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A 0.05%–0.08% THD, 762.9 Hz–10 MHz direct digital frequency synthesizer using a reconfigurable DAC for electrochemical impedance spectroscopy measurements

International journal of circuit theory and applications, 2024-07

2024

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0.1–42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output

Electronics letters, 2003-11, Vol.39 (22), p.1594

2003

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0.1 mu m AlSb/InAs HEMTs with InAs subchannel

Electronics letters, 1998-07, Vol.34 (15), p.1525-1526

1998

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0.15 mu m double modulation doped InAs-inserted-channel MODFETs: Gate recess for optimum RF performances

Electronics letters, 1997-03, Vol.33 (6), p.532-533

1997

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0.15-μm n-n gate CMOS technology with channel selective epitaxy and transient enhanced diffusion suppression

Electronics & communications in Japan. Part 2, Electronics, 1996, Vol.79 (11), p.28-35

1996

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A 0.15-μm CMOS baseband LSI employing sleep mode with clock-offset compensation for M2M wireless sensor networks

IEEJ transactions on electrical and electronic engineering, 2015-09, Vol.10 (5), p.576-584

2015

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0.23 μm gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE

Electronics letters, 1991-08, Vol.27 (16), p.1426

1991

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0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100

Electronics letters, 2014-10, Vol.50 (22), p.1631-1633

2014

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A 0.3–5 GHz, low‐power, area‐efficient, high dynamic range variable gain low‐noise amplifier based on tunable active floating inductor technique

International journal of circuit theory and applications, 2021-10, Vol.49 (10), p.3230-3247

2021

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A 0.3‐V, 2.4‐nW, and 100‐Hz fourth‐order LPF for ECG signal processing

International journal of circuit theory and applications, 2020-11, Vol.48 (11), p.1853-1863

2020

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0.32 μm gate length InP-channel MODFETS with ft above 90 GHz

Electronics letters, 1993-07, Vol.29 (15), p.1375

1993

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0.35 V time-domain-based instrumentation amplifier

Electronics letters, 2014-10, Vol.50 (21), p.1511-1513

2014

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0.36 V PGA combining single-stage OTA and input negative transconductor for low energy RF receivers

Electronics letters, 2018-03, Vol.54 (5), p.319-320

2018

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A 0.37‐in. 5900PPI liquid crystal on silicon CMOS SoC using low voltage high dynamic voltage range novel pixel circuit for augmented reality micro‐displays

Journal of the Society for Information Display, 2021-10, Vol.29 (10), p.785-792

2021

Volltextzugriff (PDF)

A 0.38 V near/sub‐ V T digitally controlled low‐dropout regulator with enhanced power supply noise rejection in 90 nm CMOS process

IET circuits, devices & systems, 2013-01, Vol.7 (1), p.31-41

2013

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0.4–3.0 GHz highly efficient harmonic-tuned power amplifier

Electronics letters, 2015-11, Vol.51 (23), p.1911-1913

2015

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0.4 mW, 0.27 pJ/bit true random number generator using jitter, metastability and current starved topology

IET circuits, devices & systems, 2020-10, Vol.14 (7), p.1001-1011

2020

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0–40 GHz GaAs MESFET 1:2 distributed signal distributor IC

Electronics letters, 1996-08, Vol.32 (18), p.1713

1996

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0.45-V 5.4-nW switched-capacitor bandgap reference with intermittent operation and improved supply immunity

Electronics letters, 2018-10, Vol.54 (20), p.1154-1156

2018

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A 0.45‐V low‐power low‐noise amplifier using a wideband image‐rejection technology

IET microwaves, antennas & propagation, 2023-12, Vol.17 (15), p.1130-1138

2023

Volltextzugriff (PDF)

0.5–4.4 Gbit/s PAM4/NRZ dual-mode transceiver with 0.6 V near-ground NMOS driver for low-power memory interface

Electronics letters, 2018-05, Vol.54 (11), p.684-685

2018

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0.5–50 GHz dielectric characterisation of breast cancer tissues

Electronics letters, 2015-06, Vol.51 (13), p.974-975

2015

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A 0.5-V 5.9-fJ/conversion-step SAR ADC in 0.18-μm CMOS

IEEJ transactions on electrical and electronic engineering, 2016-07, Vol.11 (4), p.467-473

2016

Volltextzugriff (PDF)

0.5 V bulk-driven CMOS fully differential current feedback operational amplifier

IET circuits, devices & systems, 2019-05, Vol.13 (3), p.314-320

2019

Volltextzugriff (PDF)

0.5-V bulk-driven differential amplifier

International journal of circuit theory and applications, 2013-12, Vol.41 (12), p.1213-1225

2013

Volltextzugriff (PDF)

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A 0.05%–0.08% THD, 762.9 Hz–10 MHz direct digital frequency synthesizer using a reconfigurable DAC for electrochemical impedance spectroscopy measurements

0.1–42 GHz InP DHBT distributed amplifiers with 35 dB gain and 15 dBm output

0.1 mu m AlSb/InAs HEMTs with InAs subchannel

0.15 mu m double modulation doped InAs-inserted-channel MODFETs: Gate recess for optimum RF performances

0.15-μm n-n gate CMOS technology with channel selective epitaxy and transient enhanced diffusion suppression

A 0.15-μm CMOS baseband LSI employing sleep mode with clock-offset compensation for M2M wireless sensor networks

0.23 μm gate length MODFETs on InAlAs/InGaAs/InP heterostructure grown by MOVPE

0.25 μm emitter InP/InAlGaAs/GaAsSb double heterojunction bipolar transistor with passivation ledge exhibiting a current gain of over 100

A 0.3–5 GHz, low‐power, area‐efficient, high dynamic range variable gain low‐noise amplifier based on tunable active floating inductor technique

A 0.3‐V, 2.4‐nW, and 100‐Hz fourth‐order LPF for ECG signal processing

0.32 μm gate length InP-channel MODFETS with ft above 90 GHz

0.35 V time-domain-based instrumentation amplifier

0.36 V PGA combining single-stage OTA and input negative transconductor for low energy RF receivers

A 0.37‐in. 5900PPI liquid crystal on silicon CMOS SoC using low voltage high dynamic voltage range novel pixel circuit for augmented reality micro‐displays

A 0.38 V near/sub‐ V T digitally controlled low‐dropout regulator with enhanced power supply noise rejection in 90 nm CMOS process

0.4–3.0 GHz highly efficient harmonic-tuned power amplifier

0.4 mW, 0.27 pJ/bit true random number generator using jitter, metastability and current starved topology

0–40 GHz GaAs MESFET 1:2 distributed signal distributor IC

0.45-V 5.4-nW switched-capacitor bandgap reference with intermittent operation and improved supply immunity

A 0.45‐V low‐power low‐noise amplifier using a wideband image‐rejection technology

0.5–4.4 Gbit/s PAM4/NRZ dual-mode transceiver with 0.6 V near-ground NMOS driver for low-power memory interface

0.5–50 GHz dielectric characterisation of breast cancer tissues

A 0.5-V 5.9-fJ/conversion-step SAR ADC in 0.18-μm CMOS

0.5 V bulk-driven CMOS fully differential current feedback operational amplifier

0.5-V bulk-driven differential amplifier

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