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2017 Symposium on VLSI Technology, 2017, p.T148-T149
- Nogami, T.
- Zhang, X.
- Kelly, J.
- Briggs, B.
- You, H.
- Patlolla, R.
- Huang, H.
- McLaughlin, P.
- Lee, J.
- Shobha, H.
- Nguyen, S.
- DeVries, S.
- Demarest, J.
- Lian, G.
- Li, J.
- Maniscalco, J.
- Bhosale, P.
- Lin, X.
- Peethala, B.
- Lanzillo, N.
- Kane, T.
- Yang, C. C.
- Motoyama, K.
- Sil, D.
- Spooner, T.
- Canaperi, D.
- Standaert, T.
- Lian, S.
- Grill, A.
- Edelstein, D.
- Paruchuri, V.
2017
Link zum Volltext
2022 IEEE International Interconnect Technology Conference (IITC), 2022, p.55-57
2022
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2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2016, p.40-42
2016
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2002 IEEE 33rd Annual IEEE Power Electronics Specialists Conference. Proceedings (Cat. No.02CH37289), 2002, Vol.4, p.1995-2000 vol.4
2002
- Link zum Volltext
2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2016, p.2-4
- Standaert, T.
- Beique, G.
- Chen, H.-C
- Chen, S.-T
- Hamieh, B.
- Lee, J.
- McLaughlin, P.
- McMahon, J.
- Mignot, Y.
- Mont, F.
- Motoyama, K.
- Nguyen, S.
- Patlolla, R.
- Peethala, B.
- Priyadarshini, D.
- Rizzolo, M.
- Saulnier, N.
- Shobha, H.
- Siddiqui, S.
- Spooner, T.
- Tang, H.
- van der Straten, O.
- Verduijn, E.
- Xu, Y.
- Zhang, X.
- Arnold, J.
- Canaperi, D.
- Colburn, M.
- Edelstein, D.
- Paruchuri, V.
- Bonilla, G.
2016
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2018 IEEE International Reliability Physics Symposium (IRPS), 2018, p.4F.1-1-4F.1-6
2018
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2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers, 2014, p.1-2
- Seo, K.-I
- Haran, B.
- Gupta, D.
- Guo, D.
- Standaert, T.
- Xie, R.
- Shang, H.
- Alptekin, E.
- Bae, D.-I
- Bae, G.
- Boye, C.
- Cai, H.
- Chanemougame, D.
- Chao, R.
- Cheng, K.
- Cho, J.
- Choi, K.
- Hamieh, B.
- Hong, J. G.
- Hook, T.
- Jang, L.
- Jung, J.
- Jung, R.
- Lee, D.
- Lherron, B.
- Kambhampati, R.
- Kim, B.
- Kim, H.
- Kim, K.
- Kim, T. S.
- Ko, S.-B
- Lie, F. L.
- Liu, D.
- Mallela, H.
- Mclellan, E.
- Mehta, S.
- Montanini, P.
- Mottura, M.
- Nam, J.
- Nam, S.
- Nelson, F.
- Ok, I.
- Park, C.
- Park, Y.
- Paul, A.
- Prindle, C.
- Ramachandran, R.
- Sankarapandian, M.
- Sardesai, V.
- Scholze, A.
- Seo, S.-C
- Shearer, J.
- Southwick, R.
- Sreenivasan, R.
- Stieg, S.
- Strane, J.
- Sun, X.
- Sung, M. G.
- Surisetty, C.
- Tsutsui, G.
- Tripathi, N.
- Vega, R.
- Waskiewicz, C.
- Weybright, M.
- Yeh, C.-C
- Bu, H.
- Burns, S.
- Canaperi, D.
- Celik, M.
- Colburn, M.
- Jagannathan, H.
- Kanakasabaphthy, S.
- Kleemeier, W.
- Liebmann, L.
- Mcherron, D.
- Oldiges, P.
- Paruchuri, V.
- Spooner, T.
- Stathis, J.
- Divakaruni, R.
- Gow, T.
- Iacoponi, J.
- Jenq, J.
- Sampson, R.
- Khare, M.
