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Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In,Ga)Se2 solar cell

Progress in photovoltaics, 2018-09, Vol.26 (9), p.745-751

2018

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Comparative Study on the Gate‐Induced Electrical Instability of p‐Type SnO Thin‐Film Transistors with SiO2 and Al2O3/SiO2 Gate Dielectrics

Physica status solidi. PSS-RRL. Rapid research letters, 2020-10, Vol.14 (10), p.n/a

2020

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Atomic-layer-deposited SnO film using novel Sn(dmamb)2 precursor for p-channel thin film transistor

Applied surface science, 2021-05, Vol.547, p.148758, Article 148758

2021

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Polycrystalline and high purity SnO2 films by plasma-enhanced atomic layer deposition using H2O plasma at very low temperatures of 60–90 °C

Vacuum, 2022-02, Vol.196, p.110739, Article 110739

2022

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Atomic layer deposition of pure In2O3 films for a temperature range of 200–300 °C using heteroleptic liquid In(DMAMP)2(OiPr) precursor

Ceramics international, 2020-02, Vol.46 (3), p.3139-3143

2020

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Atomic layer deposition of nickel oxide films using Ni ( dmamp ) 2 and water

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-07, Vol.23 (4), p.1238-1243

2005

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Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Thin Films from a Zero-Valent (1,5-Hexadiene)(1-isopropyl-4-methylbenzene)ruthenium Complex and O2

Chemistry of materials, 2014-12, Vol.26 (24), p.7083-7090

2014

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Improved Initial Growth Behavior of SrO and SrTiO3 Films Grown by Atomic Layer Deposition Using {Sr(demamp)(tmhd)}2 as Sr-Precursor

Chemistry of materials, 2015-06

2015

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Atomic-layer-deposited SnO2 on Pt/C prevents sintering of Pt nanoparticles and affects the reaction chemistry for the electrocatalytic glycerol oxidation reaction

Journal of materials chemistry. A, Materials for energy and sustainability, 2020-01, Vol.8 (31), p.15992-16005

2020

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Tin oxysulfide composite thin films based on atomic layer deposition of tin sulfide and tin oxide using Sn(dmamp)2 as Sn precursor

Ceramics international, 2020-03, Vol.46 (4), p.5109-5118

2020

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Four-Bits-Per-Cell Operation in an HfO 2 -Based Resistive Switching Device

Small (Weinheim an der Bergstrasse, Germany), 2017-10, Vol.13 (40)

2017

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Chemical Vapor Deposition of HfO2 Thin Films Using the Novel Single Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp)4

Chemistry of materials, 2005-12, Vol.17 (26), p.6713-6718

2005

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Highly sensitive flexible NO2 sensor composed of vertically aligned 2D SnS2 operating at room temperature

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-01, Vol.8 (34), p.11874-11881

2020

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Effect of hydrogen atmosphere in Cu thin film growth by chemical vapor deposition using Cu(dmamb) 2

Microelectronic engineering, 2012, Vol.89, p.109-115

2012

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Atomic Layer Deposition of TiO2 Thin Films from Ti(OiPr)2(dmae)2 and H2O

Bulletin of the Korean Chemical Society, 2004, 25(4), , pp.475-479

2004

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Al concentration-dependent electrical modulation of Al-doped ZnO thin film using atomic layer deposition

Ceramics international, 2024-09

2024

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Evaluation of tin nitride (SnN) atomic layer deposition using novel volatile Sn precursors

Dalton transactions : an international journal of inorganic chemistry, 2023-10, Vol.52 (41), p.1533-1542

2023

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Plasma-enhanced atomic layer deposition of indium-free ZnSnOx thin films for thin-film transistors

Applied surface science, 2025-01, Vol.680, p.161320, Article 161320

2025

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Metal organic chemical vapor deposition of ZrO2 thin films using the single precursor zirconium 3-methyl-3-pentoxide, Zr(mp)4

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2006-07, Vol.24 (4), p.1208-1212

2006

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Synthesis and comparison of copper precursor using aminoalkoxide for copper containing thin films and nanomaterials

