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Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma

Applied physics letters, 2005-09, Vol.87 (13)

2005

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Modified atomic layer deposition of RuO2 thin films for capacitor electrodes

Applied physics letters, 2007-07, Vol.91 (5)

2007

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Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate

Japanese Journal of Applied Physics, 2001, Vol.40 (10R), p.5850-5855

2001

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The characteristics of Cu-drift induced dielectric breakdown under alternating polarity bias temperature stress

2009 IEEE International Reliability Physics Symposium, 2009, p.825-827

2009

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Platinum(100) hillock growth in a Pt/Ti electrode stack for ferroelectric random access memory

Applied physics letters, 2003-09, Vol.83 (11), p.2160-2162

2003

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ELECTRICAL PROPERTIES OF Bi4-xLaxTi3O12 FERROELECTRIC THIN FILMS PREPARED BY METALORGANIC DECOMPOSITION METHOD

Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 2A, pp. 727-730. 2002, 2002, Vol.41 (2A), p.727-730

2002

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Evaluation of (Bi,La)4Ti3O12 Thin Film Capacitor Fabricated on a Sub-micron Bottom Electrode in a FeRAM Device

Journal of the Korean Physical Society, 2011-01, Vol.58 (1), p.132-137

2011

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Filling of 60-nm Trench Pattern by Copper Electrodeposition on Copper Seed Layer Formed by Using a Self-Assembled Monolayer Process

Journal of the Korean Physical Society, 2009, 55(5), , pp.1986-1990

2009

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EFFECTS OF CRYSTALLIZATION ANNEALING SEQUENCE FOR SrBi2Ta2O9 (SBT) FILM ON Pt/SBT INTERFACE MORPHOLOGY AND ELECTRICAL PROPERTIES OF FERROELECTRIC CAPACITOR

Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 9B, pp. 5465-5468. 2000, 2000, Vol.39 (9B), p.5465-5468

2000

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Effect of Low-Energy Accelerated Ion Bombardment on the Properties of Metal-Organic Decomposition Derived SrBi2(Ta,Nb)2O9 Thin Films Processed at Low Temperature

Journal of the American Ceramic Society, 2004-04, Vol.87 (4), p.720-723

2004

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Platinum (100) Hillock Growth in Pt/Ti Electrode Stack for SrBi2Ta2O9 Ferroelectric Random Access Memory

Journal of electroceramics, 2004-07, Vol.13 (1-3), p.55-63

2004

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Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum

Japanese Journal of Applied Physics, 2004-05, Vol.43 (5A), p.L624

2004

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OHMIC CONTACT PROPERTIES OF TUNGSTEN PLUG AND FERROELECTRIC PROPERTIES OF (Bi,La)4Ti3O12 THIN FILM IN STACKED CAPACITOR STRUCTURE

Japanese Journal of Applied Physics, Part 1, 2002, Vol.41 (12), p.7327-7331

2002

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STACKED Pt/SrBi2Ta2-xNbxO9/Pt/IrOx/Ir CAPACITOR ON POLY PLUG

Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 1, pp. 66-69. 2002, 2002-01, Vol.41 (1), p.66-69

2002

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EFFECTS OF HIGH-TEMPERATURE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION OF Pb(Zr,Ti)O3 THIN FILMS ON STRUCTURAL STABILITIES OF HYBRID Pt/IrO2 /Ir STACK AND SINGLE-LAYER Ir BOTTOM ELECTRODES

Jpn.J.Appl.Phys ,Part 1. Vol. 43, no. 5A, pp. 2651-2654. 2004, 2004, Vol.43 (5A), p.2651-2654

2004

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EFFECTS OF BOTTOM ELECTRODES (Pt AND IrO2) ON PHYSICAL AND ELECTRICAL PROPERTIES OF Bi4-xLaxTi3O12 (BLT) THIN FILM

Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 9B, pp. 5569-5571. 2001, 2001, Vol.40 (9B), p.5569-5571

2001

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THERMAL STABILITY AND ELECTRICAL PROPERTIES OF SrBi2Ta2-xNbxO9/IrOx CAPACITORS WITH Pt TOP ELECTRODE

Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 9A, pp. 5275-5280. 2001, 2001, Vol.40 (9A), p.5275-5280

2001

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Grain size monitoring of 3D flash memory channel poly-Si using multiwavelength Raman spectroscopy

2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS), 2014, p.1-4

2014

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Effect of Substrate Type on CoSi 2 Formation in Rapid Thermal Annealing