2014
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2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2016, p.92-94
2016
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2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), 2016, p.89-91
2016
- Link zum Volltext
2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.61-67
- Filippi, R.G.
- McGrath, J.F.
- Shaw, T.M.
- Murray, C.E.
- Rathore, H.S.
- McLaughlin, P.S.
- McGahay, V.
- Nicholson, L.
- Wang, P.-C.
- Lloyd, J.R.
- Lane, M.
- Rosenberg, R.
- Liu, X.
- Wang, Y.-Y.
- Landers, W.
- Spooner, T.
- Demarest, J.J.
- Engel, B.H.
- Gill, J.
- Goth, G.
- Barth, E.
- Biery, G.
- Davis, C.R.
- Wachnik, R.A.
- Goldblatt, R.
- Ivers, T.
- Swinton, A.
- Barile, C.
- Aitken, J.
2004
- Link zum Volltext
2010 IEEE International Interconnect Technology Conference, 2010, p.1-3
- Nogami, T
- Maniscalco, J
- Madan, A
- Flaitz, P
- DeHaven, P
- Parks, C
- Tai, L
- Lawrence, B St
- Davis, R
- Murphy, R
- Shaw, T
- Cohen, S
- Hu, C.-K
- Cabral, C
- Chiang, S
- Kelly, J
- Zaitz, M
- Schmatz, J
- Choi, S
- Tsumura, K
- Penny, C
- Chen, H.-C
- Canaperi, D
- Vo, T
- Ito, F
- Straten, O
- Simon, A
- Rhee, S.-H
- Kim, B.-Y
- Bolom, T
- Ryan, V
- Ma, P
- Ren, J
- Aubuchon, J
- Fine, J
- Kozlowski, P
- Spooner, T
- Edelstein, D
2010
- Link zum Volltext
2012 IEEE Power and Energy Society General Meeting, 2012, p.1-8
2012
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2012 International Electron Devices Meeting, 2012, p.33.7.1-33.7.4
2012
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MRS proceedings, 1995, Vol.391, Article 459
1995
Link zum Volltext
2010 International Electron Devices Meeting, 2010, p.33.5.1-33.5.4
- Nogami, T
- Bolom, T
- Simon, A
- Kim, B
- Hu, C
- Tsumura, K
- Madan, A
- Baumann, F
- Wang, Y
- Flaitz, P
- Parks, C
- DeHaven, P
- Davis, R
- Zaitz, M
- Lawrence, B S
- Murphy, R
- Tai, L
- Molis, S
- Rhee, S
- Usui, T
- Cabral, C
- Maniscalco, J
- Clevenger, L
- Li, B
- Christiansen, C
- Chen, F
- Lee, T
- Schmatz, J
- Shobha, H
- Ito, F
- Ryan, T
- Nguyen, S
- Canaperi, D
- Arnold, J
- Choi, S
- Cohen, S
- Liniger, E
- Chen, H
- Chen, S
- Vo, T
- Kelly, J
- Straten, O
- Penny, C
- Bonilla, G
- Kozlowski, P
- Spooner, T
- Edelstein, D
2010
- Link zum Volltext
2022 International Electron Devices Meeting (IEDM), 2022, p.12.1.1-12.1.4
2022
- Link zum Volltext
2020 IEEE International Interconnect Technology Conference (IITC), 2020, p.13-15
2020
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2006 International Interconnect Technology Conference, 2006, p.21-23
2006
- Link zum Volltext
2011 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, 2011, p.1-8
2011
- Link zum Volltext
2021 IEEE International Interconnect Technology Conference (IITC), 2021, p.1-3
2021
- Link zum Volltext
2018 IEEE International Interconnect Technology Conference (IITC), 2018, p.13-15
2018
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2017 IEEE International Interconnect Technology Conference (IITC), 2017, p.1-3
2017
- Link zum Volltext
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005, 2005, p.135-137
2005
- Link zum Volltext
2017 IEEE International Interconnect Technology Conference (IITC), 2017, p.1-3
2017
- Link zum Volltext
2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.9.4.1-9.4.4
2016
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