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Inverse Piezoelectric and Trap Effects With Temperature Dependence in AlGaN/GaN HEMTs Under Narrowband Microwave Pulses

IEEE transactions on electromagnetic compatibility, 2023-06, Vol.65 (3), p.794-803

2023

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Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1622-1627

2023

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Radiation Response of AlGaN-Channel HEMTs

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.344-351

2019

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3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

IEEE electron device letters, 2020-08, Vol.41 (8), p.1177-1180

2020

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ε-Ga₂O₃: A Promising Candidate for High-Electron-Mobility Transistors

IEEE electron device letters, 2020-07, Vol.41 (7), p.1052-1055

2020

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Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

IEEE electron device letters, 2021-06, Vol.42 (6), p.796-799

2021

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Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

IEEE transactions on electron devices, 2020-11, Vol.67 (11), p.4602-4605

2020

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Radiation Effects in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1-1

2022

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Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

IEEE electron device letters, 2019-02, Vol.40 (2), p.275-278

2019

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Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

IEEE electron device letters, 2019-08, Vol.40 (8), p.1253-1256

2019

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Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

IEEE electron device letters, 2012-04, Vol.33 (4), p.516-518

2012

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High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

IEEE electron device letters, 2016-12, Vol.37 (12), p.1617-1620

2016

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A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1489-1494

2021

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AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz

IEEE electron device letters, 2023-01, Vol.44 (1), p.17-20

2023

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Modeling of Short-Channel Effects in GaN HEMTs

IEEE transactions on electron devices, 2020-08, Vol.67 (8), p.3088-3094

2020

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Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.364-371

2019

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Passivation Schemes for ScAlN-Barrier mm-Wave High Electron Mobility Transistors

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.962-967

2022

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Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1113-1119

2020

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Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

IEEE transactions on electron devices, 2023-02, Vol.70 (2), p.449-453

2023

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Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess

IEEE electron device letters, 2020-05, Vol.41 (5), p.701-704

2020

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Experimental Results for AlGaN/GaN HEMTs Improving Breakdown Voltage and Output Current by Electric Field Modulation

IEEE transactions on electron devices, 2021-05, Vol.68 (5), p.2240-2245

2021

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Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2019-01, Vol.66 (1), p.561-569

2019

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660-V/1.99-mΩ.cm2 Low-Current-Collapse p-GaN/AlGaN/GaN HEMTs With Selective Regrowth AlN/AlGaN Strain Layers

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1523-1528

2024

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A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC

IEEE transactions on microwave theory and techniques, 2017-08, Vol.65 (8), p.2836-2846

2017

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MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1860-1864

2023

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Inverse Piezoelectric and Trap Effects With Temperature Dependence in AlGaN/GaN HEMTs Under Narrowband Microwave Pulses

Compensation Dopant-Free GaN-on-Si HEMTs With a Polarization Engineered Buffer for RF Applications

Radiation Response of AlGaN-Channel HEMTs

3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination

ε-Ga₂O₃: A Promising Candidate for High-Electron-Mobility Transistors

Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress

Radiation Effects in AlGaN/GaN HEMTs

Multi-Channel Tri-Gate GaN Power Schottky Diodes With Low ON-Resistance

Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film

High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure

A Novel Physics-Based Approach to Analyze and Model E-Mode p-GaN Power HEMTs

AlScN/GaN HEMTs Grown by Metal-Organic Chemical Vapor Deposition With 8.4 W/mm Output Power and 48 % Power-Added Efficiency at 30 GHz

Modeling of Short-Channel Effects in GaN HEMTs

Impact of Channel Thickness on the Large-Signal Performance in InAlGaN/AlN/GaN HEMTs With an AlGaN Back Barrier

Passivation Schemes for ScAlN-Barrier mm-Wave High Electron Mobility Transistors

Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs

Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

Millimeter-Wave AlGaN/GaN HEMTs With 43.6% Power-Added-Efficiency at 40 GHz Fabricated by Atomic Layer Etching Gate Recess

Experimental Results for AlGaN/GaN HEMTs Improving Breakdown Voltage and Output Current by Electric Field Modulation

Part I: Physical Insight Into Carbon-Doping-Induced Delayed Avalanche Action in GaN Buffer in AlGaN/GaN HEMTs

660-V/1.99-mΩ.cm2 Low-Current-Collapse p-GaN/AlGaN/GaN HEMTs With Selective Regrowth AlN/AlGaN Strain Layers

A Scalable Large-Signal Multiharmonic Model of AlGaN/GaN HEMTs and Its Application in C-Band High Power Amplifier MMIC

MiRNA-155 Biosensors Based on AlGaN/GaN Heterojunction Field Effect Transistors With an Au-SH-RNA Probe Gate

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