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Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

IEEE electron device letters, 2021-06, Vol.42 (6), p.796-799

2021

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Gate-Bias Induced RON Instability in p-GaN Power HEMTs

IEEE electron device letters, 2023-06, Vol.44 (6), p.915-918

2023

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On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3623-3629

2022

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Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.631-636

2022

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On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2765-2770

2020

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360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

IEEE electron device letters, 2020-08, Vol.41 (8), p.1173-1176

2020

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Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination

IEEE transactions on nanotechnology, 2020, Vol.19, p.405-409

2020

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AlGaN/GaN Schottky-Gate HEMTs With UV/O₃-Treated Gate Interface

IEEE electron device letters, 2020-10, Vol.41 (10), p.1488-1491

2020

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Successive Multi-Stage Compliance-Ramp Voltage Sweep Methodology (MSC-RVS) for Understanding the Evolution of Gate Breakdown Mechanisms in p-GaN HEMTs

IEEE access, 2024, Vol.12, p.133499-133508

2024

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Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2544-2550

2019

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Comparative Study on Charge Trapping Induced } Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5343-5349

2018

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Carrier Transport Mechanisms Underlying the Bidirectional }} Shift in p-GaN Gate HEMTs Under Forward Gate Stress

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.876-882

2019

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Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3848-3854

2018

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Mechanism of Threshold Voltage Shift in -GaN Gate AlGaN/GaN Transistors

IEEE electron device letters, 2018-08, Vol.39 (8), p.1145-1148

2018

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High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.481-484

2020

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Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.23-26

2016

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Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1805-1811

2024

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Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.2612-2615

2023

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Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process

IEEE electron device letters, 2022-04, Vol.43 (4), p.529-532

2022

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Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

IEEE transactions on electron devices, 2024-10, p.1-7

2024

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Optical Mapping of Local Threshold Voltage With Micrometer Resolution in AlGaN/GaN HEMTs

IEEE electron device letters, 2024-10, Vol.45 (10), p.1721-1723

2024

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Acoustoelectric Effect in Sezawa Mode Saw Devices on Algan/Gan/Sic Heterostructure AT 9.7 GHZ

2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS), 2024, p.1079-1082

2024

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Small-Signal Analysis of Channel Resistance RL at Low Gate Bias Voltages in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6033-6038

2021

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Demonstration of Effective Intrinsic Electron Velocity > 10 ^} cm/s in Ultrawide Bandgap Al } Ga } N Channel HEMTs

IEEE transactions on electron devices, 2024-10, p.1-5

2024

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GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping

IEEE electron device letters, 2022-05, Vol.43 (5), p.697-700

2022

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Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

Gate-Bias Induced RON Instability in p-GaN Power HEMTs

On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination

AlGaN/GaN Schottky-Gate HEMTs With UV/O₃-Treated Gate Interface

Successive Multi-Stage Compliance-Ramp Voltage Sweep Methodology (MSC-RVS) for Understanding the Evolution of Gate Breakdown Mechanisms in p-GaN HEMTs

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

Comparative Study on Charge Trapping Induced } Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment

Carrier Transport Mechanisms Underlying the Bidirectional }} Shift in p-GaN Gate HEMTs Under Forward Gate Stress

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

Mechanism of Threshold Voltage Shift in -GaN Gate AlGaN/GaN Transistors

High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

Through recessed and regrowth gate technology for realizing process stability of GaN-GITs

Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length

Efficacy of Π-Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hysteresis by Functioning In-situ SiNx in Regrowth Process

Suppressing the Leakage of GaN HEMTs on Single-Crystalline AlN Templates by Buffer Optimization

Optical Mapping of Local Threshold Voltage With Micrometer Resolution in AlGaN/GaN HEMTs

Acoustoelectric Effect in Sezawa Mode Saw Devices on Algan/Gan/Sic Heterostructure AT 9.7 GHZ

Small-Signal Analysis of Channel Resistance RL at Low Gate Bias Voltages in AlGaN/GaN HEMTs

Demonstration of Effective Intrinsic Electron Velocity > 10 ^} cm/s in Ultrawide Bandgap Al } Ga } N Channel HEMTs

GaN Non-Volatile Memory Based on Junction Barrier-Controlled Bipolar Charge Trapping

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