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Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

IEEE electron device letters, 2021-06, Vol.42 (6), p.796-799

2021

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IEEE_Xplore

Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain

Micro & nano letters, 2020-01, Vol.15 (1), p.41-46

2020

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Radiation Effects in AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1-1

2022

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IEEE_Xplore

2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

IEEE electron device letters, 2023-01, Vol.44 (1), p.13-16

2023

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IEEE_Xplore

GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection

IEEE electron device letters, 2024, Vol.45 (5), p.853-856

2024

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IEEE_Xplore

Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors

IEEE electron device letters, 2023-11, Vol.44 (11), p.1821-1824

2023

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IEEE_Xplore

Gate-Bias Induced RON Instability in p-GaN Power HEMTs

IEEE electron device letters, 2023-04, Vol.44 (6), p.1-1

2023

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Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition

Journal of alloys and compounds, 2021-02, Vol.854, p.157186, Article 157186

2021

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GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

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IEEE_Xplore

Highly Sensitive Narrowband AlGaN Solar Blind Ultraviolet Photodetectors using Polarization Induced Heterojunction Barrier

IEEE electron device letters, 2024-01, Vol.45 (4), p.1-1

2024

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IEEE_Xplore

Geiger-Mode Operation of AlGaN Avalanche Photodiodes at 255 nm

IEEE journal of quantum electronics, 2021-04, Vol.57 (2), p.1-6

2021

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IEEE_Xplore

Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3073-3078

2022

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IEEE_Xplore

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2262-2269

2022

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IEEE_Xplore

The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1120-1126

2022

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IEEE_Xplore

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.6035-6042

2022

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IEEE_Xplore

On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3623-3629

2022

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IEEE_Xplore

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.631-636

2022

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IEEE_Xplore

GaN High-Electron-Mobility-Transistor on Free- Standing GaN Substrate With Low Contact Resistance and State-of-the-Art fT × LG Value

IEEE transactions on electron devices, 2022-03, Vol.69 (3), p.968-972

2022

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IEEE_Xplore

Performance Assessment of AlGaN/GaN HEMT for Human Serum Albumin Detection Using Charge Deduction Methodology

IEEE sensors journal, 2024-05, Vol.24 (10), p.15784-15792

2024

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IEEE_Xplore

Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

Solar energy materials and solar cells, 2019-11, Vol.202, p.110153, Article 110153

2019

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On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2765-2770

2020

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IEEE_Xplore

T-ZnO/AlGaN/GaN HEMT Uric Acid Sensor-Sensitivity Analysis and Effect of Surface Wettability for Improved Performance

IEEE sensors journal, 2022-06, Vol.22 (12), p.1-1

2022

Link zum Volltext
IEEE_Xplore

360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

IEEE electron device letters, 2020-08, Vol.41 (8), p.1173-1176

2020

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IEEE_Xplore

Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination

IEEE transactions on nanotechnology, 2020, Vol.19, p.405-409

2020

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IEEE_Xplore

Antigen-Antibody Interaction-Based GaN HEMT Biosensor for C3G Detection

IEEE sensors journal, 2022-04, Vol.22 (7), p.6256-6262

2022

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IEEE_Xplore

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Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

Design and development of an AlGaN/GaN heterostructure nano-ATT oscillator: experimental feasibility studies in THz domain

Radiation Effects in AlGaN/GaN HEMTs

2.69 kV/2.11 mΩ⋅cm and Low Leakage p-GaN Stripe Array Gated Hybrid Anode Diodes With Low Turn-on Voltage

GaN-Based HEMT-Type VUV Phototransistors With Superior Triple-Mode Photodetection

Hot Electron-Induced Bremsstrahlung Emission in AlGaN/GaN Superlattice Castellated Field Effect Transistors

Gate-Bias Induced RON Instability in p-GaN Power HEMTs

Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition

GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

Highly Sensitive Narrowband AlGaN Solar Blind Ultraviolet Photodetectors using Polarization Induced Heterojunction Barrier

Geiger-Mode Operation of AlGaN Avalanche Photodiodes at 255 nm

Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

Interplay of Device Design and Carbon-Doped GaN Buffer Parameters in Determining Dynamic in AlGaN/GaN HEMTs

On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

GaN High-Electron-Mobility-Transistor on Free- Standing GaN Substrate With Low Contact Resistance and State-of-the-Art fT × LG Value

Performance Assessment of AlGaN/GaN HEMT for Human Serum Albumin Detection Using Charge Deduction Methodology

Enhanced production rates of hydrogen generation and carbon dioxide reduction using aluminum gallium nitride/gallium nitride heteroepitaxial films as photoelectrodes in seawater

On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

T-ZnO/AlGaN/GaN HEMT Uric Acid Sensor-Sensitivity Analysis and Effect of Surface Wettability for Improved Performance

360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination

Antigen-Antibody Interaction-Based GaN HEMT Biosensor for C3G Detection

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