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A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

2019 Symposium on VLSI Technology, 2019, p.T222-T223

2019

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A Comprehensive Study of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Layer Effects on Negative Capacitance FETs for Sub-5 nm Node

2018 IEEE Symposium on VLSI Technology, 2018, p.45-46

2018

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Compartmentalized Cell-Free Expression Systems for Building Synthetic Cells

Cell-Free Production, 2023, Vol.186, p.77-101

2023

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Sub-60 mV/dec ferroelectric HZO MoS2 negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitance

2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.23.5.1-23.5.4

2017

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IEEE_Xplore

Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2

2023 Silicon Nanoelectronics Workshop (SNW), 2023, p.47-48

2023

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IEEE_Xplore

Moment-based analysis of biochemical networks in a heterogeneous population of communicating cells

2019 IEEE 58th Conference on Decision and Control (CDC), 2019, p.939-944

2019

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Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION

2017 Symposium on VLSI Technology, 2017, p.T152-T153

2017

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Directed Growth of Biomimetic Microcompartments

Advanced biosystems, 2019-06, Vol.3 (6), p.e1800314-n/a

2019

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Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation

2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2021, p.1-2

2021

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Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability

2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.15.4.1-15.4.4

2017

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IEEE_Xplore

MyHealthyGut: development of a theory-based self-regulatory app to effectively manage celiac disease

mHealth, 2018, Vol.4, p.19-19

2018

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A facile method to functionalize gold nano-tripods with high suspension stability in an aqueous environmentElectronic supplementary information (ESI) available: Experimental procedures of the templated synthesis of Au nano-tripods, additional SEM images, emulsification measured by light scattering technique and visual inspection, XPS analysis, details of using TP-ES-DMA for statistical analyses, and derivation of the stability ratio of tripod AuNPs. See DOI: 10.1039/c8nr00212f

2018-04

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3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching

2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2023, p.1-2

2023

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IEEE_Xplore

NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFE to Break Great Memory Wall with 10 ns of PGM-pulse, 1010 Cycles of Endurance, and Decade Lifetime at 103 °C

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.359-360

2022

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The First Embedded 14nm FeFinFET NVM: 2T1CFE Array as Electrical Synapses and Activations for High-performance and Low-power Inference Accelerators

2021 Symposium on VLSI Technology, 2021, p.1-2

2021

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Synthesis and antitumor evaluation of 5-(benzo[d][1,3]dioxol-5-ylmethyl)-4-(tert-butyl)-N-arylthiazol-2-aminesThe authors declare no competing interests.Electronic supplementary information (ESI) available: Additional details on the experimental part of the synthesis and biological assays. Selected spectra are included. CCDC 1476358. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c6md00234j

2016-09

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Spontaneous membrane-less multi-compartmentalization aqueous two-phase separation in complex coacervate micro-droplets

Chemical communications (Cambridge, England), 2020-10, Vol.56 (84), p.12717-1272

2020

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Morphotropic Phase Boundary-Enhanced Polarization and High-Temperature Retention in Ferroeletric FET

2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), 2024, p.1-2

2024

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3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

2019 IEEE International Electron Devices Meeting (IEDM), 2019, p.15.3.1-15.3.4

2019

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IEEE_Xplore

Efficient implementation of fingerprint verification for mobile embedded systems using fixed-point arithmetic

Proceedings of the 2004 ACM symposium on Applied computing, 2004, p.821-825

2004

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Characterization of Double HfZrO2 based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

2022 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2022, p.1-2

2022

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Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM

2022 International Electron Devices Meeting (IEDM), 2022, p.36.6.1-36.6.4

2022

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IEEE_Xplore

Research on Evaluation Method of Elevator Safety Index Based on Bayesian Network

Proceedings of the Eighth Asia International Symposium on Mechatronics, 2022, Vol.885, p.566-578

2022

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On the temporal analysis for improved hybrid recommendations

Proceedings IEEE/WIC International Conference on Web Intelligence (WI 2003), 2003, p.214-220

2003

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IEEE_Xplore

ε-collusion-proof mechanism for the aggregation of unverifiable cluster labels

The 3rd International Conference on Data Mining and Intelligent Information Technology Applications, 2011, p.274-279

2011

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IEEE_Xplore

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A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

A Comprehensive Study of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Layer Effects on Negative Capacitance FETs for Sub-5 nm Node

Compartmentalized Cell-Free Expression Systems for Building Synthetic Cells

Sub-60 mV/dec ferroelectric HZO MoS2 negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitance

Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2

Moment-based analysis of biochemical networks in a heterogeneous population of communicating cells

Nano-scaled Ge FinFETs with low temperature ferroelectric HfZrOx on specific interfacial layers exhibiting 65% S.S. reduction and improved ION

Directed Growth of Biomimetic Microcompartments

Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation

Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability

MyHealthyGut: development of a theory-based self-regulatory app to effectively manage celiac disease

3-bits-per-cell 2T32CFE nvTCAM by Angstrom-laminated Ferroelectric Layers with 10¹¹ Cycles of Endurance and 4.92V of Ultra-wide Memory-windows for In-memory-searching

NVDimm-FE: A High-density 3D Architecture of 3-bit/c 2TnCFE to Break Great Memory Wall with 10 ns of PGM-pulse, 1010 Cycles of Endurance, and Decade Lifetime at 103 °C

The First Embedded 14nm FeFinFET NVM: 2T1CFE Array as Electrical Synapses and Activations for High-performance and Low-power Inference Accelerators

Spontaneous membrane-less multi-compartmentalization aqueous two-phase separation in complex coacervate micro-droplets

Morphotropic Phase Boundary-Enhanced Polarization and High-Temperature Retention in Ferroeletric FET

3D Scalable, Wake-up Free, and Highly Reliable FRAM Technology with Stress-Engineered HfZrOx

Efficient implementation of fingerprint verification for mobile embedded systems using fixed-point arithmetic

Characterization of Double HfZrO2 based FeFET toward Low-Voltage Multi-Level Operation for High Density Nonvolatile Memory

Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM

Research on Evaluation Method of Elevator Safety Index Based on Bayesian Network

On the temporal analysis for improved hybrid recommendations

ε-collusion-proof mechanism for the aggregation of unverifiable cluster labels

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