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Simulation-based investigations on the drape behavior of 3D woven fabrics made of commingled yarns

International journal of material forming, 2016-11, Vol.9 (5), p.591-599

2016

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D-term inflation, cosmic strings, and consistency with cosmic microwave background measurements

Physical review letters, 2005-01, Vol.94 (1), p.011303.1-011303.4, Article 011303

2005

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Constraints on supersymmetric grand unified theories from cosmology

Journal of cosmology and astroparticle physics, 2005-03, Vol.2005 (3), p.4-4

2005

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Extending high-finesse cavity techniques to the far-infrared

Review of scientific instruments, 2013-07, Vol.84 (7), p.075107-075107

2013

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Transmission electron microscopy and Raman measurements of the misfit stress in a Si tensile strained layer

Applied physics letters, 2004-02, Vol.84 (6), p.870-872

2004

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Geometrical criteria required for the determination of the epitaxial stress from the transmission electron microscopy curvature method

Applied physics letters, 2005-05, Vol.86 (19), p.191901-191901-3

2005

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How generic is cosmic string formation in supersymmetric grand unified theories

Physical review. D, Particles and fields, 2003-11, Vol.68 (10), Article 103514

2003

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Évolution récente du cycle du carbone planétaire : facteurs humains et naturels

Météorologie (Paris), 2016, Vol.8 (93), p.3

2016

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TEM measurement of the misfit stress by a curvature method in semiconducting epitaxial system

European physical journal. Applied physics, 2004-05, Vol.26 (2), p.87-94

2004

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Resonant Raman scattering in GaAsN: Mixing, localization, and impurity band formation of electronic states

Physical review. B, Condensed matter, 2003-05, Vol.67 (20), Article 205325

2003

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The Effect of Controllable Optically-Induced Random Anisotropic Disorder On The Magnetotransport In A Two-Dimensional Electron System

Physics of Semiconductors; Part A, 2005, Vol.772, p.461-462

2005

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Atomic scale saw by dislocation slipping: A new method to generate one-dimensional structure

Applied physics letters, 1992-05, Vol.60 (20), p.2481-2483

1992

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TEM evaluation of strain and stress in III-V semiconductor epitaxial structures

Physica status solidi. A, Applied research, 2004-01, Vol.201 (2), p.357-363

2004

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Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers

MRS proceedings, 1995, Vol.378, p.863-868, Article 863

1995

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CrSi2/Si(111): Growth of monotype domains by solid phase epitaxy on a vicinal surface

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1994-11, Vol.12 (6), p.3018-3022

1994

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Experimental study of the efficiency of storage in an RF ion trap

Rapid communications in mass spectrometry, 1995, Vol.9 (15), p.1580-1583

1995

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and centres in KCl and KBr doped with either carbonates or sulphates

Journal of physics. Condensed matter, 1996-08, Vol.8 (33), p.6105-6112

1996

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Deep etch X-ray lithography using silicon-gold masks fabricated by deep etch UV lithography and electroforming

Journal of micromechanics and microengineering, 1995-09, Vol.5 (3), p.203-208

1995

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Charged defects at the interface between directly bonded silicon wafers

Japanese Journal of Applied Physics, 1997-09, Vol.36 (9A), p.5502-5506

1997

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(F2+)H and (F2+)AH centres in KCI and KBr doped with either carbonates or sulphates

Journal of physics. Condensed matter, 1996, Vol.8 (33), p.6105-6112

1996

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A new casting process for carbon (or SiC-based) fibre-aluminium matrix low-cost composite materials

Journal of materials science letters, 1985-12, Vol.4 (12), p.1527-1529

1985

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Direct Wafer Bonding of Preamorphized Silicon Wafers

MRS proceedings, 1995, Vol.378, p.869-874, Article 869

1995

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Atoimic scale saw by dislocation slipping : a new method to generate one-dimensional structure

Applied physics letters, 1992, Vol.60 (20), p.2481-2483

1992

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MoirÉ Pattern Studies of Thin Layers Deposited on (001)Si Substrates: Cases of Tisi2 and GaAs

MRS proceedings, 1989, Vol.148

1989

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Theoretical and experimental temperature dependence of GaAs N-off IC's over 120 K to 400 K

Physica B + C, 1985-01, Vol.129 (1), p.403-407

1985

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Simulation-based investigations on the drape behavior of 3D woven fabrics made of commingled yarns

D-term inflation, cosmic strings, and consistency with cosmic microwave background measurements

Constraints on supersymmetric grand unified theories from cosmology

Extending high-finesse cavity techniques to the far-infrared

Transmission electron microscopy and Raman measurements of the misfit stress in a Si tensile strained layer

Geometrical criteria required for the determination of the epitaxial stress from the transmission electron microscopy curvature method

How generic is cosmic string formation in supersymmetric grand unified theories

Évolution récente du cycle du carbone planétaire : facteurs humains et naturels

TEM measurement of the misfit stress by a curvature method in semiconducting epitaxial system

Resonant Raman scattering in GaAsN: Mixing, localization, and impurity band formation of electronic states

The Effect of Controllable Optically-Induced Random Anisotropic Disorder On The Magnetotransport In A Two-Dimensional Electron System

Atomic scale saw by dislocation slipping: A new method to generate one-dimensional structure

TEM evaluation of strain and stress in III-V semiconductor epitaxial structures

Atomic Structure of the Interfaces Between Silicon Directly Bonded Wafers

CrSi2/Si(111): Growth of monotype domains by solid phase epitaxy on a vicinal surface

Experimental study of the efficiency of storage in an RF ion trap

and centres in KCl and KBr doped with either carbonates or sulphates

Deep etch X-ray lithography using silicon-gold masks fabricated by deep etch UV lithography and electroforming

Charged defects at the interface between directly bonded silicon wafers

(F2+)H and (F2+)AH centres in KCI and KBr doped with either carbonates or sulphates

A new casting process for carbon (or SiC-based) fibre-aluminium matrix low-cost composite materials

Direct Wafer Bonding of Preamorphized Silicon Wafers

Atoimic scale saw by dislocation slipping : a new method to generate one-dimensional structure

MoirÉ Pattern Studies of Thin Layers Deposited on (001)Si Substrates: Cases of Tisi2 and GaAs

Theoretical and experimental temperature dependence of GaAs N-off IC's over 120 K to 400 K

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