575

2018

Link zum Volltext

Verfügbarkeit prüfen

AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach

Semiconductor science and technology, 2023-07, Vol.38 (7), p.75009

2023

Link zum Volltext

Verfügbarkeit prüfen

Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology

IEEE transactions on electron devices, 2019-04, Vol.66 (4), p.1681-1687

2019

Link zum Volltext
IEEE_Xplore

Breakdown Mechanisms in β-Ga2O3 Trench-MOS Schottky-Barrier Diodes

IEEE transactions on electron devices, 2022-01, Vol.69 (1), p.75-81

2022

Link zum Volltext
IEEE_Xplore

Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation

Semiconductor science and technology, 2021-09, Vol.36 (9), p.95024

2021

Link zum Volltext

Verfügbarkeit prüfen

Characterization of trap states in buried nitrogen-implanted β-Ga2O3

Applied physics letters, 2020-12, Vol.117 (24)

2020

Link zum Volltext

Verfügbarkeit prüfen

Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

IEEE transactions on electron devices, 2006-10, Vol.53 (10), p.2438-2447

2006

Link zum Volltext
IEEE_Xplore

Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25-μm AlGaN/GaN HEMTs

IEEE electron device letters, 2012-11, Vol.33 (11), p.1550-1552

2012

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 95

Suche als RSS-Feed

Aktive Filter

KollektionMEDLINE

ThemaSemiconductor Devices

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(78)
Mit Volltextzugriff
(87)

Publikationsform

Sprache

Englisch
(95)
Japanisch
(24)

Erscheinungsjahr

n.n

Thema

Science & Technology
(74)
Technology
(63)
Physical Sciences
(47)
Engineering
(46)
Engineering, Electrical & Electronic
(45)
Physics
(45)
Physics, Applied
(39)
Materials Science
(21)
Gallium Nitride
(19)
Materials Science, Multidisciplinary
(16)
Gallium Nitrides
(15)
Hemts
(15)
Aluminum Gallium Nitride
(14)
Electrical And Electronic Engineering
(14)
Modfets
(13)
Transistors
(13)
Electronic, Optical And Magnetic Materials
(12)
Exact Sciences And Technology
(11)
Logic Gates
(11)
Applied Sciences
(10)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices

Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths

Lateral Charge Transport in the Carbon-Doped Buffer in AlGaN/GaN-on-Si HEMTs

Channel Temperature Determination in High-Power AlGaN/GaN HFETs Using Electrical Methods and Raman Spectroscopy

Mechanism of hot electron electroluminescence in GaN-based transistors

Buffer Design to Minimize Current Collapse in GaN/AlGaN HFETs

GaN-on-diamond technology platform: Bonding-free membrane manufacturing process

Analysis of DC-RF Dispersion in AlGaN/GaN HFETs Using RF Waveform Engineering

Transport behavior of holes in boron delta-doped diamond structures

Electrical and Thermal Performance of Ga₂O₃-Al₂O₃-Diamond Super-Junction Schottky Barrier Diodes

Investigation of the GaN-on-GaAs interface for vertical power device applications

Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation

Extraction of Sub-Threshold Mobility in Ga2O3 Lateral Transistors From AC Conductance

Analysis of interface trap induced ledge in β-Ga2O3 based MOS structures using UV-assisted capacitance–voltage measurements

Determination of the Self-Compensation Ratio of Carbon in AlGaN for HEMTs

Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors

Effects of gate shaping and consequent process changes on AlGaN/GaN HEMT reliability

Pulsed Large Signal RF Performance of Field-Plated Ga2O3 MOSFETs

AlGaN/GaN superlattice-based multichannel RF transistors for high linearity and reliability: a simplified simulation approach

Quantifying Temperature-Dependent Substrate Loss in GaN-on-Si RF Technology

Breakdown Mechanisms in β-Ga2O3 Trench-MOS Schottky-Barrier Diodes

Suppression of charge trapping in ON-state operation of AlGaN/GaN HEMTs by Si-rich passivation

Characterization of trap states in buried nitrogen-implanted β-Ga2O3

Integrated micro-Raman/infrared thermography probe for monitoring of self-heating in AlGaN/GaN transistor structures

Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25-μm AlGaN/GaN HEMTs

Aktive Filter

Suchergebnisse filtern