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Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

IEEE electron device letters, 2021-06, Vol.42 (6), p.796-799

2021

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360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

IEEE electron device letters, 2020-08, Vol.41 (8), p.1173-1176

2020

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Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination

IEEE transactions on nanotechnology, 2020, Vol.19, p.405-409

2020

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Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

2020 4th International Conference on Trends in Electronics and Informatics (ICOEI)(48184), 2020, p.137-142

2020

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Efficacy of \Pi -Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2023-05, Vol.70 (5), p.1-4

2023

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Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

IEEE electron device letters, 2015-10, Vol.36 (10), p.1011-1014

2015

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L-Band 10-kW AlGaN/GaN HEMT with operating voltage of 100V

2020 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA), 2020, p.114-115

2020

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10 A/950 V switching of GaN-channel HFETs with non-doped AlN buffer

2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023, p.374-377

2023

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Stress-Engineered AlGaN/GaN High Electron Mobility Transistors Design

2021 Devices for Integrated Circuit (DevIC), 2021, p.471-473

2021

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Evaluation of Device Performance on AlGaN/InGaN/GaN High Electron Mobility Transistors (HEMTs) using TCAD Software

2019 IEEE International Conference on Clean Energy and Energy Efficient Electronics Circuit for Sustainable Development (INCCES), 2019, p.1-3

2019

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Strain-Induced Ionic Polarization Dependent AlGaN/GaN High Electron Mobility Transistor

2020 4th International Conference on Trends in Electronics and Informatics (ICOEI)(48184), 2020, p.463-466

2020

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Two Dimensional Analytical Modelling of DC IV Collapse of Drain Current in AlGaN/GaN HEMTs

2019 IEEE International Conference on Electrical, Computer and Communication Technologies (ICECCT), 2019, p.1-5

2019

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Evaluation of Charge Density and Sheet Carrier Concentration in the 2DEG Area of AlGaN/AlN High Electron Mobility Transistors (HEMTs)

2019 IEEE International Conference on Intelligent Techniques in Control, Optimization and Signal Processing (INCOS), 2019, p.1-4

2019

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Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance

2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2016, p.95-98

2016

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Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

IEEE electron device letters, 2014-11, Vol.35 (11), p.1094-1096

2014

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Effect of metal electrode edge irregularities on breakdown voltages of AlGaN/GaN HEMTs

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), 2016, p.1-2

2016

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Terahertz detection by AlGaN/GaN HEMTs at high intensity

2016 21st International Conference on Microwave, Radar and Wireless Communications (MIKON), 2016, p.1-3

2016

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Performance of the AlGaN HEMT structure with a gate extension

IEEE transactions on electron devices, 2004-02, Vol.51 (2), p.292-295

2004

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Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3- \mu T-gate AlGaN/GaN HEMTs on Silicon by () Treatment

IEEE electron device letters, 2013-11, Vol.34 (11), p.1364-1366

2013

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Localization and analysis of surface charges trapped in AlGaN/GaN HEMTs using multiple secondary MIS gates

2018 48th European Solid-State Device Research Conference (ESSDERC), 2018, p.22-25

2018

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Application-based review of GaN HFETs

2014 IEEE Workshop on Wide Bandgap Power Devices and Applications, 2014, p.24-29

2014

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3,000+ Hours continuous operation of GaN-on-Diamond HEMTs at 350°c channel temperature

2014 Semiconductor Thermal Measurement and Management Symposium (SEMI-THERM), 2014, p.242-246

2014

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RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high "Figure of Merit"

2014 2nd International Conference on Devices, Circuits and Systems (ICDCS), 2014, p.1-4

2014

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Impact of hot electrons on the reliability of AlGaN/GaN High Electron Mobility Transistors

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.2C.2.1-2C.2.5

2012

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State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers

2008 IEEE Compound Semiconductor Integrated Circuits Symposium, 2008, p.1-4

2008

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Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination

Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

Efficacy of \Pi -Gate in RF Power Performance of Thin GaN Buffer AlGaN/GaN HEMTs

Hot-Electron Degradation of AlGaN/GaN High-Electron Mobility Transistors During RF Operation: Correlation With GaN Buffer Design

L-Band 10-kW AlGaN/GaN HEMT with operating voltage of 100V

10 A/950 V switching of GaN-channel HFETs with non-doped AlN buffer

Stress-Engineered AlGaN/GaN High Electron Mobility Transistors Design

Evaluation of Device Performance on AlGaN/InGaN/GaN High Electron Mobility Transistors (HEMTs) using TCAD Software

Strain-Induced Ionic Polarization Dependent AlGaN/GaN High Electron Mobility Transistor

Two Dimensional Analytical Modelling of DC IV Collapse of Drain Current in AlGaN/GaN HEMTs

Evaluation of Charge Density and Sheet Carrier Concentration in the 2DEG Area of AlGaN/AlN High Electron Mobility Transistors (HEMTs)

Impact of Mg out-diffusion and activation on the p-GaN gate HEMT device performance

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

Effect of metal electrode edge irregularities on breakdown voltages of AlGaN/GaN HEMTs

Terahertz detection by AlGaN/GaN HEMTs at high intensity

Performance of the AlGaN HEMT structure with a gate extension

Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3- \mu T-gate AlGaN/GaN HEMTs on Silicon by () Treatment

Localization and analysis of surface charges trapped in AlGaN/GaN HEMTs using multiple secondary MIS gates

Application-based review of GaN HFETs

3,000+ Hours continuous operation of GaN-on-Diamond HEMTs at 350°c channel temperature

RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high "Figure of Merit"

Impact of hot electrons on the reliability of AlGaN/GaN High Electron Mobility Transistors

State of the Art 58W, 38% PAE X-Band AlGaN/GaN HEMTs Microstrip MMIC Amplifiers

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