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Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

IEEE electron device letters, 2021-06, Vol.42 (6), p.796-799

2021

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IEEE_Xplore

Gate-Bias Induced RON Instability in p-GaN Power HEMTs

IEEE electron device letters, 2023-06, Vol.44 (6), p.915-918

2023

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GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

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IEEE_Xplore

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2262-2269

2022

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IEEE_Xplore

Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

IEEE transactions on electron devices, 2022-06, Vol.69 (6), p.3073-3078

2022

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IEEE_Xplore

The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

IEEE transactions on nuclear science, 2022-05, Vol.69 (5), p.1120-1126

2022

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IEEE_Xplore

On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs

IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3623-3629

2022

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IEEE_Xplore

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.631-636

2022

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IEEE_Xplore

On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

IEEE transactions on electron devices, 2020-07, Vol.67 (7), p.2765-2770

2020

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IEEE_Xplore

360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

IEEE electron device letters, 2020-08, Vol.41 (8), p.1173-1176

2020

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IEEE_Xplore

Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination

IEEE transactions on nanotechnology, 2020, Vol.19, p.405-409

2020

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IEEE_Xplore

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

IEEE electron device letters, 2008-10, Vol.29 (10), p.1098-1100

2008

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IEEE_Xplore

AlGaN/GaN Schottky-Gate HEMTs With UV/O₃-Treated Gate Interface

IEEE electron device letters, 2020-10, Vol.41 (10), p.1488-1491

2020

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IEEE_Xplore

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.444-452

2019

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Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

IEEE transactions on electron devices, 2019-06, Vol.66 (6), p.2544-2550

2019

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IEEE_Xplore

Comparative Study on Charge Trapping Induced } Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment

IEEE transactions on electron devices, 2018-12, Vol.65 (12), p.5343-5349

2018

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IEEE_Xplore

Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

IEEE transactions on electron devices, 2018-11, Vol.65 (11), p.4800-4806

2018

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IEEE_Xplore

Carrier Transport Mechanisms Underlying the Bidirectional }} Shift in p-GaN Gate HEMTs Under Forward Gate Stress

IEEE transactions on electron devices, 2019-02, Vol.66 (2), p.876-882

2019

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IEEE_Xplore

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

IEEE transactions on electron devices, 2018-09, Vol.65 (9), p.3848-3854

2018

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Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.931-935

2019

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Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.716-716

2020

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Mechanism of Threshold Voltage Shift in -GaN Gate AlGaN/GaN Transistors

IEEE electron device letters, 2018-08, Vol.39 (8), p.1145-1148

2018

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IEEE_Xplore

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2106-2112

2008

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IEEE_Xplore

High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

IEEE journal of the Electron Devices Society, 2020, Vol.8, p.481-484

2020

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Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

IEEE transactions on power electronics, 2008-03, Vol.23 (2), p.692-697

2008

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IEEE_Xplore

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Power Scaling of Graded-Channel GaN HEMTs With Mini-Field-Plate T-gate and 156 GHz fT

Gate-Bias Induced RON Instability in p-GaN Power HEMTs

GaN Ring Oscillators Operational at 500 °C Based on a GaN-on-Si Platform

Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions

Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs

The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method

On the Onset of Breakdown of the Virtual Gate in AlGaN/GaN HEMTs

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

On-Wafer Fast Evaluation of Failure Mechanism of 0.25-μm AlGaN/GaN HEMTs: Evidence of Sidewall Indiffusion

360 GHz fMAX Graded-Channel AlGaN/GaN HEMTs for mmW Low-Noise Applications

Low-Frequency Noise Characterization of AlGaN/GaN HEMTs and MIS-HEMTs Under UV Illumination

TEM Observation of Crack- and Pit-Shaped Defects in Electrically Degraded GaN HEMTs

AlGaN/GaN Schottky-Gate HEMTs With UV/O₃-Treated Gate Interface

Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By }} O Based Gate Stack Engineering

Comparative Study on Charge Trapping Induced } Shift for GaN-Based MOS-HEMTs With and Without Thermal Annealing Treatment

Theoretical Evaluation of the Effects of Isolation-Feature Size and Geometry on the Built-In Strain and 2-D Electron Gas Density of AlGaN/GaN Heterostructures

Carrier Transport Mechanisms Underlying the Bidirectional }} Shift in p-GaN Gate HEMTs Under Forward Gate Stress

Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- Passivation Layer and High Acceptor Density in Buffer Layer

Stable Operation of AlGaN/GaN HEMTs for 25 h at 400°C in air

Correction to "Stable Operation of AlGaN/GaN HEMTs for 25 Hours at 400°C in Air"

Mechanism of Threshold Voltage Shift in -GaN Gate AlGaN/GaN Transistors

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

High fmax × LG Product of AlGaN/GaN HEMTs on Silicon With Thick Rectangular Gate

Switching Characteristics of GaN HFETs in a Half Bridge Package for High Temperature Applications

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