Journal of organometallic chemistry, 2024-10, Vol.1020, p.123347, Article 123347

2024

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Highly Photosensitive Lead Sulfide Thin Films Grown by H 2 S Free MOCVD Using a Single Source Metal‐Organic Precursor

Small (Weinheim an der Bergstrasse, Germany), 2022-10, Vol.18 (40)

2022

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Atomic Layer Deposition of Cu 2 SnS 3 Thin Films: Effects of Composition and Heat Treatment on Phase Transformation

Chemistry of materials, 2021-10, Vol.33 (20), p.8112-8123

2021

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ALD of Hafnium Dioxide Thin Films Using the New Alkoxide Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp)4

Chemical vapor deposition, 2006-11, Vol.12 (11), p.665-669

2006

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Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO detection at room temperature

Journal of materials chemistry. A, Materials for energy and sustainability, 2022-03, Vol.1 (9), p.4711-4719

2022

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Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO 2 detection at room temperature

Journal of materials chemistry. A, Materials for energy and sustainability, 2022-03, Vol.10 (9), p.4711-4719

2022

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Band gap engineering of atomic layer deposited ZnxSn1‐xO buffer for efficient Cu(In,Ga)Se2 solar cell

Comparative Study on the Gate‐Induced Electrical Instability of p‐Type SnO Thin‐Film Transistors with SiO2 and Al2O3/SiO2 Gate Dielectrics

Atomic-layer-deposited SnO film using novel Sn(dmamb)2 precursor for p-channel thin film transistor

Polycrystalline and high purity SnO2 films by plasma-enhanced atomic layer deposition using H2O plasma at very low temperatures of 60–90 °C

Atomic layer deposition of pure In2O3 films for a temperature range of 200–300 °C using heteroleptic liquid In(DMAMP)2(OiPr) precursor

Atomic layer deposition of nickel oxide films using Ni ( dmamp ) 2 and water

Atomic Layer Deposition of Ruthenium and Ruthenium Oxide Thin Films from a Zero-Valent (1,5-Hexadiene)(1-isopropyl-4-methylbenzene)ruthenium Complex and O2

Improved Initial Growth Behavior of SrO and SrTiO3 Films Grown by Atomic Layer Deposition Using {Sr(demamp)(tmhd)}2 as Sr-Precursor

Atomic-layer-deposited SnO2 on Pt/C prevents sintering of Pt nanoparticles and affects the reaction chemistry for the electrocatalytic glycerol oxidation reaction

Tin oxysulfide composite thin films based on atomic layer deposition of tin sulfide and tin oxide using Sn(dmamp)2 as Sn precursor

Four-Bits-Per-Cell Operation in an HfO 2 -Based Resistive Switching Device

Chemical Vapor Deposition of HfO2 Thin Films Using the Novel Single Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp)4

Highly sensitive flexible NO2 sensor composed of vertically aligned 2D SnS2 operating at room temperature

Effect of hydrogen atmosphere in Cu thin film growth by chemical vapor deposition using Cu(dmamb) 2

Atomic Layer Deposition of TiO2 Thin Films from Ti(OiPr)2(dmae)2 and H2O

Al concentration-dependent electrical modulation of Al-doped ZnO thin film using atomic layer deposition

Evaluation of tin nitride (SnN) atomic layer deposition using novel volatile Sn precursors

Plasma-enhanced atomic layer deposition of indium-free ZnSnOx thin films for thin-film transistors

Metal organic chemical vapor deposition of ZrO2 thin films using the single precursor zirconium 3-methyl-3-pentoxide, Zr(mp)4

Synthesis and comparison of copper precursor using aminoalkoxide for copper containing thin films and nanomaterials

Highly Photosensitive Lead Sulfide Thin Films Grown by H 2 S Free MOCVD Using a Single Source Metal‐Organic Precursor

Atomic Layer Deposition of Cu 2 SnS 3 Thin Films: Effects of Composition and Heat Treatment on Phase Transformation

ALD of Hafnium Dioxide Thin Films Using the New Alkoxide Precursor Hafnium 3-Methyl-3-pentoxide, Hf(mp)4

Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO detection at room temperature

Cross-linked structure of self-aligned p-type SnS nanoplates for highly sensitive NO 2 detection at room temperature

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