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2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS), 2021, p.82-85

2021

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Time Dependent Early breakdown of AIGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs Under Fast Cyclic Transient Stress

2018 IEEE International Electron Devices Meeting (IEDM), 2018, p.34.6.1-34.6.4

2018

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IEEE_Xplore

Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-Chip

2017 IEEE 5th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), 2017, p.265-272

2017

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High-efficiency, high-breakdown AlGaN/GaN HEMTs with lifetimes beyond 20 years

2008 Device Research Conference, 2008, p.133-134

2008

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IEEE_Xplore

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10 kV, 39 mΩ·cm2 Multi-Channel AlGaN/GaN Schottky Barrier Diodes

1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate

First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates

Comparison of GaN HEMTs on Diamond and SiC Substrates

Thermal performance assessment in AlGaN/GaN structures by microsensor integration

Elimination of Leakage in GaN-on-Diamond

Enhancement-mode gan hybrid mos-hemts with ron,sp of 20 mω-cm2

On-Resistance Modulation of High Voltage GaN HEMT on Sapphire Substrate Under High Applied Voltage

Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE

Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3- \mu T-gate AlGaN/GaN HEMTs on Silicon by () Treatment

Low specific ON-resistance and high Figure-of-merit AlGaN/GaN HEMTs on Si substrate with non-gold metal stacks

Breakdown mechanism in AlGaN/GaN HEMTs on Si substrate

On the variation of the 2DEG charge density with the density of the surface donor traps in AiGaN/GaN transistors

High-Temperature Performance of AlGaN/GaN MOSHEMT With \hbox Gate Insulator Fabricated on Si (111) Substrate

GaN-on-Si technology, a new approach for advanced devices in energy and communications

Record Breakdown Voltage (2200 V) of GaN DHFETs on Si With 2- \mu\hbox Buffer Thickness by Local Substrate Removal

High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With \hbox\hbox Gate Insulator Grown by ALD

Analysis of AlGaN/GaN HEMT with Lg=70 nm for Satellite application

Current status of high-power GaN HEMTs and future prospects on AlN-based devices

Unpassivated AlGaN-GaN HEMTs with minimal RF dispersion grown by plasma-assisted MBE on semi-insulating 6H-SiC substrates

Self-aligned enhancement-mode AlGaN/GaN HEMTs using 25 keV fluorine ion implantation

High Quality AlGaN/GaN HEMT Homo-epitaxy on 4-inch Homebred GaN Substrate by MOCVD

Time Dependent Early breakdown of AIGaN/GaN Epi Stacks and Shift in SOA Boundary of HEMTs Under Fast Cyclic Transient Stress

Substrate biasing effects in a high-voltage, monolithically-integrated half-bridge GaN-Chip

High-efficiency, high-breakdown AlGaN/GaN HEMTs with lifetimes beyond 20 years

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