ECS transactions, 2016-05, Vol.72 (4), p.211-218

2016

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Random-Oriented (Bi,La) 4 Ti 3 O 12 Thin Film Deposited by Pulsed-DC Sputtering Method on Ferroelectric Random Access Memory Device

Transactions on electrical and electronic materials, 2011, Vol.12 (6), p.258-261

2011

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Reliability of MIM HAO capacitor for 70nm DRAM

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual, 2005, p.686-687

2005

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Phase and Microstructure of ALD-W Films Deposited Using B[sub 2]H[sub 6] and WF[sub 6] and Their Effects on CVD-W Growth

Journal of the Electrochemical Society, 2008, Vol.155 (2), p.D148

2008

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Process Optimization of CoSi 2 Formation on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing

ECS transactions, 2015-03, Vol.66 (4), p.273-279

2015

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Towards Contact Resistance Minimization through CoSi 2 Formation Process Optimization on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing

ECS journal of solid state science and technology, 2015, Vol.4 (7), p.P220-P225

2015

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In-line Monitoring of Grain Size Distribution of Channel Poly Si used in 3D NAND Flash Memory Devices using Multiwavelength Raman Spectroscopy

MRS advances, 2016-01, Vol.1 (5), p.339-348

2016

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Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma

Modified atomic layer deposition of RuO2 thin films for capacitor electrodes

Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate

The characteristics of Cu-drift induced dielectric breakdown under alternating polarity bias temperature stress

Platinum(100) hillock growth in a Pt/Ti electrode stack for ferroelectric random access memory

ELECTRICAL PROPERTIES OF Bi4-xLaxTi3O12 FERROELECTRIC THIN FILMS PREPARED BY METALORGANIC DECOMPOSITION METHOD

Evaluation of (Bi,La)4Ti3O12 Thin Film Capacitor Fabricated on a Sub-micron Bottom Electrode in a FeRAM Device

Filling of 60-nm Trench Pattern by Copper Electrodeposition on Copper Seed Layer Formed by Using a Self-Assembled Monolayer Process

EFFECTS OF CRYSTALLIZATION ANNEALING SEQUENCE FOR SrBi2Ta2O9 (SBT) FILM ON Pt/SBT INTERFACE MORPHOLOGY AND ELECTRICAL PROPERTIES OF FERROELECTRIC CAPACITOR

Effect of Low-Energy Accelerated Ion Bombardment on the Properties of Metal-Organic Decomposition Derived SrBi2(Ta,Nb)2O9 Thin Films Processed at Low Temperature

Platinum (100) Hillock Growth in Pt/Ti Electrode Stack for SrBi2Ta2O9 Ferroelectric Random Access Memory

Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum

OHMIC CONTACT PROPERTIES OF TUNGSTEN PLUG AND FERROELECTRIC PROPERTIES OF (Bi,La)4Ti3O12 THIN FILM IN STACKED CAPACITOR STRUCTURE

STACKED Pt/SrBi2Ta2-xNbxO9/Pt/IrOx/Ir CAPACITOR ON POLY PLUG

EFFECTS OF HIGH-TEMPERATURE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION OF Pb(Zr,Ti)O3 THIN FILMS ON STRUCTURAL STABILITIES OF HYBRID Pt/IrO2 /Ir STACK AND SINGLE-LAYER Ir BOTTOM ELECTRODES

EFFECTS OF BOTTOM ELECTRODES (Pt AND IrO2) ON PHYSICAL AND ELECTRICAL PROPERTIES OF Bi4-xLaxTi3O12 (BLT) THIN FILM

THERMAL STABILITY AND ELECTRICAL PROPERTIES OF SrBi2Ta2-xNbxO9/IrOx CAPACITORS WITH Pt TOP ELECTRODE

Grain size monitoring of 3D flash memory channel poly-Si using multiwavelength Raman spectroscopy

Effect of Substrate Type on CoSi 2 Formation in Rapid Thermal Annealing

Random-Oriented (Bi,La) 4 Ti 3 O 12 Thin Film Deposited by Pulsed-DC Sputtering Method on Ferroelectric Random Access Memory Device

Reliability of MIM HAO capacitor for 70nm DRAM

Phase and Microstructure of ALD-W Films Deposited Using B[sub 2]H[sub 6] and WF[sub 6] and Their Effects on CVD-W Growth

Process Optimization of CoSi 2 Formation on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing

Towards Contact Resistance Minimization through CoSi 2 Formation Process Optimization on P-Doped Poly-Si by Hot Wall-Based Rapid Thermal Annealing

In-line Monitoring of Grain Size Distribution of Channel Poly Si used in 3D NAND Flash Memory Devices using Multiwavelength Raman Spectroscopy

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