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InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates

Journal of crystal growth, 2012-04, Vol.344 (1), p.45-50

2012

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MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3 μm in single and stacked layers

Journal of crystal growth, 2005-02, Vol.275 (1), p.e2313-e2319

2005

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AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE

Journal of crystal growth, 2000, Vol.221 (1), p.475-480

2000

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Photoluminescence studies of stacked InAs/InP quantum sticks

Journal of crystal growth, 2005-02, Vol.275 (1), p.e2327-e2331

2005

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In situ measurements of tetrahydrofuran hydrate and ice growth in the presence of copper surface with fringe projection: Growth kinetics and interfacial morphology

Journal of crystal growth, 2022-09, Vol.593, p.126753, Article 126753

2022

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MOVPE studies of zincblende GaN on 3C-SiC/Si(001)

Journal of crystal growth, 2023-06, Vol.611, p.127182, Article 127182

2023

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Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

Journal of crystal growth, 2019-10, Vol.524, p.125167, Article 125167

2019

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Study of the nucleation and growth of InP nanowires on silicon with gold-indium catalyst

Journal of crystal growth, 2017-01, Vol.458, p.96-102

2017

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Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing

Journal of crystal growth, 2018-02, Vol.483, p.190-194

2018

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InP1−xAsx quantum dots in InP nanowires: A route for single photon emitters

Journal of crystal growth, 2013-09, Vol.378, p.519-523

2013

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Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors

Journal of crystal growth, 2018-09, Vol.498, p.35-42

2018

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Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxy

Journal of crystal growth, 2018-10, Vol.500, p.11-14

2018

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Twin InSb/GaAs quantum nano-stripes: Growth optimization and related properties

Journal of crystal growth, 2018-04, Vol.487, p.40-44

2018

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Selective area growth of InAs nanowires from SiO2/Si(1 1 1) templates direct-written by focused helium ion beam technology

Journal of crystal growth, 2018-02, Vol.484, p.56-63

2018

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The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device

Journal of crystal growth, 2017-01, Vol.458, p.110-114

2017

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InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy

Journal of crystal growth, 2016-02, Vol.436, p.1-11

2016

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Low threshold InGaAsN/GaAs lasers beyond 1500 nm

Journal of crystal growth, 2005-05, Vol.278 (1), p.224-228

2005

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Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method

Journal of crystal growth, 2009-03, Vol.311 (7), p.1723-1727

2009

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Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution

Journal of crystal growth, 2008-11, Vol.310 (23), p.4846-4849

2008

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Impact of CBr4, V/III ratio, temperature and AsH3 concentration on MOVPE growth of GaAsSb:C

Journal of crystal growth, 2009-03, Vol.311 (6), p.1508-1514

2009

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MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures

Journal of crystal growth, 2013-09, Vol.378, p.88-91

2013

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Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE

Journal of crystal growth, 2007, Vol.298, p.81-84

2007

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Morphological and structural properties of InP/Gd2O3 nanowires grown by molecular beam epitaxy on silicon substrate

Journal of crystal growth, 2012-05, Vol.347 (1), p.49-52

2012

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Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(0 0 1) substrates

Journal of crystal growth, 2003-05, Vol.252 (1), p.208-212

2003

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Surface morphology induced InAs quantum dot or dash formation on InGaAsP/InP (1 0 0)

Journal of crystal growth, 2007-07, Vol.305 (1), p.63-69

2007

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InAs/InP nanowires grown by catalyst assisted molecular beam epitaxy on silicon substrates

MBE growth optimization and optical spectroscopy of InAs/GaAs quantum dots emitting at 1.3 μm in single and stacked layers

AFM study and optical properties of GaAsN/GaAs epilayers grown by MOVPE

Photoluminescence studies of stacked InAs/InP quantum sticks

In situ measurements of tetrahydrofuran hydrate and ice growth in the presence of copper surface with fringe projection: Growth kinetics and interfacial morphology

MOVPE studies of zincblende GaN on 3C-SiC/Si(001)

Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates

Study of the nucleation and growth of InP nanowires on silicon with gold-indium catalyst

Redshift and blueshift of GaNAs/GaAs multiple quantum wells induced by rapid thermal annealing

InP1−xAsx quantum dots in InP nanowires: A route for single photon emitters

Analysis of screw dislocation mediated dark current in Al0.50Ga0.50N solar-blind metal-semiconductor-metal photodetectors

Hydrogen induced quality improvement of GaNAs layers grown by chemical beam epitaxy

Twin InSb/GaAs quantum nano-stripes: Growth optimization and related properties

Selective area growth of InAs nanowires from SiO2/Si(1 1 1) templates direct-written by focused helium ion beam technology

The striking influence of rapid thermal annealing on InGaAsP grown by MBE: material and photovoltaic device

InAs nanowire growth modes on Si (111) by gas source molecular beam epitaxy

Low threshold InGaAsN/GaAs lasers beyond 1500 nm

Growth and characterization of GaInNAs by molecular beam epitaxy using a nitrogen irradiation method

Type II GaAsxSb1-x/InAs (x<0.35) heterojunction grown by MOVPE near a miscibility gap of the ternary solid solution

Impact of CBr4, V/III ratio, temperature and AsH3 concentration on MOVPE growth of GaAsSb:C

MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructures

Growth and characterization of BGaAs and BInGaAs epilayers on GaAs by MOVPE

Morphological and structural properties of InP/Gd2O3 nanowires grown by molecular beam epitaxy on silicon substrate

Photoreflectance studies of optical transitions in cubic GaN grown on GaAs(0 0 1) substrates

Surface morphology induced InAs quantum dot or dash formation on InGaAsP/InP (1 0 0)

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