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1.3-μm wavelength-tunable quantum-dot optical frequency comb generator integrated with absorptive optical attenuator

Physica status solidi. C, 2012-02, Vol.9 (2), p.282-285

2012

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20 GHz gated tunnel diode based UWB pulse generator

35th International Symposium on Compound Semiconductors,Rust, Germany,2008-09-21 - 2008-09-24, 2009-06, Vol.6 (6), p.1399-1402

2009

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220 GHz low-noise amplifier MMICs and modules based on a high performance 50 nm metamorphic HEMT technology

Physica status solidi. C, 2007-04, Vol.4 (5), p.1667-1670

2007

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2D-patterned ferromagnetic III-Mn-V semiconductors for planar spintronics

Physica status solidi. C, 2007-04, Vol.4 (5), p.1755-1758

2007

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31 GHz power characteristics of GaN HEMTs with slightly etched AlGaN layer at ohmic contact

Physica status solidi. C, 2012-02, Vol.9 (2), p.369-372

2012

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Accurate measurement of atomic segregation to grain boundaries or to planar faults by analytical transmission electron microscopy

Physica status solidi. C, 2015-03, Vol.12 (3), p.310-313

Walther, Thomas

2015

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Advanced mHEMT MMICs for 220 GHz high-resolution imaging systems

Physica status solidi. C, 2009-06, Vol.6 (6), p.1390-1393

2009

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Advanced millimeter-wave ICs using metamorphic HEMT technology

Physica status solidi. C, 2006-03, Vol.3 (3), p.465-468

2006

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Analysis of a monolithic integrated rectenna by using an InGaAs/InAlAs triple-barrier resonant tunneling diode for zero bias detection of submilimeter-waves

Physica status solidi. C, 2012-02, Vol.9 (2), p.377-380

2012

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Analysis of resonant MEMS based on high-electron mobility transistor-like structure

Physica status solidi. C, 2012-02, Vol.9 (2), p.399-402

2012

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Arrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/s optical interconnects

Physica status solidi. C, 2012-02, Vol.9 (2), p.290-293

2012

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Beam steering and lateral hole burning in mid-infrared quantum- cascade lasers

Physica status solidi. C, 2012-02, Vol.9 (2), p.302-305

2012

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Biexcitonic photocurrent induced by two-photon process at a telecommunication band

Physica status solidi. C, 2009-06, Vol.6 (6), p.1445-1448

2009

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Bismuth incorporation in GaAs1-xBix grown by molecular beam epitaxy with in-situ light scattering

Physica status solidi. C, 2007-04, Vol.4 (5), p.1707-1710

2007

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Blue-shift of phosphorous-implanted InGaAs/InGaAsP MQW laser structures by two-step anneals

Physica status solidi. C, 2007-04, Vol.4 (5), p.1739-1742

2007

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C -plane chromia on c -plane sapphire

Physica status solidi. C, 2009-06, Vol.6 (6), p.1472-1475

2009

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Catalyst free MBE-VLS growth of GaAs nanowires on (111)Si substrate

Physica status solidi. C, 2009-06, Vol.6 (6), p.1436-1440

2009

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Characteristics of electron beam-evaporated high k -TiOx thin films on n-GaAs

Physica status solidi. C, 2007-04, Vol.4 (5), p.1723-1726

2007

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Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on same epitaxial wafer with In0.75Ga0.25As/InGaAs channel layer

Physica status solidi. C, 2012-02, Vol.9 (2), p.357-360

2012

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Characterization of CuGaO2 films prepared by sol-gel methods

Physica status solidi. C, 2012-02, Vol.9 (2), p.198-201

2012

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Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM

Physica status solidi. C, 2012-03, Vol.9 (3-4), p.546-549

2012

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Circular polariscopic measurement of a semi-insulating SiC wafer for evaluating strains and its relation with Raman spectra: Superiority to monochromatic Lang X-ray topography

Physica status solidi. C, 2012-02, Vol.9 (2), p.266-269

Takeuchi, Hideo

2012

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Comparative study on nano-scale III-V MOSFETs with various channel materials using quantum-corrected Monte Carlo simulation

Physica status solidi. C, 2012-02, Vol.9 (2), p.346-349

2012

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Comparison of InAs nanowire conductivity: influence of growth method and structure

Physica status solidi. C, 2012-02, Vol.9 (2), p.230-234

2012

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Comprehensive modelling of resonant-cavity light-emitting diode

Physica status solidi. C, 2007-04, Vol.4 (5), p.1633-1636

2007

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1.3-μm wavelength-tunable quantum-dot optical frequency comb generator integrated with absorptive optical attenuator

20 GHz gated tunnel diode based UWB pulse generator

220 GHz low-noise amplifier MMICs and modules based on a high performance 50 nm metamorphic HEMT technology

2D-patterned ferromagnetic III-Mn-V semiconductors for planar spintronics

31 GHz power characteristics of GaN HEMTs with slightly etched AlGaN layer at ohmic contact

Accurate measurement of atomic segregation to grain boundaries or to planar faults by analytical transmission electron microscopy

Advanced mHEMT MMICs for 220 GHz high-resolution imaging systems

Advanced millimeter-wave ICs using metamorphic HEMT technology

Analysis of a monolithic integrated rectenna by using an InGaAs/InAlAs triple-barrier resonant tunneling diode for zero bias detection of submilimeter-waves

Analysis of resonant MEMS based on high-electron mobility transistor-like structure

Arrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/s optical interconnects

Beam steering and lateral hole burning in mid-infrared quantum- cascade lasers

Biexcitonic photocurrent induced by two-photon process at a telecommunication band

Bismuth incorporation in GaAs1-xBix grown by molecular beam epitaxy with in-situ light scattering

Blue-shift of phosphorous-implanted InGaAs/InGaAsP MQW laser structures by two-step anneals

C -plane chromia on c -plane sapphire

Catalyst free MBE-VLS growth of GaAs nanowires on (111)Si substrate

Characteristics of electron beam-evaporated high k -TiOx thin films on n-GaAs

Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on same epitaxial wafer with In0.75Ga0.25As/InGaAs channel layer

Characterization of CuGaO2 films prepared by sol-gel methods

Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM

Circular polariscopic measurement of a semi-insulating SiC wafer for evaluating strains and its relation with Raman spectra: Superiority to monochromatic Lang X-ray topography

Comparative study on nano-scale III-V MOSFETs with various channel materials using quantum-corrected Monte Carlo simulation

Comparison of InAs nanowire conductivity: influence of growth method and structure

Comprehensive modelling of resonant-cavity light-emitting diode

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