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0.026µm2 high performance Embedded DRAM in 22nm technology for server and SOC applications

2014 IEEE International Electron Devices Meeting, 2014, p.19.4.1-19.4.4

2014

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A 0.1-micron gate Al(0.5)In(0.5)As/Ga(0.5)In(0.5)As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35, p.818-823

1988

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A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

IEEE journal of solid-state circuits, 2007, Vol.42 (1), p.210-218

2007

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A 0.1-[mu]m 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

IEEE journal of solid-state circuits, 2007-01, Vol.42 (1), p.210-218

2007

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A 0.1- mu m gate Al sub(0.5)As/Ga sub(0.5)In sub(0.5)As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-01, Vol.35 (7), p.818-823

1988

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A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35 (7), p.818-823

1988

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A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier

GaAs IC Symposium Technical Digest 1992, 1992, p.71-74

1992

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A 0.1-μm gate Al0.5In0.5As/Ga0.5In0.5As MODFET fabricated on GaAs substrates

IEEE transactions on electron devices, 1988-07, Vol.35 (7), p.818-823

1988

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A 0.127 μm2 High Performance 65nm SOI Based embedded DRAM for on-Processor Applications

2006 International Electron Devices Meeting, 2006, p.1-4

2006

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A 0.13 /spl mu/m CMOS platform with Cu/low-k interconnects for system on chip applications

2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184), 2001, p.101-102

2001

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A 0.13μm CMOS SoC for all-format blue and red laser DVD front-end digital signal processor

2006 IEEE International Solid State Circuits Conference - Digest of Technical Papers, 2006, p.1012-1021

2006

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0.15 micron gate AlInAs/GaInAs MHEMT fabricated on GaAs using deep-UV phase-shifting mask lithography

GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997, 1997, p.74-77

1997

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0.15uM Y-Gate pHEMT Process Using Deep-UV Phase-Shift Lithography

2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2011, p.1-4

2011

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A 0.168/spl mu/m/sup 2//0.11/spl mu/m/sup 2/ highly scalable high performance embedded DRAM cell for 90/65-nm logic applications

IEEE VLSI-TSA International Symposium on VLSI Technology, 2005. (VLSI-TSA-Tech), 2005, p.31-32

2005

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0.25-micron gate millimeter-wave ion-implanted GaAs MESFET's

IEEE electron device letters, 1989-05, Vol.10, p.186-188

1989

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0.25- mu m gate In sub(0.48)Ga sub(0.52)P/In sub(0.20)Ga sub(0.80)As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxy

Solid-state electronics, 1999-01, Vol.43 (4), p.785-789

1999

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0.25-μm gate In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxy

Solid-state electronics, 1999-04, Vol.43 (4), p.785-789

1999

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A 0.27mm2 13.5dBm 2.4GHz all-digital polar transmitter using 34%-efficiency Class-D DPA in 40nm CMOS

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 2013, p.342-343

2013

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A 0.35 mW 70 GHz Divide-by-4 TSPC Frequency Divider on 22 nm FD-SOI CMOS Technology

2020 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), 2020, p.243-246

2020

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A 0.37μW 4bit 1MS/s SAR ADC for ultra-low energy radios

Proceedings of 2011 International Symposium on VLSI Design, Automation and Test, 2011, p.1-4

2011

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A 0.48V 0.57nJ/pixel video-recording SoC in 65nm CMOS

2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, 2013, p.158-159

2013

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0.5THz Smith-Purcell device using sheet electron beam

2009 IEEE International Vacuum Electronics Conference, 2009, p.302-303

2009

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0.8 GeV p + Pb 208 elastic scattering and the quantity Δ r np

Physical review. C, Nuclear physics, 1980-04, Vol.21 (4), p.1488-1494

1980

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0.90(Na0.5Bi0.5TiO3)–0.06BaTiO3–0.04K0.5Na0.5NbO3 Ferroelectric Thin Films Derived from Chemical Solutions

Journal of the American Ceramic Society, 2011-01, Vol.94 (5), p.1331-1335

2011

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A 0.96pJ/SOP, 30.23K-neuron/mm2 Heterogeneous Neuromorphic Chip With Fullerene-like Interconnection Topology for Edge-AI Computing

2024 IEEE International Symposium on Circuits and Systems (ISCAS), 2024, p.1-5

2024

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0.026µm2 high performance Embedded DRAM in 22nm technology for server and SOC applications

A 0.1-micron gate Al(0.5)In(0.5)As/Ga(0.5)In(0.5)As MODFET fabricated on GaAs substrates

A 0.1-μm 1.8-V 256-Mb phase-change random access memory (PRAM) with 66-MHz synchronous burst-read operation

A 0.1-[mu]m 1.8-V 256-Mb Phase-Change Random Access Memory (PRAM) With 66-MHz Synchronous Burst-Read Operation

A 0.1- mu m gate Al sub(0.5)As/Ga sub(0.5)In sub(0.5)As MODFET fabricated on GaAs substrates

A 0.1- mu m gate Al/sub 0.5/In/sub 0.5/As/Ga/sub 0.5/In/sub 0.5/As MODFET fabricated on GaAs substrates

A 0.1-W W-band pseudomorphic HEMT MMIC power amplifier

A 0.1-μm gate Al0.5In0.5As/Ga0.5In0.5As MODFET fabricated on GaAs substrates

A 0.127 μm2 High Performance 65nm SOI Based embedded DRAM for on-Processor Applications

A 0.13 /spl mu/m CMOS platform with Cu/low-k interconnects for system on chip applications

A 0.13μm CMOS SoC for all-format blue and red laser DVD front-end digital signal processor

0.15 micron gate AlInAs/GaInAs MHEMT fabricated on GaAs using deep-UV phase-shifting mask lithography

0.15uM Y-Gate pHEMT Process Using Deep-UV Phase-Shift Lithography

A 0.168/spl mu/m/sup 2//0.11/spl mu/m/sup 2/ highly scalable high performance embedded DRAM cell for 90/65-nm logic applications

0.25-micron gate millimeter-wave ion-implanted GaAs MESFET's

0.25- mu m gate In sub(0.48)Ga sub(0.52)P/In sub(0.20)Ga sub(0.80)As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxy

0.25-μm gate In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxy

A 0.27mm2 13.5dBm 2.4GHz all-digital polar transmitter using 34%-efficiency Class-D DPA in 40nm CMOS

A 0.35 mW 70 GHz Divide-by-4 TSPC Frequency Divider on 22 nm FD-SOI CMOS Technology

A 0.37μW 4bit 1MS/s SAR ADC for ultra-low energy radios

A 0.48V 0.57nJ/pixel video-recording SoC in 65nm CMOS

0.5THz Smith-Purcell device using sheet electron beam

0.8 GeV p + Pb 208 elastic scattering and the quantity Δ r np

0.90(Na0.5Bi0.5TiO3)–0.06BaTiO3–0.04K0.5Na0.5NbO3 Ferroelectric Thin Films Derived from Chemical Solutions

A 0.96pJ/SOP, 30.23K-neuron/mm2 Heterogeneous Neuromorphic Chip With Fullerene-like Interconnection Topology for Edge-AI Computing

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