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38th International Symposium on Compound Semiconductors (ISCS)/23rd International Conference on Indium Phosphide and Related Materials (IPRM)/Compound Semiconductor Week,Berlin, Germany,2011-05-22 - 2011-05-26, 2012-02, Vol.9 (2), p.206-209

2012

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Sensors using AlGaN/GaN based high electron mobility transistor for environmental and bio-applications

Physica status solidi. C, 2012-02, Vol.9 (2), p.393-398

2012

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InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

Physica status solidi. C, 2009-06, Vol.6 (6), p.1394-1398

2009

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Well-arrayed ZnO nanostructures formed by multi-annealing processes at low temperature

Physica status solidi. C, 2012-02, Vol.9 (2), p.194-197

2012

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Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain

Physica status solidi. C, 2012-02, Vol.9 (2), p.175-178

2012

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Tunable capacitive inter-dot coupling in a bilayer graphene double quantum dot

Physica status solidi. C, 2012-02, Vol.9 (2), p.169-174, Article 169

2012

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Beam steering and lateral hole burning in mid-infrared quantum- cascade lasers

Physica status solidi. C, 2012-02, Vol.9 (2), p.302-305

2012

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Comparison of InAs nanowire conductivity: influence of growth method and structure

Physica status solidi. C, 2012-02, Vol.9 (2), p.230-234

2012

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The influence of background As on GaSb/GaAs quantum dots and its application in infrared photodetectors

Physica status solidi. C, 2012-02, Vol.9 (2), p.314-317

2012

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An over 100 W AlGaN/GaN enhancement-mode HEMT power amplifier with piezoelectric-induced cap structure

Physica status solidi. C, 2009-06, Vol.6 (6), p.1365-1368

2009

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Evaluation of AlN material properties through vibration analysis of thin membranes

Physica status solidi. C, 2012-02, Vol.9 (2), p.403-406

2012

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Transport and magnetotransport effects in indium antimonide doped with manganese within quasimetal-insulator transition

Physica status solidi. C, 2012-02, Vol.9 (2), p.247-250

Obukhov, S. A.

2012

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Room temperature photoluminescence intensity enhancement in GaAs1-xBix alloys

Physica status solidi. C, 2012-02, Vol.9 (2), p.259-261

2012

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Trade-offs between performance and reliability in AlGaN/GaN transistors

Physica status solidi. C, 2012-02, Vol.9 (2), p.365-368

2012

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Modelling of passive mode-locking in InAs quantum-dot lasers with tapered gain section

Physica status solidi. C, 2012-02, Vol.9 (2), p.286-289

2012

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Analysis of a monolithic integrated rectenna by using an InGaAs/InAlAs triple-barrier resonant tunneling diode for zero bias detection of submilimeter-waves

Physica status solidi. C, 2012-02, Vol.9 (2), p.377-380

2012

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1.3-μm wavelength-tunable quantum-dot optical frequency comb generator integrated with absorptive optical attenuator

Physica status solidi. C, 2012-02, Vol.9 (2), p.282-285

2012

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Highly stacked InGaAs quantum dot laser diodes fabricated by ultrahigh-rate molecular beam epitaxial growth technique

Physica status solidi. C, 2012-02, Vol.9 (2), p.226-229

2012

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Characterization of CuGaO2 films prepared by sol-gel methods

Physica status solidi. C, 2012-02, Vol.9 (2), p.198-201

2012

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Catalyst free MBE-VLS growth of GaAs nanowires on (111)Si substrate

Arrays of 850 nm photodiodes and vertical cavity surface emitting lasers for 25 to 40 Gbit/s optical interconnects

InAs/AlGaSb heterojunction tunnel field-effect transistor with tunnelling in-line with the gate field

Low noise high responsivity InAs electron avalanche photodiodes for infrared sensing

Halide based MBE of crystalline metals and oxides

High carrier concentration in high Al-composition AlGaN-channnel HEMTs

Highly controlled InAs nanowires on Si(111) wafers by MOVPE

Sensors using AlGaN/GaN based high electron mobility transistor for environmental and bio-applications

InGaAs channel MOSFET with self-aligned source/drain MBE regrowth technology

Well-arrayed ZnO nanostructures formed by multi-annealing processes at low temperature

Graphene growth using propane-hydrogen CVD on 6H-SiC(0001): temperature dependent interface and strain

Tunable capacitive inter-dot coupling in a bilayer graphene double quantum dot

Beam steering and lateral hole burning in mid-infrared quantum- cascade lasers

Comparison of InAs nanowire conductivity: influence of growth method and structure

The influence of background As on GaSb/GaAs quantum dots and its application in infrared photodetectors

An over 100 W AlGaN/GaN enhancement-mode HEMT power amplifier with piezoelectric-induced cap structure

Evaluation of AlN material properties through vibration analysis of thin membranes

Transport and magnetotransport effects in indium antimonide doped with manganese within quasimetal-insulator transition

Room temperature photoluminescence intensity enhancement in GaAs1-xBix alloys

Trade-offs between performance and reliability in AlGaN/GaN transistors

Modelling of passive mode-locking in InAs quantum-dot lasers with tapered gain section

Analysis of a monolithic integrated rectenna by using an InGaAs/InAlAs triple-barrier resonant tunneling diode for zero bias detection of submilimeter-waves

1.3-μm wavelength-tunable quantum-dot optical frequency comb generator integrated with absorptive optical attenuator

Highly stacked InGaAs quantum dot laser diodes fabricated by ultrahigh-rate molecular beam epitaxial growth technique

Characterization of CuGaO2 films prepared by sol-gel methods

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