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A 0.31-pJ/bit 20-Gb/s DFE With 1 Discrete Tap and 2 IIR Filters Feedback in 40-nm-LP CMOS

IEEE transactions on circuits and systems. II, Express briefs, 2017-11, Vol.64 (11), p.1282-1286

2017

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A 0.7-2-GHz self-calibrated multiphase delay-locked loop

IEEE journal of solid-state circuits, 2006-05, Vol.41 (5), p.1051-1061

2006

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1,2-Ethanedithiol Treatment for AgIn5S8/ZnS Quantum Dot Light-Emitting Diodes with High Brightness

ACS applied materials & interfaces, 2017-03, Vol.9 (9), p.8187-8193

2017

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1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits

IET power electronics, 2022-11, Vol.15 (14), p.1502-1510

2022

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A 1.22 mW 2.4 GHz PLL Using a Single-Ring-Oscillator-Based Integrator With Background Frequency Calibration

IEEE transactions on circuits and systems. I, Regular papers, 2020-07, Vol.67 (7), p.2169-2179

2020

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A 1 Tbit/s Bandwidth 1024 b PLL/DLL-Less eDRAM PHY Using 0.3 V 0.105 mW/Gbps Low-Swing IO for CoWoS Application

IEEE journal of solid-state circuits, 2014-04, Vol.49 (4), p.1063-1074

2014

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1-transistor 1-source/channel/drain-diode (1T1D) One-time-programmable Memory in 14-nm FinFET

IEEE electron device letters, 2023-03, Vol.44 (3), p.1-1

2023

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A 10-BIT 100MS/s pipelined ADC IN 0.18μm CMOS technology

2007 IEEE International SOC Conference, 2007, p.3-6

2007

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A 10 GS/s, 3-Bit ADC with Novel Decoder in SiGe BiCMOS Technology

2018 IEEE 3rd International Conference on Integrated Circuits and Microsystems (ICICM), 2018, p.196-200

2018

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A 10 MW class data center with ultra-dense high-efficiency energy distribution: Design and economic evaluation of superconducting DC busbar networks

Energy (Oxford), 2022-07, Vol.250, p.123820, Article 123820

2022

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A 113.92 similar to 118.08 GHz Injection-Locked Frequency Divider With Triple-Split-Inductor Technique

IEEE microwave and wireless components letters, 2011-08, Vol.21 (8), p.436-438

2011

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A 12%-Efficient Upgraded Metallurgical Grade Silicon–Organic Heterojunction Solar Cell Achieved by a Self-Purifying Process

ACS nano, 2014-11, Vol.8 (11), p.11369-11376

2014

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A 12nm FinFET Technology Featuring 2nd Generation FinFET for Low Power and High Performance Applications

2018 IEEE Symposium on VLSI Technology, 2018, p.215-216

2018

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A 132.6-GHz Phase-Locked Loop in 65 nm Digital CMOS

IEEE transactions on circuits and systems. II, Express briefs, 2011-10, Vol.58 (10), p.617-621

2011

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135-GHz D-Band 60-Gbps PAM-8 Wireless Transmission Employing a Joint DNN Equalizer With BP and CMMA

Journal of lightwave technology, 2020-07, Vol.38 (14), p.3592-3601

2020

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A 15-20GHz delay-locked loop in 90nm CMOS technology

2008 IEEE Asian Solid-State Circuits Conference, 2008, p.213-216

2008

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A 150-MHz graphics rendering processor with 256-Mb embedded DRAM

IEEE journal of solid-state circuits, 2001-11, Vol.36 (11), p.1775-1784

2001

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16kV 4H-SiC Reverse-Conducting IGBT With a Collector-Side Injection-Enhanced Structure for Low Reverse-Conducting Voltage

IEEE electron device letters, 2024-06, Vol.45 (6), p.1064-1067

2024

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A 198.9GHz-to-201.0GHz injection-locked frequency divider in 65nm CMOS

