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Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

Journal of applied physics, 2015-10, Vol.118 (15)

2015

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X-ray mapping in a scanning transmission electron microscope of InGaAs quantum dots with embedded fractional monolayers of aluminium

Semiconductor science and technology, 2020-08, Vol.35 (8), p.84001

2020

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An improved approach to quantitative X-ray microanalysis in (S)TEM: Thickness dependent k-factors

Journal of physics. Conference series, 2010-07, Vol.241 (1), p.012016

Walther, T

2010

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Defect properties of vanadium doped barium titanate ceramics

Materials research express, 2019-11, Vol.6 (11), p.115210

2019

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Quantification of carbon contamination under electron beam irradiation in a scanning transmission electron microscope and its suppression by plasma cleaning

Journal of physics. Conference series, 2010-07, Vol.241 (1), p.012017

2010

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Combination of electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy to determine indium concentration in InGaN thin film structures

Semiconductor science and technology, 2015-11, Vol.30 (11), p.114011

2015

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Homogeneous Array of Nanowire-Embedded Quantum Light Emitters

Nano letters, 2013-03, Vol.13 (3), p.861-865

2013

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Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

Journal of applied physics, 2014-01, Vol.115 (1)

2014

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A simple method to improve the quantification accuracy of energy-dispersive X-ray microanalysis

Journal of physics. Conference series, 2008-08, Vol.126 (1), p.012090, Article 012090

Walther, T

2008

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A comparison of transmission electron microscopy methods to measure wetting layer thicknesses to sub-monolayer precision

Journal of physics. Conference series, 2008-08, Vol.126 (1), p.012091

Walther, T

2008

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Nanostructure and strain properties of core-shell GaAs AlGaAs nanowires

Semiconductor science and technology, 2015-11, Vol.30 (11), p.114012

2015

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Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates

Thin solid films, 2012-02, Vol.520 (8), p.3222-3226

2012

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Coexistence of clusters, GPB zones, S″-, S′- and S-phases in an Al–0.9% Cu–1.4% Mg alloy

Acta materialia, 2000-06, Vol.48 (10), p.2751-2764

2000

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Probe position recovery for ptychographical imaging

Journal of physics. Conference series, 2010-07, Vol.241 (1), p.012004

2010

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Measuring the contrast in annular dark field STEM images as a function of camera length

Journal of physics. Conference series, 2010-07, Vol.241 (1), p.012068

2010

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Stranski-Krastanov growth of (Si)Ge/Si(001): transmission electron microscopy compared with segregation theory

Materials science and technology, 2018-09, Vol.34 (13), p.1539-1548

2018

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Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires

Journal of crystal growth, 2011-07, Vol.327 (1), p.27-34

2011

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Structure of PtFe/Fe double-period multilayers investigated by X-ray diffraction, reflectivity, diffuse scattering and TEM

Applied surface science, 2006-10, Vol.253 (1), p.128-132

2006

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Study of the effect of annealing of In(Ga)As quantum dots

Journal of physics. Conference series, 2010-07, Vol.241 (1), p.012054

2010

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Electron microscopy of AlGaN-based multilayers for UV laser devices

Journal of physics. Conference series, 2010-07, Vol.241 (1), p.012048

2010

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A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy

Journal of crystal growth, 1999-02, Vol.197 (1), p.113-128

1999

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Structural and magnetic characteristics of FeCo thin films modified by combinatorial ion implantation

Thin solid films, 2006-01, Vol.495 (1), p.169-174

2006

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TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology

Journal of physics. Conference series, 2010-07, Vol.241 (1), p.012044

2010

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Development of a technique for a quantitative study of the order and composition of an iron-palladium alloy on the nanometre scale in an electron microscope with imaging filter

Philosophical magazine letters, 1999-01, Vol.79 (1), p.31-39

Walther, T .

1999

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Stranski-Krastanow transition and epitaxial island growth

Physical review. B, Condensed matter, 2002-08, Vol.66 (8), Article 081305

2002

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Defects, strain relaxation, and compositional grading in high indium content InGaN epilayers grown by molecular beam epitaxy

X-ray mapping in a scanning transmission electron microscope of InGaAs quantum dots with embedded fractional monolayers of aluminium

An improved approach to quantitative X-ray microanalysis in (S)TEM: Thickness dependent k-factors

Defect properties of vanadium doped barium titanate ceramics

Quantification of carbon contamination under electron beam irradiation in a scanning transmission electron microscope and its suppression by plasma cleaning

Combination of electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy to determine indium concentration in InGaN thin film structures

Homogeneous Array of Nanowire-Embedded Quantum Light Emitters

Similarity of Stranski-Krastanow growth of Ge/Si and SiGe/Si (001)

A simple method to improve the quantification accuracy of energy-dispersive X-ray microanalysis

A comparison of transmission electron microscopy methods to measure wetting layer thicknesses to sub-monolayer precision

Nanostructure and strain properties of core-shell GaAs AlGaAs nanowires

Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substrates

Coexistence of clusters, GPB zones, S″-, S′- and S-phases in an Al–0.9% Cu–1.4% Mg alloy

Probe position recovery for ptychographical imaging

Measuring the contrast in annular dark field STEM images as a function of camera length

Stranski-Krastanov growth of (Si)Ge/Si(001): transmission electron microscopy compared with segregation theory

Direct observation by transmission electron microscopy of the influence of Ni catalyst-seeds on the growth of GaN–AlGaN axial heterostructure nanowires

Structure of PtFe/Fe double-period multilayers investigated by X-ray diffraction, reflectivity, diffuse scattering and TEM

Study of the effect of annealing of In(Ga)As quantum dots

Electron microscopy of AlGaN-based multilayers for UV laser devices

A quantitative study of compositional profiles of chemical vapour-deposited strained silicon–germanium/silicon layers by transmission electron microscopy

Structural and magnetic characteristics of FeCo thin films modified by combinatorial ion implantation

TEM analysis of Si-passivated Ge-on-Si MOSFET structures for high performance PMOS device technology

Development of a technique for a quantitative study of the order and composition of an iron-palladium alloy on the nanometre scale in an electron microscope with imaging filter

Stranski-Krastanow transition and epitaxial island growth

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