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A facile method to functionalize gold nano-tripods with high suspension stability in an aqueous environment

Nanoscale, 2018-01, Vol.10 (16), p.7352-7356

2018

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AN INTEGRATED INDOOR POSITIONING ALGORITHM FOR SMARTPHONE USING PEDESTRIAN DEAD RECKONING WITH MAGNETIC FINGERPRINT AIDED

International archives of the photogrammetry, remote sensing and spatial information sciences., 2022, Vol.XLIII-B1-2022, p.213-218

2022

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Structural studies of the lamellar to bicontinuous gyroid cubic (Q(G)(II)) phase transitions under limited hydration conditions

Soft matter, 2015-03, Vol.11 (10), p.1991-1997

2015

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Machine learning enables polymer cloud-point engineering via inverse design

npj computational materials, 2019-07, Vol.5 (1), p.1-6, Article 73

2019

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The effects of pressure and temperature on the energetics and pivotal surface in a monoacylglycerol/water gyroid inverse bicontinuous cubic phase

Soft matter, 2014-05, Vol.10 (17), p.3009-3015

2014

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A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

2019 Symposium on VLSI Technology, 2019, p.T222-T223

2019

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A Comprehensive Study of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Layer Effects on Negative Capacitance FETs for Sub-5 nm Node

2018 IEEE Symposium on VLSI Technology, 2018, p.45-46

2018

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Tensile-compressive asymmetry in extruded AZ31B rod and its effect on Profilometry-based Indentation Plastometry (PIP)

Materials science & engineering. A, Structural materials : properties, microstructure and processing, 2022-07, Vol.848, p.143429, Article 143429

2022

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Deformation Mechanisms Rationalisation to Design for Creep Resistance in Polycrystalline Ni-Based Superalloys

Metallurgical and materials transactions. A, Physical metallurgy and materials science, 2023-05, Vol.54 (5), p.1886-1901

2023

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Small-molecule uptake in membrane-free peptide/nucleotide protocells

Soft matter, 2013-07, Vol.9 (31), p.7647-7656

2013

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Deposition-rate dependence of orientation growth and crystallization of Ti thin films prepared by magnetron sputtering

Thin solid films, 2015-01, Vol.574, p.71-77

2015

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Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2

2023 Silicon Nanoelectronics Workshop (SNW), 2023, p.47-48

2023

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Hydrophobic nanoparticles promote lamellar to inverted hexagonal transition in phospholipid mesophases

Soft matter, 2015-01, Vol.11 (45), p.8789-8800

2015

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Morphotropic Phase Boundary-Enhanced Polarization and High-Temperature Retention in Ferroeletric FET

2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA), 2024, p.1-2

2024

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Sub-60 mV/dec ferroelectric HZO MoS2 negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitance

2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.23.5.1-23.5.4

2017

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Profilometry-based indentation plastometry to obtain stress-strain curves from anisotropic superalloy components made by additive manufacturing

Materialia, 2021-03, Vol.15, p.101017, Article 101017

2021

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The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors

Thin solid films, 2006-02, Vol.496 (2), p.306-310

2006

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Moment-based analysis of biochemical networks in a heterogeneous population of communicating cells

2019 IEEE 58th Conference on Decision and Control (CDC), 2019, p.939-944

2019

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New salicidation technology PtSi for strained SiGe device

Microelectronic engineering, 2005-03, Vol.78, p.319-323

2005

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Directed Growth of Biomimetic Microcompartments

Advanced biosystems, 2019-06, Vol.3 (6), p.e1800314-n/a

2019

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Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation

2021 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT), 2021, p.1-2

2021

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Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect

Semiconductor science and technology, 2005-08, Vol.20 (8), p.673-676, Article 673

2005

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Technological requirements for a lateral SiGe HBT technology including theoretical performance predictions relative to vertical SiGe HBTs

IEEE transactions on electron devices, 2002-03, Vol.49 (3), p.449-456

2002

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Analysis of cable-stayed bridges during construction by cantilever methods

Computers & structures, 2004-02, Vol.82 (4), p.329-346

2004

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Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability

2017 IEEE International Electron Devices Meeting (IEDM), 2017, p.15.4.1-15.4.4

2017

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A facile method to functionalize gold nano-tripods with high suspension stability in an aqueous environment

AN INTEGRATED INDOOR POSITIONING ALGORITHM FOR SMARTPHONE USING PEDESTRIAN DEAD RECKONING WITH MAGNETIC FINGERPRINT AIDED

Structural studies of the lamellar to bicontinuous gyroid cubic (Q(G)(II)) phase transitions under limited hydration conditions

Machine learning enables polymer cloud-point engineering via inverse design

The effects of pressure and temperature on the energetics and pivotal surface in a monoacylglycerol/water gyroid inverse bicontinuous cubic phase

A Comprehensive Kinetical Modeling of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Energy Effects on Negative Capacitance FETs

A Comprehensive Study of Polymorphic Phase Distribution of Ferroelectric-Dielectrics and Interfacial Layer Effects on Negative Capacitance FETs for Sub-5 nm Node

Tensile-compressive asymmetry in extruded AZ31B rod and its effect on Profilometry-based Indentation Plastometry (PIP)

Deformation Mechanisms Rationalisation to Design for Creep Resistance in Polycrystalline Ni-Based Superalloys

Small-molecule uptake in membrane-free peptide/nucleotide protocells

Deposition-rate dependence of orientation growth and crystallization of Ti thin films prepared by magnetron sputtering

Ultra-Large Memory Window of 3.8V and 75% Read/Write Speed Improvement through Stressed Alumina and Angstrom-Laminated HfZrO2

Hydrophobic nanoparticles promote lamellar to inverted hexagonal transition in phospholipid mesophases

Morphotropic Phase Boundary-Enhanced Polarization and High-Temperature Retention in Ferroeletric FET

Sub-60 mV/dec ferroelectric HZO MoS2 negative capacitance field-effect transistor with internal metal gate: The role of parasitic capacitance

Profilometry-based indentation plastometry to obtain stress-strain curves from anisotropic superalloy components made by additive manufacturing

The impact of non-uniform channel layer growth on device characteristics in state of the Art Si/SiGe/Si p-metal oxide semiconductor field effect transistors

Moment-based analysis of biochemical networks in a heterogeneous population of communicating cells

New salicidation technology PtSi for strained SiGe device

Directed Growth of Biomimetic Microcompartments

Deep insights into Interface Effects to achieve Low-voltage Operation (<1.2V), Low Process Temperature, and First-Principle Calculation

Halo implant in pseudomorphic SiGe channel p-MOSFET devices to reduce short channel effect

Technological requirements for a lateral SiGe HBT technology including theoretical performance predictions relative to vertical SiGe HBTs

Analysis of cable-stayed bridges during construction by cantilever methods

Ge nanowire FETs with HfZrOx ferroelectric gate stack exhibiting SS of sub-60 mV/dec and biasing effects on ferroelectric reliability

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