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Recent Developments, Reliability Issues, Challenges and Applications of GaN HEMT Technology

IEEE Electron Devices Reviews, 2024-11, p.1-15

2024

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Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiNx Passivation

IEEE electron device letters, 2024-11, Vol.45 (11), p.2074-2077

2024

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Demonstration of Effective Intrinsic Electron Velocity >107 cm/s in Ultrawide Bandgap Al₀.₆₄Ga₀.₃₆N Channel HEMTs

IEEE transactions on electron devices, 2024-11, Vol.71 (11), p.6604-6608

2024

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Achieving \ge 1200-V High-Performance GaN HEMTs on Sapphire With Carbon-Doped Buffer

IEEE transactions on electron devices, 2024-10, p.1-7

2024

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AlGaN/GaN HEMT-based MHM Ultraviolet Phototransistor with Bent-Gate Structure

IEEE electron device letters, 2024-10, p.1-1

2024

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Rapid on-wafer quality screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors using short-term stress and electroluminescence

IEEE electron device letters, 2024-10, p.1-1

2024

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Effect of Gate Structure on the Performances of Lateral AlGaN/GaN High-Electron-Mobility Avalanche-Transit-Time Transistor

IEEE transactions on computer-aided design of integrated circuits and systems, 2024-10, p.1-1

2024

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Optical Mapping of Local Threshold Voltage With Micrometer Resolution in AlGaN/GaN HEMTs

IEEE electron device letters, 2024-10, Vol.45 (10), p.1721-1723

2024

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Channel to Channel Thermal Coupling of Double-Channel GaN-based HEMTs

2024 30th International Workshop on Thermal Investigations of ICs and Systems (THERMINIC), 2024, p.1-4

2024

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Impact of Passivation on Thermal Stability of AlGaN/GaN HEMTs Under High-Temperature Annealing

2024 IEEE International Conference on IC Design and Technology (ICICDT), 2024, p.1-4

2024

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AlGaN/GaN Grating-Gate Plasmonic Crystals towards Tunable Terahertz Filters and Modulators

2024 54th European Microwave Conference (EuMC), 2024, p.385-388

2024

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Demonstration of Ultra Low 2DEG Sheet Resistance Using Al-Enriched AlGaN Layer in the AlXGa1-XN/AlN/GaN Heterojunction

2024 IEEE European Solid-State Electronics Research Conference (ESSERC), 2024, p.237-240

2024

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Parasitic Transistor with Hole Injection Current Modeling of AlGaN/GaN Ridge HEMTs

2024 International Conference on Electrical, Computer and Energy Technologies (ICECET, 2024, p.1-6

2024

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Investigation of AlGaN/GaN HEMT Device Performance with Variation of GaN Cap Layer Thickness along with Doping Concentration

2024 15th International Conference on Computing Communication and Networking Technologies (ICCCNT), 2024, p.1-6

2024

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Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes

2024 Device Research Conference (DRC), 2024, p.1-2

2024

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1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate

IEEE electron device letters, 2024-06, Vol.45 (6), p.1048-1051

2024

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Optimized Contact Resistance and Device Performance of AlGaN/GaN HEMTs by Sub-10 nm Nano-Hole Patterns

2024 Conference on Lasers and Electro-Optics (CLEO), 2024, p.1-2

2024

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Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1805-1811

2024

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Corrections to "Modeling of the Gate Bias- Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs"

IEEE access, 2024, Vol.12, p.150485-150485

2024

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Acoustoelectric Effect in Sezawa Mode Saw Devices on Algan/Gan/Sic Heterostructure AT 9.7 GHZ

2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS), 2024, p.1079-1082

2024

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AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.981-987

2024

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Gate Engineered AlGaN/GaN HEMT to Reduce the Trapping Effects and Improve Reliability

2024 International Conference on Wireless Communications Signal Processing and Networking (WiSPNET), 2024, p.1-5

2024

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Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes

2023 Device Research Conference (DRC), 2023, p.1-2

Fleetwood, Daniel M.

2023

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Gate-Bias Induced RON Instability in p-GaN Power HEMTs

IEEE electron device letters, 2023-06, Vol.44 (6), p.915-918

2023

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Efficacy of \Pi -Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.1-4

2023

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Recent Developments, Reliability Issues, Challenges and Applications of GaN HEMT Technology

Effective Mitigation of Persistent Photoconductivity in AlGaN Solar-Blind Field-Effect Phototransistors via In-Situ SiNx Passivation

Demonstration of Effective Intrinsic Electron Velocity >107 cm/s in Ultrawide Bandgap Al₀.₆₄Ga₀.₃₆N Channel HEMTs

Achieving \ge 1200-V High-Performance GaN HEMTs on Sapphire With Carbon-Doped Buffer

AlGaN/GaN HEMT-based MHM Ultraviolet Phototransistor with Bent-Gate Structure

Rapid on-wafer quality screening of AlGaN/GaN Superlattice Castellated Field Effect Transistors using short-term stress and electroluminescence

Effect of Gate Structure on the Performances of Lateral AlGaN/GaN High-Electron-Mobility Avalanche-Transit-Time Transistor

Optical Mapping of Local Threshold Voltage With Micrometer Resolution in AlGaN/GaN HEMTs

Channel to Channel Thermal Coupling of Double-Channel GaN-based HEMTs

Impact of Passivation on Thermal Stability of AlGaN/GaN HEMTs Under High-Temperature Annealing

AlGaN/GaN Grating-Gate Plasmonic Crystals towards Tunable Terahertz Filters and Modulators

Demonstration of Ultra Low 2DEG Sheet Resistance Using Al-Enriched AlGaN Layer in the AlXGa1-XN/AlN/GaN Heterojunction

Parasitic Transistor with Hole Injection Current Modeling of AlGaN/GaN Ridge HEMTs

Investigation of AlGaN/GaN HEMT Device Performance with Variation of GaN Cap Layer Thickness along with Doping Concentration

Improved Electrical Characteristics of GaN-based HEMTs with Rationally Designed Compositionally Graded AlGaN Back Barrier and Passivation Schemes

1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate

Optimized Contact Resistance and Device Performance of AlGaN/GaN HEMTs by Sub-10 nm Nano-Hole Patterns

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Corrections to "Modeling of the Gate Bias- Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs"

Acoustoelectric Effect in Sezawa Mode Saw Devices on Algan/Gan/Sic Heterostructure AT 9.7 GHZ

AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation

Gate Engineered AlGaN/GaN HEMT to Reduce the Trapping Effects and Improve Reliability

Radiation Effects in AlGaN/GaN HEMTs and Ga2O3 Diodes

Gate-Bias Induced RON Instability in p-GaN Power HEMTs

Efficacy of \Pi -Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

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