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Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires

Nano letters, 2010-08, Vol.10 (8), p.3204-3208

2010

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The Fragility of Thermoelectric Power Factor in Cross-Plane Superlattices in the Presence of Nonidealities: A Quantum Transport Simulation Approach

Journal of electronic materials, 2016-03, Vol.45 (3), p.1584-1588

2016

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Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices

Physical review. B, Condensed matter and materials physics, 2004-09, Vol.70 (11), p.115319.1-115319.16, Article 115319

2004

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The effect of phonon scattering on the switching response of carbon nanotube field-effect transistors

Nanotechnology, 2007-10, Vol.18 (42), p.424036-424036 (6)

2007

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Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si

Nanotechnology, 2013-05, Vol.24 (20), p.205402-205402

2013

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A semiclassical transport model for quantum cascade lasers based on the Pauli master equation

Journal of computational electronics, 2010-12, Vol.9 (3-4), p.211-217

2010

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Characterization of the hot electron distribution function using six moments

Journal of applied physics, 2002-03, Vol.91 (6), p.3869-3879

2002

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Efficient modeling of source/drain tunneling in ultra-scaled transistors

2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2015, p.202-205

2015

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Separated carrier injection control in carbon nanotube field-effect transistors

Journal of applied physics, 2005-05, Vol.97 (10)

2005

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Simulation of hot-electron oxide tunneling current based on a non-Maxwellian electron energy distribution function

Journal of applied physics, 2002-11, Vol.92 (10), p.6019-6027

2002

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Device modeling in the Wigner picture: Computational aspects

Journal of computational electronics, 2010-12, Vol.9 (3-4), p.218-223

2010

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Nonparabolic macroscopic transport models for device simulation based on bulk Monte Carlo data

Journal of applied physics, 2005-05, Vol.97 (9), p.093710-093710-12

2005

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On open boundary conditions for quantum cascade structures

Optical and quantum electronics, 2009-11, Vol.41 (11-13), p.921-932

2009

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Surface-roughness-scattering in non-planar channels - The role of band anisotropy

2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 2013, p.352-355

2013

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The stationary Monte Carlo method for device simulation. I. Theory

Journal of applied physics, 2003-03, Vol.93 (6), p.3553-3563

2003

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Monte Carlo method for modeling of small signal response including the Pauli exclusion principle

Journal of applied physics, 2003-11, Vol.94 (9), p.5791-5799

2003

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The effect of inelastic phonon scattering on carbon nanotube-based transistor performance

Journal of physics. Conference series, 2008-03, Vol.109 (1), p.012029

2008

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Influence of the distribution function shape and the band structure on impact ionization modeling

Journal of applied physics, 2001-12, Vol.90 (12), p.6165-6171

2001

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Accurate impact ionization model which accounts for hot and cold carrier populations

Applied physics letters, 2002-01, Vol.80 (4), p.613-615

2002

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Semiclassical Approximation of Electron-Phonon Scattering beyond Fermi's Golden Rule

SIAM journal on applied mathematics, 2004-01, Vol.64 (6), p.1933-1953

2004

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Thermoelectric Properties of Scaled Silicon Nanowires Using the sp super(3)d super(5)s-SO Atomistic Tight-Binding Model and Boltzmann Transport

Journal of electronic materials, 2011-05, Vol.40 (5), p.753-753

2011

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A fast and stable Poisson-Schrödinger solver for the analysis of carbon nanotube transistors

Journal of computational electronics, 2006-07, Vol.5 (2-3), p.155-159

2006

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The stationary Monte Carlo method for device simulation. II. Event biasing and variance estimation

Journal of applied physics, 2003-03, Vol.93 (6), p.3564-3571

2003

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On the Interplay Between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires

Journal of electronic materials, 2012-06, Vol.41 (6), p.1305-1311

2012

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The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layers

2005 International Conference On Simulation of Semiconductor Processes and Devices, 2005, p.311-314

2005

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Anomalous Piezoresistance Effect in Ultrastrained Silicon Nanowires

The Fragility of Thermoelectric Power Factor in Cross-Plane Superlattices in the Presence of Nonidealities: A Quantum Transport Simulation Approach

Unified particle approach to Wigner-Boltzmann transport in small semiconductor devices

The effect of phonon scattering on the switching response of carbon nanotube field-effect transistors

Simultaneous increase in electrical conductivity and Seebeck coefficient in highly boron-doped nanocrystalline Si

A semiclassical transport model for quantum cascade lasers based on the Pauli master equation

Characterization of the hot electron distribution function using six moments

Efficient modeling of source/drain tunneling in ultra-scaled transistors

Separated carrier injection control in carbon nanotube field-effect transistors

Simulation of hot-electron oxide tunneling current based on a non-Maxwellian electron energy distribution function

Device modeling in the Wigner picture: Computational aspects

Nonparabolic macroscopic transport models for device simulation based on bulk Monte Carlo data

On open boundary conditions for quantum cascade structures

Surface-roughness-scattering in non-planar channels - The role of band anisotropy

The stationary Monte Carlo method for device simulation. I. Theory

Monte Carlo method for modeling of small signal response including the Pauli exclusion principle

The effect of inelastic phonon scattering on carbon nanotube-based transistor performance

Influence of the distribution function shape and the band structure on impact ionization modeling

Accurate impact ionization model which accounts for hot and cold carrier populations

Semiclassical Approximation of Electron-Phonon Scattering beyond Fermi's Golden Rule

Thermoelectric Properties of Scaled Silicon Nanowires Using the sp super(3)d super(5)s-SO Atomistic Tight-Binding Model and Boltzmann Transport

A fast and stable Poisson-Schrödinger solver for the analysis of carbon nanotube transistors

The stationary Monte Carlo method for device simulation. II. Event biasing and variance estimation

On the Interplay Between Electrical Conductivity and Seebeck Coefficient in Ultra-Narrow Silicon Nanowires

The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layers

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