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TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

IEEE electron device letters, 2008-10, Vol.29 (10), p.1098-1100

2008

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Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2106-2112

2008

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Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

IEEE transactions on power electronics, 2008-03, Vol.23 (2), p.692-697

2008

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Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

2020 4th International Conference on Trends in Electronics and Informatics (ICOEI)(48184), 2020, p.137-142

2020

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Theoretical Study of Electron Confinement in Submicrometer GaN HFETs Using a Thermally Self-Consistent Monte Carlo Method

IEEE transactions on electron devices, 2008-04, Vol.55 (4), p.945-953

2008

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Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

Proceedings of the 2015 International Conference on Microelectronic Test Structures, 2015, p.163-168

2015

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An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

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Airy Function-Based Model for 2-DEG Charge and Surface Potential in N-Polar Gallium Nitride Heterostructures

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3861-3868

2022

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Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1554-1561

2004

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First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates

2022 Device Research Conference (DRC), 2022, p.1-2

2022

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12 W/mm AlGaN-GaN HFETs on silicon substrates

IEEE electron device letters, 2004-07, Vol.25 (7), p.459-461

2004

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Comparison of GaN HEMTs on Diamond and SiC Substrates

IEEE electron device letters, 2007-11, Vol.28 (11), p.948-950

2007

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Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type -GaN Gate HEMTs

IEEE transactions on electron devices, 2019-08, Vol.66 (8), p.3453-3458

2019

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Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO } as Gate Dielectric

IEEE electron device letters, 2019-02, Vol.40 (2), p.295-298

2019

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AlGaN/GaN HEMTs on SiC with fT of over 120 GHz

IEEE electron device letters, 2002-08, Vol.23 (8), p.455-457

2002

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AlGaN/GaN Metal-Oxide-Semiconductor Heterojunction Field-Effect Transistor Integrated With Clamp Circuit to Enable Normally-Off Operation

IEEE electron device letters, 2015-06, Vol.36 (6), p.540-542

2015

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10-W/mm AlGaN-GaN HFET with a field modulating plate

IEEE electron device letters, 2003-05, Vol.24 (5), p.289-291

2003

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High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs With 626 MW/ \mathrm^ Figure of Merit

IEEE transactions on electron devices, 2015-03, Vol.62 (3), p.776-781

2015

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Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

IEEE electron device letters, 2014-11, Vol.35 (11), p.1094-1096

2014

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Gallium nitride Schottky and MIS power switch performance comparison for 35 GHz applications

2015 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop (INMMiC), 2015, p.1-3

2015

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HEMT-based read-out of a thickness-mode AlGaN/GaN resonator

2013 IEEE International Electron Devices Meeting, 2013, p.18.3.1-18.3.4

2013

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High- f} High Johnson's Figure-of-Merit 0.2- \mu Gate AlGaN/GaN HEMTs on Silicon Substrate With /} Passivation

IEEE electron device letters, 2014-03, Vol.35 (3), p.315-317

2014

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Elimination of Leakage in GaN-on-Diamond

2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 2016, p.1-4

2016

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AlGaN/GaN MIS-HFETs with fT of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers

IEEE electron device letters, 2006-01, Vol.27 (1), p.16-18

2006

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Enhancement-mode gan hybrid mos-hemts with ron,sp of 20 mω-cm2

2008 20th International Symposium on Power Semiconductor Devices and IC's, 2008, p.295-298

2008

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TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

Comparative Study of AlGaN/GaN, InAlN/GaN and AlGaAs/GaAs based High Electron Mobilty Transistors Using Silvaco for High-Frequency Applications

Theoretical Study of Electron Confinement in Submicrometer GaN HFETs Using a Thermally Self-Consistent Monte Carlo Method

Novel sheet resistance measurement on AlGaN/GaN HEMT wafer adapted from four-point probe technique

An AlN/Al0.85Ga0.15N high electron mobility transistor

Airy Function-Based Model for 2-DEG Charge and Surface Potential in N-Polar Gallium Nitride Heterostructures

Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates

12 W/mm AlGaN-GaN HFETs on silicon substrates

Comparison of GaN HEMTs on Diamond and SiC Substrates

Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type -GaN Gate HEMTs

Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO } as Gate Dielectric

AlGaN/GaN HEMTs on SiC with fT of over 120 GHz

AlGaN/GaN Metal-Oxide-Semiconductor Heterojunction Field-Effect Transistor Integrated With Clamp Circuit to Enable Normally-Off Operation

10-W/mm AlGaN-GaN HFET with a field modulating plate

High-Performance Enhancement-Mode Al2O3/AlGaN/GaN-on-Si MISFETs With 626 MW/ \mathrm^ Figure of Merit

Investigation of Surface- and Buffer-Induced Current Collapse in GaN High-Electron Mobility Transistors Using a Soft Switched Pulsed \(I-V\) Measurement

Gallium nitride Schottky and MIS power switch performance comparison for 35 GHz applications

HEMT-based read-out of a thickness-mode AlGaN/GaN resonator

High- f} High Johnson's Figure-of-Merit 0.2- \mu Gate AlGaN/GaN HEMTs on Silicon Substrate With /} Passivation

Elimination of Leakage in GaN-on-Diamond

AlGaN/GaN MIS-HFETs with fT of 163 GHz using cat-CVD SiN gate-insulating and passivation Layers

Enhancement-mode gan hybrid mos-hemts with ron,sp of 20 mω-cm2

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