Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Sortiert nach
    Datensatz exportieren als...
  • BibTeX
Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT
IEEE electron device letters, 2021-06, Vol.42 (6), p.796-799
2021
Open Access
    Datensatz exportieren als...
  • BibTeX
Gate-Bias Induced RON Instability in p-GaN Power HEMTs
IEEE electron device letters, 2023-06, Vol.44 (6), p.915-918
2023
Link zum Volltext
Verfügbarkeit prüfen
    Datensatz exportieren als...
  • BibTeX
GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform
IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1
2022
    Datensatz exportieren als...
  • BibTeX
Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs
IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3073-3078
2022
    Datensatz exportieren als...
  • BibTeX
The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method
IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1120-1126
2022
    Datensatz exportieren als...
  • BibTeX
On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs
IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3623-3629
2022
    Datensatz exportieren als...
  • BibTeX
Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation
IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.631-636
2022
Open Access
    Datensatz exportieren als...
  • BibTeX
Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors
IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452
2019
Link zum Volltext
Verfügbarkeit prüfen
    Datensatz exportieren als...
  • BibTeX
On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion
IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2765-2770
2020
    Datensatz exportieren als...
  • BibTeX
360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications
IEEE electron device letters, 2020-08, Vol.41 (8), p.1173-1176
2020
    Datensatz exportieren als...
  • BibTeX
Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination
IEEE transactions on nanotechnology, 2020, Vol.19, p.405-409
2020
    Datensatz exportieren als...
  • BibTeX
AlGaN/GaN Schottky-Gate HEMTs With UV/O₃-Treated Gate Interface
IEEE electron device letters, 2020-10, Vol.41 (10), p.1488-1491
2020
    Datensatz exportieren als...
  • BibTeX
Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering
IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2544-2550
2019
    Datensatz exportieren als...
  • BibTeX
Comparative Study on Charge Trapping Induced } Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment
IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5343-5349
2018
    Datensatz exportieren als...
  • BibTeX
Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures
IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4800-4806
2018
    Datensatz exportieren als...
  • BibTeX
Carrier Transport Mechanisms Underlying the Bidirectional }} Shift in p-GaN Gate HEMTs Under Forward Gate Stress
IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.876-882
2019
Open Access
    Datensatz exportieren als...
  • BibTeX
Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer
IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3848-3854
2018
Link zum Volltext
Verfügbarkeit prüfen
Open Access
    Datensatz exportieren als...
  • BibTeX
Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air
IEEE journal of the Electron Devices Society, 2019, Vol.7, p.931-935
2019
Link zum Volltext
Verfügbarkeit prüfen
Open Access
    Datensatz exportieren als...
  • BibTeX
Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"
IEEE journal of the Electron Devices Society, 2020, Vol.8, p.716-716
2020
Link zum Volltext
Verfügbarkeit prüfen
Open Access
    Datensatz exportieren als...
  • BibTeX
High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate
IEEE journal of the Electron Devices Society, 2020, Vol.8, p.481-484
2020
Link zum Volltext
Verfügbarkeit prüfen
    Datensatz exportieren als...
  • BibTeX
Through recessed and regrowth gate technology for realizing process stability of GaN-GITs
2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.23-26
2016
    Datensatz exportieren als...
  • BibTeX
Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length
IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1805-1811
2024
    Datensatz exportieren als...
  • BibTeX
Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs
IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.2612-2615
2023
    Datensatz exportieren als...
  • BibTeX
10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes
IEEE electron device letters, 2021-06, Vol.42 (6), p.808-811
2021
    Datensatz exportieren als...
  • BibTeX
Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process
IEEE electron device letters, 2022-04, Vol.43 (4), p.529-532
2022
1 – 25 von 231
Suche als RSS-Feed
Aktive Filter
KollektionIngentaConnect Journals
ThemaEngineering
ThemaModfets
ThemaWide Band Gap Semiconductors
Suchergebnisse filtern
Filter anzeigen