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Corrections to "Modeling of the Gate Bias- Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs"

IEEE access, 2024, Vol.12, p.150485-150485

2024

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An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied physics letters, 2016-07, Vol.109 (3)

2016

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Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

IEEE transactions on electron devices, 2004-10, Vol.51 (10), p.1554-1561

2004

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On the modelling of interface roughness scattering in AlGaN/GaN heterostructures

2020 43rd International Convention on Information, Communication and Electronic Technology (MIPRO), 2020, p.22-27

2020

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Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure

IEEE transactions on electron devices, 2017-04, Vol.64 (4), p.1505-1510

2017

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Theoretical Study of Double-Heterojunction AlGaN/GaN/InGaN/δ-doped HEMTs for Improved Transconductance Linearity

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2020, p.245-248

Yu, Tsung-Hsing

2020

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Optimization of / High Electron Mobility Heterostructures for High-Power/Frequency Performances

IEEE transactions on electron devices, 2013-10, Vol.60 (10), p.3105-3111

2013

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Performance of the AlGaN HEMT structure with a gate extension

IEEE transactions on electron devices, 2004-02, Vol.51 (2), p.292-295

2004

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Fabrication of Enhancement-Mode AlGaN/GaN MISHEMTs by Using Fluorinated \hbox\hbox as Gate Dielectrics

IEEE electron device letters, 2011-10, Vol.32 (10), p.1373-1375

2011

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Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

IEEE electron device letters, 2002-02, Vol.23 (2), p.76-78

2002

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AlGaN/GaN Grating-Gate Plasmonic Crystals towards Tunable Terahertz Filters and Modulators

2024 54th European Microwave Conference (EuMC), 2024, p.385-388

2024

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Large-signal performance of deep submicrometer AlGaN/AlN/GaNHEMTs with a field-modulating plate

IEEE transactions on electron devices, 2005-08, Vol.52 (8), p.1689-1692

2005

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Effect of High-Temperature Annealed Al2O3 insulator on GaN MIS-HEMTs performance

2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK), 2022, p.1-2

2022

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AlGaN/GaN MODFETs on semi-insulating SiC with 3W/mm at 20GHz

Electronics letters, 2000-07, Vol.36 (14), p.1-1

2000

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High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

Electronics letters, 2000-03, Vol.36 (5), p.1-1

2000

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Robust Forward Gate Bias TDDB Stability in Enhancement-mode Fully Recessed Gate GaN MIS-FETs with ALD Al2O3Gate Dielectric

2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), 2020, p.1-4

2020

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Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications

2018 13th European Microwave Integrated Circuits Conference (EuMIC), 2018, p.5-8

2018

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Differential negative resistance effect of output characteristics in deep sub-micrometer wurtzite AlGaN/GaN MODFETs

Science China. Information sciences, 2003-06, Vol.46 (3), p.187-198

GUO, Baozeng

2003

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Full Band Monte Carlo Simulation of Wurtzite AlGaN/GaN MODFETs

Journal of computational electronics, 2002-10, Vol.1 (3), p.309-311

2002

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DC, RF and noise figure analysis of p+ In0.2Ga0.8N cap gate AlGaN DH-HEMT

2017 Devices for Integrated Circuit (DevIC), 2017, p.708-710

2017

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Thermal and threshold voltage analysis of GaN MOSFET with AlGaN/GaN heterostructure

2016 International Conference on Communication and Signal Processing (ICCSP), 2016, p.1218-1221

2016

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Recessed Mg-doped P-type In0.2Ga0.8N cap Gate AlGaN/GaN/AlGaN DH-HEMT for high breakdown and power electronics applications

2016 International Conference on Inventive Computation Technologies (ICICT), 2016, Vol.1, p.1-4

2016

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Thermal and trapping phenomena assessment on AlGaN/GaN microwave power transistor

The 5th European Microwave Integrated Circuits Conference, 2010, p.110-113

2010

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Modeling of interface scattering of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

2011 3rd International Conference on Computer Research and Development, 2011, Vol.3, p.290-292

2011

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Recessed Y-gate AlN/GaN/AlGaN DHFET with GaN cap layer at the gate edge

2012 IEEE International Power Engineering and Optimization Conference Melaka, Malaysia, 2012, p.302-305

2012

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Corrections to "Modeling of the Gate Bias- Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs"

An AlN/Al0.85Ga0.15N high electron mobility transistor

Surface-related drain current dispersion effects in AlGaN-GaN HEMTs

On the modelling of interface roughness scattering in AlGaN/GaN heterostructures

Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure

Theoretical Study of Double-Heterojunction AlGaN/GaN/InGaN/δ-doped HEMTs for Improved Transconductance Linearity

Optimization of / High Electron Mobility Heterostructures for High-Power/Frequency Performances

Performance of the AlGaN HEMT structure with a gate extension

Fabrication of Enhancement-Mode AlGaN/GaN MISHEMTs by Using Fluorinated \hbox\hbox as Gate Dielectrics

Systematic characterization of Cl2 reactive ion etching for improved ohmics in AlGaN/GaN HEMTs

AlGaN/GaN Grating-Gate Plasmonic Crystals towards Tunable Terahertz Filters and Modulators

Large-signal performance of deep submicrometer AlGaN/AlN/GaNHEMTs with a field-modulating plate

Effect of High-Temperature Annealed Al2O3 insulator on GaN MIS-HEMTs performance

AlGaN/GaN MODFETs on semi-insulating SiC with 3W/mm at 20GHz

High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE

Robust Forward Gate Bias TDDB Stability in Enhancement-mode Fully Recessed Gate GaN MIS-FETs with ALD Al2O3Gate Dielectric

Comparison of C-Doped AlN/GaN HEMTs and AlN/GaN/AlGaN Double Heterostructure for mmW Applications

Differential negative resistance effect of output characteristics in deep sub-micrometer wurtzite AlGaN/GaN MODFETs

Full Band Monte Carlo Simulation of Wurtzite AlGaN/GaN MODFETs

DC, RF and noise figure analysis of p+ In0.2Ga0.8N cap gate AlGaN DH-HEMT

Thermal and threshold voltage analysis of GaN MOSFET with AlGaN/GaN heterostructure

Recessed Mg-doped P-type In0.2Ga0.8N cap Gate AlGaN/GaN/AlGaN DH-HEMT for high breakdown and power electronics applications

Thermal and trapping phenomena assessment on AlGaN/GaN microwave power transistor

Modeling of interface scattering of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs

Recessed Y-gate AlN/GaN/AlGaN DHFET with GaN cap layer at the gate edge

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