2010 Symposium on VLSI Circuits, 2010, p.49-50

2010

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1D-3D mixed-dimensional MnO2@nanoporous carbon composites derived from Mn-metal organic framework with full-band ultra-strong microwave absorption response

Chemical engineering journal (Lausanne, Switzerland : 1996), 2021-08, Vol.417, p.128087, Article 128087

2021

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2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface

IEEE journal of the Electron Devices Society, 2024, Vol.12, p.51-55

2024

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A 2.4-3.0GHz Process-Tolerant Sub-Sampling PLL With Loop Bandwidth Calibration

IEEE transactions on circuits and systems. II, Express briefs, 2021-03, Vol.68 (3), p.873-877

2021

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A 2.4GHz CMOS Quadrature VCO for 2.4GHz WLAN/Bluetooth Applications

2005 IEEE Asian Solid-State Circuits Conference, 2005, p.493-496

2005

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A 2.5D Approach to 360 Panorama Video Stabilization

2018 25th IEEE International Conference on Image Processing (ICIP), 2018, p.3184-3188

2018

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2.5D Heterogeneously Integrated Microsystem for High-Density Neural Sensing Applications

IEEE transactions on biomedical circuits and systems, 2014-12, Vol.8 (6), p.810-823

2014

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1 – 25 von 13.153

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A 0.31-pJ/bit 20-Gb/s DFE With 1 Discrete Tap and 2 IIR Filters Feedback in 40-nm-LP CMOS

A 0.7-2-GHz self-calibrated multiphase delay-locked loop

1,2-Ethanedithiol Treatment for AgIn5S8/ZnS Quantum Dot Light-Emitting Diodes with High Brightness

1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits

A 1.22 mW 2.4 GHz PLL Using a Single-Ring-Oscillator-Based Integrator With Background Frequency Calibration

A 1 Tbit/s Bandwidth 1024 b PLL/DLL-Less eDRAM PHY Using 0.3 V 0.105 mW/Gbps Low-Swing IO for CoWoS Application

1-transistor 1-source/channel/drain-diode (1T1D) One-time-programmable Memory in 14-nm FinFET

A 10-BIT 100MS/s pipelined ADC IN 0.18μm CMOS technology

A 10 GS/s, 3-Bit ADC with Novel Decoder in SiGe BiCMOS Technology

A 10 MW class data center with ultra-dense high-efficiency energy distribution: Design and economic evaluation of superconducting DC busbar networks

A 113.92 similar to 118.08 GHz Injection-Locked Frequency Divider With Triple-Split-Inductor Technique

A 12%-Efficient Upgraded Metallurgical Grade Silicon–Organic Heterojunction Solar Cell Achieved by a Self-Purifying Process

A 12nm FinFET Technology Featuring 2nd Generation FinFET for Low Power and High Performance Applications

A 132.6-GHz Phase-Locked Loop in 65 nm Digital CMOS

135-GHz D-Band 60-Gbps PAM-8 Wireless Transmission Employing a Joint DNN Equalizer With BP and CMMA

A 15-20GHz delay-locked loop in 90nm CMOS technology

A 150-MHz graphics rendering processor with 256-Mb embedded DRAM

16kV 4H-SiC Reverse-Conducting IGBT With a Collector-Side Injection-Enhanced Structure for Low Reverse-Conducting Voltage

A 198.9GHz-to-201.0GHz injection-locked frequency divider in 65nm CMOS

1D-3D mixed-dimensional MnO2@nanoporous carbon composites derived from Mn-metal organic framework with full-band ultra-strong microwave absorption response

2.1 W/mm Output Power Density at 10 GHz for H-Terminated Diamond MOSFETs With (111)-Oriented Surface

A 2.4-3.0GHz Process-Tolerant Sub-Sampling PLL With Loop Bandwidth Calibration

A 2.4GHz CMOS Quadrature VCO for 2.4GHz WLAN/Bluetooth Applications

A 2.5D Approach to 360 Panorama Video Stabilization

2.5D Heterogeneously Integrated Microsystem for High-Density Neural Sensing Applications

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